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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CLL3595
type is an epitaxial planar silicon diode,
manufactured in a hermetically sealed glass
surface mount package, designed for low
leakage, high conductance applications.
MAXIMUM RATINGS: (TA=25°C)
SYMBOL UNITS
Peak Repetitive Reverse Voltage V
RRM
150 V
Peak Working Reverse Voltage V
RWM
125 V
Average Forward Current I
O
150 mA
Forward Steady-State Current I
F
225 mA
Recurrent Peak Forward Current i
f
600 mA
Peak Forward Surge Current (1.0s pulse) I
FSM
500 mA
Peak Forward Surge Current (1.0µs pulse) I
FSM
4.0 A
Power Dissipation P
D
500 mW
Operating and Storage
Junction Temperature TJ,T
stg
-65 to +200 °C
Thermal Resistance Θ
JA
350 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
BV
R
IR=100µA 150 V
I
R
VR=125V 1.0 nA
I
R
VR=125V, TA=125°C 500 nA
I
R
VR=125V, TA=150°C 3.0 µA
I
R
VR=30V, TA=125°C 300 nA
V
F
IF=1.0mA 0.54 0.69 V
V
F
IF=5.0mA 0.62 0.77 V
V
F
IF=10mA 0.65 0.80 V
V
F
IF=50mA 0.75 0.88 V
V
F
IF=100mA 0.79 0.92 V
V
F
IF=200mA 0.83 1.00 V
C
T
VR=0, f=1.0MHz 8.0 pF
t
rr
VR=3.5V, If=10mA, R
L
=1.0kΩ 3.0 µs
CLL3595
SURFACE MOUNT
LOW LEAKAGE SILICON DIODE
SOD-80 CASE
Central
Semiconductor Corp.
TM
R1 ( 25-September 2001)
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Central
Semiconductor Corp.
TM
SOD-80 CASE - MECHANICAL OUTLINE
CLL3595
SURFACE MOUNT
LOW LEAKAGE SILICON DIODE
R1 ( 25-September 2001)
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