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CJD200 NPN
CJD210 PNP
SURFACE MOUNT
COMPLEMENTARY SILICON
POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CJD200, CJD210
types are Complementary Silicon Power Transistors
www.centralsemi.com
manufactured in a surface mount package designed for
high current amplifier applications.
MARKING: FULL PART NUMBER
DPAK TRANSISTOR CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL UNITS
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current IC 5.0 A
Peak Collector Current ICM 10 A
Continuous Base Current IB 1.0 A
Power Dissipation PD 12.5 W
Power Dissipation (TA=25°C) PD 1.4 W
Operating and Storage Junction Temperature TJ, T
Thermal Resistance ΘJC 10 °C/W
Thermal Resistance ΘJA 89.3 °C/W
40 V
CBO
25 V
CEO
8.0 V
EBO
-65 to +150 °C
stg
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
I
V
CBO
I
V
CBO
I
V
EBO
BV
IC=10mA 25 V
CEO
V
CE(SAT)
V
CE(SAT)
V
CE(SAT)
V
BE(SAT)
V
BE(ON)
hFE V
hFE V
hFE V
fT V
Cob V
Cob V
I
I
I
I
V
=40V 100 nA
CB
=40V, TC=125°C 100 µA
CB
=8.0V 100 nA
EB
=500mA, IB=50mA 0.3 V
C
=2.0A, IB=200mA 0.75 V
C
=5.0A, IB=1.0A 1.8 V
C
=5.0A, IB=1.0A 2.5 V
C
=1.0V, IC=2.0A 1.6 V
CE
=1.0V, IC=500mA 70
CE
=1.0V, IC=2.0A 45 180
CE
=2.0V, IC=5.0A 10
CE
=10V, IC=100mA, f=10MHz 65 MHz
CE
=10V, IE=0, f=0.1MHz (CJD200) 80 pF
CB
=10V, IE=0, f=0.1MHz (CJD210) 120 pF
CB
R2 (4-January 2010)
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CJD200 NPN
CJD210 PNP
SURFACE MOUNT
COMPLEMENTARY SILICON
POWER TRANSISTORS
DPAK TRANSISTOR CASE - MECHANICAL OUTLINE
www.centralsemi.com
LEAD CODE:
B) BASE
C) COLLECTOR
E) EMITTER
C) COLLECTOR
MARKING:
FULL PART NUMBER
R2 (4-January 2010)
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