The CHV2243 is a monolithic multifunction
for frequency generation. It integrates a
Ku-band oscillator with frequency control
(VCO), a Q-band frequency multiplier and
buffer amplifiers. The VCO is fully
integrated. On chip P-HEMT based
Schottky diode is used as varactor. All the
active devices are internally self biased.
The circuit is manufactured with the PHEMT process : 0.25µm gate length, via
holes through the substrate, air bridges
and electron beam gate lithogr aphy.
It is available in chip form.
Main Features
n Ku-band VCO + Q-band multiplier
n Fully integrated VCO
n Wide f r equency tuning range
n PLL oriented
n Auxiliary output at VCO frequency
n High temperature rang e
n On-chip self biasing
n Automatic assembly oriented
n Chip size 2.41 x 1.18 x 0.1 mm
Maximum variation of Frequency over
temperature (2)
Maximum variation of Frequency tuning
slope over temperature (2)
voltage (2)
voltage (2)
@ 1kHz
@ 10kHz
@ 100kHz
@ 200kHz
@ 1MHz
200300500MHz
-300+300MHz
-26+34%
150450MHz/v
80250MHz /v
-5
-35
-65
-73
-92
+5
-25
-55
-63
-82
dBc/Hz
(1) F_tune2 is the frequency tuning range relative to the specified parameters, this
frequency tuning range has to be inside 38 to 38.5GHz.
(2) Specified within F_tune2
(3) Negative supply voltage must be applied at least 1µs before positive supply
voltage
(4) This output is optional, it can be not connected
Ref. : DSCHV22431074 -15-Mar.-012/6Specifications subject to change without notic e
Auxiliary VCO output at 12.7GHz (F_out / 3) (optional)
Page 5
Q-band VCO
Typical Assembly and Bias Configuration
DC and control lines
-V+V
>= 120pF
V-tune
CHV2243
123456789
1011
12
µ-strip line
13
14
L_out
15
L_aux
µ-stri p line
This drawing shows an example of assembly and bias configuration. All the
transistors are internally self biased. The posit ive and negative voltages can be
respectively connected together (see drawing) according to the recommended
values given in the electrical characteristics table.
For the RF pads the equivalent wire bonding inductance (diameter=25µm) has t o
be according to the following recomm endat ion.
PortEquivalent inductance
(nH)
Approximated wire
length (mm)
RF_out (13)L_out = 0.280.35
VCO_out_aux (15)L_aux = 0.40.5
For a micro-strip configuration a hole in the substrate is recom mended for chip
assembly.
Ref. : DSCHV22431074 -15-Mar.-015/6Specifications subject to change without notic e
Information furnished is believed to be accurate and reliable. However united monolithic semiconductorsS.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of united monolithic semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United monolithic semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from united
monolithic semiconductors S.A.S.
Ref. : DSCHV22431074 -15-Mar.-016/6Specifications subject to change without notic e