Datasheet CHV2242a-99F-00 Datasheet (United Monolithic Semiconductors)

CHV2242a

Q-band VCO based on Ku-band Oscillator

and Q-band Multiplier

GaAs Monolithic Microwave IC

Description

The CHV2242a is a monolithic multif unction for
frequency generation. It integrates a Ku-band
oscillator with frequency control (VCO), a Q­band frequency multiplier and buffer amplifiers.
For performance optimisation, two external
ports (ERC1 and ERC2) allow a passive
resonator coupling to the oscillator ( at one third
of output frequency). On chip Schottky diode,
based on a P-HEMT, is used as varactor. All the
active devices are internally self biased.
The circuit is manufactured with the P-HEMT
process : 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.

Main Features

n Ku-band VCO + Q-band multiplier
n On chip varactor
n External resonator for centre f requency

control and phase noise optimisation

n Low phase noise
n Auxiliary output at VCO frequency
n High temperature rang e
n On-chip self biasing
n Automatic assembly oriented
n Chip size 2.41 x 1.18 x 0.1 mm

+V -V

F_VCO = F_out/3

MEDIUM Q
RESONATOR

ERC1

x3

ERC2

V_tune

Multifunction block diagram

38,7

38,6

38,5

38,4

38,3

Output frequency (GHz)

38,2

38,1

0 0,1 0,2 0,3 0,4 0,5 0,6 0,7 0,8 0,9 1 1,1 1,2

Tuning voltage (V)

Typical tuning characteristic

(coupled to a micro-strip filter

RF_out

(F_out)

Main Characteristics

Tamb = +25°C

Symbol Parameter Min Typ Max Unit

F_out Out put centre frequency 38 38.25 38.5 GHz

F_vco Oscillator frequency F_out/3

F_tune Output frequency tuning r ange 150 200 MHz

Pout Output power 5 7 dBm

ESD Protections : Electrostatic discharge sensitive device observe handling precautions !

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CHV2242a

Q-band VCO

Electrical Characteristics

Full temperature range, used accor ding to section “Typical assembly and bias configurat ion”

Symbol Parameter Min Typ Max Unit

F_out Out put centre frequency 38 38.25 38.5 GHz

F_vco VCO frequency (1) F_out/3

F_tune Frequency tuning range (at F_out ) ( 2) 150 200 MHz

P_out Output power 5 7 dBm

F_slope Frequency tuning slope (2) 500 MHz/V

V_tune Control voltage range 0.2 – 0.8 0 – 1.5 V

Pushing Frequency pushing vs positive supply

voltage

PN Phase noise (given at F_out) (2)

@ 10kHz
@ 100kHz
@ 1MHz

+V Positive supply voltage 4.4 4.5 4.6 V

+I Positive supply current 110 160 mA

-V Negative supply voltage -4.6 -4.5 - 4. 4 V

-I Negative supply current 5 8 mA

Top Operating temperature r ange -40 100 °C

(1) The centre frequency is given by the external passive resonator
(2) This characteristic depends on the resonator Q, the given performance has been

obtained by using a micro-strip filter used as resonator (see section “Proposed Exter nal
Medium Q Resonator”)

60 MHz/v

-48

-75

-100

-43

-70

-95

dBc/Hz

Absolute Maximum Ratings (1)

Symbol Parameter Values Unit

V_tune Tuning voltage 2.5 V

+V Positive supply voltage 5 V

-V Negative supply voltage -5 V
+I Positive supply current 250 mA

-I Negative supply current 15 mA

Tstg Storage temper at ur e r ange -55 to +155 °C

(1) Operation of this device above anyone of these parameters may cause permanent damage.

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Q-band VCO

Chip Mechanical Data and Pin References

CHV2242a

Unit = µm
External chip size = 2410 x 1180 +/- 35
Chip thickness = 100 +/- 10
HF Pads (2, 16,19) = 68 x 118
DC/IF Pads = 100 x 100

Pin number Pin name Description

1,3,5,15,17,18,20

2 ERC1
4 V-tune

5,7,9,10,14

6

8,12 -V

11,13 +V

16 RF_out
19 ERC2
21 AUX

Ground : should not be bonded. If required, please ask
for more information.

External Resonator Coupling Port 1
Tuning voltage input port
NC
GND (optional)
Negative supply voltage
Positive supply voltage
RF output at 38GHz
External Resonator Coupling Port 2
Auxiliary RF output at 12.7GHz (RF_out / 3) (optional)

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CHV2242a

Typical Assembly and Bias Configuration

DC and control lines

V-tune

µ-strip line

L_erc1

-V +V

Q-band VCO

>= 120pF

µ-strip line

L_out

L_erc2

µ-strip line

This drawing shows an example of assembly and bias configuration. All the
transistors are internally self biased. The posit ive and negative voltages can be
respectively connected together (see drawing) according to the recommended
values given in the electrical characteristics table. Due to the high value of

frequency sensitivity versus tuning voltage (around 500MHz/V), the signal
applied to V_tune port must have very low level of noise.

For the RF pads the equivalent wire bonding inductance (diameter=25µm) has t o
be according to the following recomm endat ion.

Port Equivalent inductance

(nH)

Approximated wire

length (mm)

ERC1 (2) L_erc1 = 0.4 0.5

ERC2 (19) L_erc2 = 0.4 0.5

RF_out (16) L_out = 0.28 0.35

For a micro-strip configuration a hole in the substrate is recom mended for chip
assembly.

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Q-band VCO

CHV2242a

Proposed External Medium Q Resonator

This resonator can be used for 77GHz FMCW-based radar applications.
The chip has been especially designed to be coupled to a medium Q resonator

printed on temperature compensated sof t substrate. The resonance is given by
three half wave coupled lines. The length of the coupler (L) gives the centre
frequency and the space between the coupled lines (s) gives t he bandwidth. For
easy connection and phase considerations half wave lines are at the input and
output of the filter. All the recommended dimensions are given in the following
drawing.

The main substrate characteristics ar e the following (ROGERS R03003)

Dielectric

constant

3 250µm 0.0013 13 ppm/°C

The typical resonator length (L) is 7.35mm f or a coupling value (s) of 0.4m m and
for a frequency of 38.25GHz. However this L value should have to be adjusted
depending on the final chip environment.

Other possibility is ARLON/CLTE substrat e. (L is 7.27mm for s=0. 4m m )

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Thickness Dissipation

factor (10GHz)

Thermal

coefficient

CHV2242a

Q-band VCO

Proposed External Medium Q Resonator

The following information is about the S parameter of the resonator (plot for S21 and table
for the four parameters). These values don’t include the wire bonding equivalent
inductance L_erc1 and L_erc2 given in section “Typical Assembly and Bias Configuration”.

S21 of the proposed external resonator

S parameters of the proposed external r esonat or

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Q-band VCO

CHV2242a

External Resonator Coupling Informati on

The external resonator has to be an equivalent band-pass filter with 180°
insertion phase at resonance (oscillation) fr equency. However, this f ilter must be
compatible to the loop parameters of the oscillator (between ERC ports) in order
to obtain the oscillation conditions and to avoid parasitic oscillations. The
following information concerns the S paramet ers of the chip (plots for S21 and
tables for the four parameters), reference ports are ERC1 and ERC2. These
values don’t include the wire bonding equivalent inductance L_erc1 and L_erc2
given in section “Typical Assembly and Bias Configuration” . For more detail and
for a wider band analysis a complete S parameter f ile is available on request.

MMIC S21 for V_tune=0V (between ERC1 and ERC2)

MMIC S21 for V_tune=2V (between ERC1 and ERC2)

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CHV2242a

MMIC S parameters for V_tune=0V (between ERC1 and ERC2)

Q-band VCO

MMIC S parameters for V_tune=2V (between ERC1 and ERC2)

Ordering Information

Chip form : CHV2242a-99F/00

Information furnished is believed to be accurate and reliable. However united monolithic semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of united monolithic semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United monolithic semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from united

monolithic semiconductors S.A.S.

Ref. : DSCHV22421074 -15-Mar.-01 8/8 Specifications subject to change without notic e

Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE

Tel.: [phone] - Fax : [phone]