
Philips Semiconductors Preliminary specification
CATV amplifier module CGD914
CHARACTERISTICS
Bandwidth 45 to 870 MHz; V
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
power gain f = 45MHz 19.75 20 20.25 dB
SL slope straight line f = 45 to 870 MHz 0.2 1 1.5 dB
FL flatness straight line f = 45 to 870 MHz −−±0.45 dB
flatness narrow band in each 6 MHz segment −−±0.1 dB
S
11
S
22
S
21
S
12
input return losses f = 40 to 80 MHz 20 −−dB
output return losses f = 40 to 80 MHz 21 −−dB
phase response f = 50 MHz −45 − +45 deg
reverse isolation RF
CTB composite triple beat 79 chs; f
X
mod
cross modulation 79 chs; fm= 55.25 MHz; note 1 −−−73 dB
=24V; Tmb=35°C; ZS=ZL=75Ω
B
f = 870 MHz 20.2 21 21.5 dB
f = 80 to 160 MHz 19 −−dB
f = 160 to 320 MHz 18 −−dB
f = 320 to 550 MHz 16 −−dB
f = 550 to 650 MHz 15 −−dB
f = 650 to 750 MHz 14 −−dB
f = 750 to 870 MHz 14 −−dB
f = 870 to 914 MHz 10 −−dB
f = 80 to 160 MHz 21 −−dB
f = 160 to 320 MHz 20 −−dB
f = 320 to 550 MHz 19 −−dB
f = 550 to 650 MHz 18 −−dB
f = 650 to 750 MHz 17 −−dB
f = 750 to 870 MHz 16 −−dB
f = 870 to 914 MHz 14 −−dB
to RF
out
112 chs; f
132 chs; f
79 chs flat; V
112 chs flat; V
132 chs flat; V
112 chs; f
132 chs; f
79 chs flat; V
112 chs flat; V
132 chs flat; V
in
= 445.25 MHz; note 1 −−−76 dB
m
= 649.25 MHz; note 2 −−−63 dB
m
= 745.25 MHz; note 3 −−−55 dB
m
=44dBmV; fm= 547.25 MHz −−−73 dB
o
=44dBmV; fm=745.25MHz −−−63 dB
o
=44dBmV; fm=745.25MHz −−−59.5 dB
o
= 55.25 MHz; note 2 −−−64 dB
m
= 55.25 MHz; note 3 −−−58 dB
m
=44dBmV; fm= 55.25 MHz −−−71 dB
o
=44dBmV; fm=55.25MHz −−−67 dB
o
=44dBmV; fm= 55.25 MHz −−−64 dB
o
−−21 dB
1999 Nov 12 3

Philips Semiconductors Preliminary specification
CATV amplifier module CGD914
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
CSO Sum composite second
order distortion (sum)
CSO Diff composite second
order distortion (diff)
NF noise figure f = 50 MHz − 2.5 3.5 dB
I
tot
total current
consumption (DC)
79 chs; f
112 chs; f
132 chs; f
79 chs flat; V
112 chs flat; V
132 chs flat; V
79 chs; f
112 chs; f
132 chs; f
79 chs flat; V
112 chs flat; V
132 chs flat; V
= 446.5 MHz; note 1 −−−70 dB
m
= 746.5 MHz; note 2 −−−60 dB
m
= 860.5 MHz; note 3 −−−56 dB
m
=44dBmV; fm= 548.5 MHz −−−61 dB
o
=44dBmV; fm=746.5MHz −−−52 dB
o
=44dBmV; fm=860.5MHz −−−50 dB
o
= 150 MHz; note 1 −−−58 dB
m
= 150 MHz; note 2 −−−52 dB
m
= 150 MHz; note 3 −−−48 dB
m
=44dBmV; fm= 150 MHz −−−58 dB
o
=44dBmV; fm=150MHz −−−56 dB
o
=44dBmV; fm=150MHz −−−55 dB
o
f = 550 MHz − 2.5 3.2 dB
f = 750 MHz − 2.6 3.5 dB
f = 870 MHz − 34dB
note 4 345 360 375 mA
Notes
1. Vo = 38 dBmV at 54 MHz; Tilt = 7.3 dB (55 to 547 MHz) extrapolated to 12 dB at 870 MHz.
2. Vo = 38 dBmV at 54 MHz; Tilt = 10.2 dB (55 to 745 MHz) extrapolated to 12 dB at 870 MHz.
3. Vo = 38 dBmV at 54 MHz; Tilt = 12 dB (55 to 865 MHz).
4. The module normally operates at V
= 24 V, but is able to withstand supply transients up to 30 V.
B
1999 Nov 12 4

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1999
Internet: http://www.semiconductors.philips.com
68
Printed in The Netherlands 125008/00/05/pp7 Date of release: 1999 Nov 12 Docume nt order number: 93 97 759 06581