Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
handbook, halfpage
M3D252
CGD914
CATV amplifier module
Product specification
Supersedes data of 2000 Mar 02
2000 Apr 20
Page 2
Philips Semiconductors Product specification
CATV amplifier module CGD914
FEATURES
• Excellent linearity
• Extremely low noise
• Excellent return loss properties
• Rugged construction
• Gold metallization ensures excellent reliability.
PINNING - SOT115J
Pin
1 input
2 and 3 common
5+V
7 and 8 common
DESCRIPTION
B
9 output
APPLICATIONS
• CATV systems operating in the 40 to 870 MHz
frequency range.
handbook, halfpage
2
789
351
DESCRIPTION
Hybrid amplifier module ina SOT115J package operating
with a voltage supply of 24 V (DC), employing both GaAs
Side view
MSA319
and Si dies.
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 45 MHz 19.75 20.25 dB
f = 870 MHz 20.2 21.5 dB
I
tot
total current consumption (DC) VB= 24 V 345 375 mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
B
V
i
supply voltage − 30 V
RF input voltage −−
single tone − 70 dBmV
132 channels flat − 45 dBmV
T
stg
T
mb
storage temperature −40 +100 °C
operating mounting base temperature −20 +100 °C
2000 Apr 20 2
Page 3
Philips Semiconductors Product specification
CATV amplifier module CGD914
CHARACTERISTICS
Bandwidth 45 to 870 MHz; VB= 24 V; Tmb=35°C; ZS=ZL=75Ω.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
SL slope straight line f = 45 to 870 MHz 0.2 1 1.5 dB
FL flatness straight line f = 45 to 100 MHz −0.25 −+0.25 dB
s
11
s
22
s
21
s
12
CTB composite triple beat 79 chs; f
X
mod
power gain f = 45 MHz 19.75 20 20.25 dB
f = 870 MHz 20.2 21 21.5 dB
f = 100 to 800 MHz −0.6 − +0.4 dB
f = 800 to 870 MHz −0.45 − +0.2 dB
flatness narrow band in each 6 MHz segment −−±0.1 dB
input return losses f = 40 to 80 MHz 20 −−dB
f = 80 to 160 MHz 20 −−dB
f = 160 to 320 MHz 18 −−dB
f = 320 to 550 MHz 16 −−dB
f = 550 to 650 MHz 15 −−dB
f = 650 to 750 MHz 14 −−dB
f = 750 to 870 MHz 14 −−dB
f = 870 to 914 MHz 10 −−dB
output return losses f = 40 to 80 MHz 21 −−dB
f = 80 to 160 MHz 21 −−dB
f = 160 to 320 MHz 20 −−dB
f = 320 to 550 MHz 19 −−dB
f = 550 to 650 MHz 18 −−dB
f = 650 to 750 MHz 17 −−dB
f = 750 to 870 MHz 16 −−dB
f = 870 to 914 MHz 14 −−dB
phase response f = 50 MHz −45 − +45 deg
reverse isolation RF
to RF
out
112 chs; f
132 chs; f
in
= 445.25 MHz; note 1 −−−76 dB
m
= 649.25 MHz; note 2 −−−64 dB
m
= 745.25 MHz; note 3 −−−55 dB
m
79 chs flat; V
112 chs flat; V
132 chs flat; V
−−22 dB
= 44 dBmV; fm= 547.25 MHz −−−73 dB
o
= 44 dBmV; fm= 745.25 MHz −−−64 dB
o
= 44 dBmV; fm= 745.25 MHz −−−60 dB
o
cross modulation 79 chs; fm= 55.25 MHz; note 1 −−−70 dB
112 chs; f
132 chs; f
79 chs flat; V
112 chs flat; V
132 chs flat; V
= 55.25 MHz; note 2 −−−62 dB
m
= 55.25 MHz; note 3 −−−57 dB
m
= 44 dBmV; fm= 55.25 MHz −−−69 dB
o
= 44 dBmV; fm= 55.25 MHz −−−65 dB
o
= 44 dBmV; fm= 55.25 MHz −−−63 dB
o
2000 Apr 20 3
Page 4
Philips Semiconductors Product specification
CATV amplifier module CGD914
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
CSO Sum composite second
order distortion (sum)
CSO Diff composite second
order distortion (diff)
NF noise figure f = 50 MHz − 2.5 3 dB
d
2
V
o
I
tot
second order distortion note 4 −−−60 dB
output voltage dim= −60 dB; note 7 69 −−dBmV
total current
consumption (DC)
79 chs; fm= 446.5 MHz; note 1 −−−71 dB
112 chs; f
132 chs; f
79 chs flat; V
112 chs flat; V
132 chs flat; V
79 chs; f
112 chs; f
132 chs; f
79 chs flat; V
112 chs flat; V
132 chs flat; V
= 746.5 MHz; note 2 −−−60 dB
m
= 860.5 MHz; note 3 −−−56 dB
m
= 44 dBmV; fm= 548.5 MHz −−−63 dB
o
= 44 dBmV; fm= 746.5 MHz −−−54 dB
o
= 44 dBmV; fm= 860.5 MHz −−−49 dB
o
= 150 MHz; note 1 −−−59 dB
m
= 150 MHz; note 2 −−−53 dB
m
= 150 MHz; note 3 −−−48 dB
m
= 44 dBmV; fm= 150 MHz −−−60 dB
o
= 44 dBmV; fm= 150 MHz −−−59 dB
o
= 44 dBmV; fm= 150 MHz −−−57 dB
o
f = 550 MHz − 2.5 3 dB
f = 750 MHz − 2.6 3.5 dB
f = 870 MHz − 3 3.5 dB
note 5 −−−54 dB
note 6 −−−50 dB
d
= −60 dB; note 8 66 −−dBmV
im
d
= −60 dB; note 9 63 −−dBmV
im
note 10 345 360 375 mA
Notes
1. Vo= 38 dBmV at 54 MHz; Tilt = 7.3 dB (55 to 547 MHz) extrapolated to 12 dB at 870 MHz.
2. Vo= 38 dBmV at 54 MHz; Tilt = 10.2 dB (55 to 745 MHz) extrapolated to 12 dB at 870 MHz.
3. Vo= 38 dBmV at 54 MHz; Tilt = 12 dB (55 to 865 MHz).
4. fp= 55.25 MHz; Vp= 60 dBmV; fq= 493.25 MHz; Vq= 60 dBmV; measured at fp+fq= 548.5 MHz.
5. fp= 55.25 MHz; Vp= 60 dBmV; fq= 691.25 MHz; Vq= 60 dBmV; measured at fp+fq= 746.5 MHz.
6. fp= 55.25 MHz; Vp= 60 dBmV; fq= 805.25 MHz; Vq= 60 dBmV; measured at fp+fq= 860.5 MHz.
7. Measured according to DIN45004B: fp= 540.25 MHz; Vp=Vo; fq= 547.25 MHz; Vq=Vo−6 dB; fr= 549.25 MHz;
Vr=Vo−6 dB; measured at fp+fq−fr= 538.25 MHz.
8. Measured according to DIN45004B: fp= 740.25 MHz; Vp=Vo; fq= 747.25 MHz; Vq=Vo−6 dB; fr= 749.25 MHz;
Vr=Vo−6 dB; measured at fp+fq−fr= 738.25 MHz.
9. Measured according to DIN45004B: fp= 851.25 MHz; Vp=Vo; fq= 858.25 MHz; Vq=Vo−6 dB; fr= 860.25 MHz;
Vr=Vo−6 dB; measured at fp+fq−fr= 849.25 MHz.
10. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 30 V.
2000 Apr 20 4
Page 5
Philips Semiconductors Product specification
CATV amplifier module CGD914
−60
handbook, halfpage
CTB
(dB)
−70
−80
−90
−100
ZS=ZL=75Ω; VB= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.
200 1000
0
400 600 800
(3) Typ.
(4) Typ. −3 σ.
MCD976
(1)
(2)
(3)
(4)
f (MHz)
Fig.2 Composite triple beat as a function of
frequency under tilted conditions.
52
V
o
(dBmV)
48
44
40
36
−60
handbook, halfpage
X
mod
(dB)
−70
−80
−90
−100
ZS=ZL=75Ω; VB= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.
200 1000
0
400 600 800
(3) Typ.
(4) Typ. −3 σ.
MCD977
(1)
(2)
(3)
(4)
f (MHz)
Fig.3 Crossmodulationasafunctionoffrequency
under tilted conditions.
52
V
o
(dBmV)
48
44
40
36
−50
handbook, halfpage
CSO
(dB)
−60
−70
−80
−90
ZS=ZL=75Ω; VB= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.
200 1000
0
400 600 800
(3) Typ.
(4) Typ. −3 σ.
MCD978
(1)
(2)
(3)
(4)
f (MHz)
Fig.4 Composite second order distortion (sum)
as a function of frequency under tilted
conditions.
52
V
o
(dBmV)
48
44
40
36
−50
handbook, halfpage
CSO
(dB)
−60
−70
−80
−90
−100
ZS=ZL=75Ω; VB= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.
(2)
(3)
(4)
0 1000
200 400
(3) Typ.
(4) Typ. −3 σ.
600 800
MCD979
(1)
f (MHz)
Fig.5 Composite second order distortion (diff) as
a function of frequency under tilted
conditions.
54
V
o
(dBmV)
50
46
42
38
34
2000 Apr 20 5
Page 6
Philips Semiconductors Product specification
CATV amplifier module CGD914
−60
handbook, halfpage
CTB
(dB)
−70
−80
−90
0
200
ZS=ZL=75Ω; VB= 24 V; 79 chs flat (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.
400 600 800
(3) Typ.
(4) Typ. −3 σ.
Fig.6 Composite triple beat as a function of
frequency under flat conditions.
MCD980
(1)
(2)
(3)
(4)
f (MHz)
1000
48
V
o
(dBmV)
44
40
36
−60
handbook, halfpage
X
mod
(dB)
−70
−80
−90
0
200
ZS=ZL=75Ω; VB= 24 V; 79 chs flat (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.
400 600 800
(3) Typ.
(4) Typ. −3 σ.
MCD981
(1)
(2)
(3)
(4)
1000
f (MHz)
Fig.7 Crossmodulationasafunctionoffrequency
under flat conditions.
48
V
o
(dBmV)
44
40
36
−50
handbook, halfpage
CSO
(dB)
−60
−70
−80
−90
ZS=ZL=75Ω; VB= 24 V; 79 chs flat (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.
200 1000
0
400 600 800
(3) Typ.
(4) Typ. −3 σ.
MCD982
(1)
(2)
(3)
(4)
f (MHz)
Fig.8 Compositesecondorderdistortion(sum)as
a function of frequency under flat
conditions.
48
V
o
(dBmV)
44
40
36
32
−50
handbook, halfpage
CSO
(dB)
−60
−70
−80
−90
ZS=ZL=75Ω; VB= 24 V; 79 chs flat (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.
(2)
(3)
(4)
200 1000
0
400 600 800
(3) Typ.
(4) Typ. −3 σ.
MCD983
(1)
f (MHz)
Fig.9 Composite second order distortion (diff) as
a function of frequency under flat
conditions.
48
V
o
(dBmV)
44
40
36
32
2000 Apr 20 6
Page 7
Philips Semiconductors Product specification
CATV amplifier module CGD914
−40
handbook, halfpage
CTB
(dB)
−50
−60
−70
−80
ZS=ZL=75Ω; VB= 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.
200 1000
0
400 600 800
(3) Typ.
(4) Typ. −3 σ.
MCD984
(1)
(2)
(3)
(4)
f (MHz)
Fig.10 Composite triple beat as a function of
frequency under tilted conditions.
52
V
o
(dBmV)
48
44
40
36
−50
handbook, halfpage
X
mod
(dB)
−60
−70
−80
−90
ZS=ZL=75Ω; VB= 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.
200 1000
0
400 600 800
(3) Typ.
(4) Typ. −3 σ.
MCD985
(1)
(2)
(3)
(4)
f (MHz)
Fig.11 Cross modulation as afunctionoffrequency
under tilted conditions.
52
V
o
(dBmV)
48
44
40
36
−50
handbook, halfpage
CSO
(dB)
−60
−70
−80
−90
ZS=ZL=75Ω; VB= 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.
200 1000
0
400 600 800
(3) Typ.
(4) Typ. −3 σ.
(1)
MCD986
(2)
(3)
(4)
f (MHz)
Fig.12 Composite second order distortion (sum) as
a function of frequency under tilted
conditions.
52
V
o
(dBmV)
48
44
40
36
−50
handbook, halfpage
CSO
(dB)
−60
−70
−80
−90
ZS=ZL=75Ω; VB= 24 V; 112 chs; tilt = 10.2 dB (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.
200 1000
0
400 600 800
(3) Typ.
(4) Typ. −3 σ.
MCD987
(1)
(2)
(3)
(4)
f (MHz)
Fig.13 Composite second order distortion (diff) as
a function of frequency under tilted
conditions.
52
V
o
(dBmV)
48
44
40
36
2000 Apr 20 7
Page 8
Philips Semiconductors Product specification
CATV amplifier module CGD914
−50
handbook, halfpage
CTB
(dB)
−60
−70
−80
−90
ZS=ZL=75Ω; VB= 24 V; 112 chs flat (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.
200 1000
0
400 600 800
(3) Typ.
(4) Typ. −3 σ.
Fig.14 Composite triple beat as a function of
frequency under flat conditions.
MCD988
(1)
(2)
(3)
(4)
f (MHz)
48
V
o
(dBmV)
44
40
36
32
−60
handbook, halfpage
X
mod
(dB)
−70
−80
−90
−100
ZS=ZL=75Ω; VB= 24 V; 112 chs flat (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.
200 1000
0
400 600 800
(3) Typ.
(4) Typ. −3 σ.
MCD989
(1)
(2)
(3)
(4)
f (MHz)
Fig.15 Cross modulation as afunctionoffrequency
under flat conditions.
48
V
o
(dBmV)
44
40
36
32
−50
handbook, halfpage
CSO
(dB)
−60
−70
−80
−90
ZS=ZL=75Ω; VB= 24 V; 112 chs flat (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.
200 1000
0
400 600 800
(3) Typ.
(4) Typ. −3 σ.
MCD990
(2)
(3)
(4)
(1)
f (MHz)
Fig.16 Composite second order distortion (sum) as
a function of frequency under flat
conditions.
48
V
o
(dBmV)
44
40
36
32
−50
handbook, halfpage
CSO
(dB)
−60
−70
−80
−90
ZS=ZL=75Ω; VB= 24 V; 112 chs; flat (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.
(2)
(3)
(4)
200 1000
0
400 600 800
(3) Typ.
(4) Typ. −3 σ.
MCD991
(1)
f (MHz)
Fig.17 Composite second order distortion (diff) as
a function of frequency under flat
conditions.
48
V
o
(dBmV)
44
40
36
32
2000 Apr 20 8
Page 9
Philips Semiconductors Product specification
CATV amplifier module CGD914
−40
handbook, halfpage
CTB
(dB)
−50
−60
−70
−80
ZS=ZL=75Ω; VB= 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz).
(1) Vo.
(2) Typ. +3 σ.
200 1000
0
400 600 800
(3) Typ.
(4) Typ. −3 σ.
MCD992
(1)
(2)
(3)
(4)
f (MHz)
Fig.18 Composite triple beat as a function of
frequency under tilted conditions.
52
V
o
(dBmV)
48
44
40
36
−50
handbook, halfpage
X
mod
(dB)
−60
−70
−80
−90
ZS=ZL=75Ω; VB= 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz).
(1) Vo.
(2) Typ. +3 σ.
200 1000
0
400 600 800
(3) Typ.
(4) Typ. −3 σ.
MCD993
(1)
(2)
(3)
(4)
f (MHz)
Fig.19 Cross modulation as afunctionoffrequency
under tilted conditions.
52
V
o
(dBmV)
48
44
40
36
−40
handbook, halfpage
CSO
(dB)
−50
−60
−70
−80
ZS=ZL=75Ω; VB= 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz).
(1) Vo.
(2) Typ. +3 σ.
200 1000
0
400 600 800
(3) Typ.
(4) Typ. −3 σ.
MCD994
(1)
(2)
(3)
(4)
f (MHz)
Fig.20 Composite second order distortion (sum) as
a function of frequency under tilted
conditions.
52
V
o
(dBmV)
48
44
40
36
−40
handbook, halfpage
CSO
(dB)
−50
−60
−70
−80
−90
ZS=ZL=75Ω; VB= 24 V; 132 chs; tilt = 12 dB (50 to 870 MHz).
(1) Vo.
(2) Typ. +3 σ.
(2)
(3)
(4)
0 1000
200 400
(3) Typ.
(4) Typ. −3 σ.
600 800
MCD995
(1)
f (MHz)
Fig.21 Composite second order distortion (diff) as
a function of frequency under tilted
conditions.
52
V
o
(dBmV)
48
44
40
36
32
2000 Apr 20 9
Page 10
Philips Semiconductors Product specification
CATV amplifier module CGD914
−40
handbook, halfpage
CTB
(dB)
−50
−60
−70
−80
ZS=ZL=75Ω; VB= 24 V; 132 chs flat (50 to 870 MHz).
(1) Vo.
(2) Typ. +3 σ.
200 1000
0
400 600 800
(3) Typ.
(4) Typ. −3 σ.
Fig.22 Composite triple beat as a function of
frequency under flat conditions.
MCD996
(1)
(2)
(3)
(4)
f (MHz)
48
V
o
(dBmV)
44
40
36
32
−60
handbook, halfpage
X
mod
(dB)
−70
−80
−90
−100
ZS=ZL=75Ω; VB= 24 V; 132 chs flat (50 to 870 MHz).
(1) Vo.
(2) Typ. +3 σ.
200 1000
0
400 600 800
(3) Typ.
(4) Typ. −3 σ.
MCD997
(1)
(2)
(3)
(4)
f (MHz)
Fig.23 Cross modulation as afunctionoffrequency
under flat conditions.
48
V
o
(dBmV)
44
40
36
32
−50
handbook, halfpage
CSO
(dB)
−60
−70
−80
−90
ZS=ZL=75Ω; VB= 24 V; 132 chs flat (50 to 870 MHz).
(1) Vo.
(2) Typ. +3 σ.
200 1000
0
400 600 800
(3) Typ.
(4) Typ. −3 σ.
MCD998
(2)
(3)
(4)
(1)
f (MHz)
Fig.24 Composite second order distortion (sum) as
a function of frequency under flat
conditions.
48
V
o
(dBmV)
44
40
36
32
−40
handbook, halfpage
CSO
(dB)
−50
(2)
−60
(3)
(4)
−70
−80
ZS=ZL=75Ω; VB= 24 V; 132 chs flat (50 to 870 MHz).
(1) Vo.
(2) Typ. +3 σ.
200 1000
0
400 600 800
(3) Typ.
(4) Typ. −3 σ.
MCD999
(1)
f (MHz)
Fig.25 Composite second order distortion (diff) as
a function of frequency under flat
conditions.
48
V
o
(dBmV)
44
40
36
32
2000 Apr 20 10
Page 11
Philips Semiconductors Product specification
CATV amplifier module CGD914
PACKAGE OUTLINE
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J
D
E
A
2
A
L
F
S
Z p
1
5
78923
c
d
U
Q
B
U
1
2
y M
p
q
B
0 5 10 mm
W
scale
e
e
1
b
q
2
q
1
y M
B
w
y M
M
B
DIMENSIONS (mm are the original dimensions)
A
UNIT
max.
max.
mm 20.8 9.1
OUTLINE
VERSION
SOT115J
A
2
c
bF
0.51
0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8
0.38
IEC JEDEC EIAJ
D
max.
d
max.
E
max.
ee
1
REFERENCES
L
min.
2000 Apr 20 11
Q
p
4.15
3.85
q
q1q
max.
2.4 38.1 25.4 10.2 4.2 44.75 8 0.25 0.1 3.8
2
U
1
S
max.
EUROPEAN
PROJECTION
W
U
2
6-32
UNC
yw
ISSUE DATE
99-02-06
Z
max.
Page 12
Philips Semiconductors Product specification
CATV amplifier module CGD914
DATA SHEET STATUS
DATA SHEET STATUS
Objective specification Development This data sheet contains the design target or goal specifications for
Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be
Product specification Production This data sheet contains final specifications. Philips Semiconductors
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseorat any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.
PRODUCT
STATUS
DEFINITIONS
product development. Specification may change in any manner without
notice.
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury.Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseofanyoftheseproducts,conveysnolicenceortitle
under any patent, copyright, or mask work right to these
products,andmakes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
(1)
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
2000 Apr 20 12
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Philips Semiconductors Product specification
CATV amplifier module CGD914
NOTES
2000 Apr 20 13
Page 14
Philips Semiconductors Product specification
CATV amplifier module CGD914
NOTES
2000 Apr 20 14
Page 15
Philips Semiconductors Product specification
CATV amplifier module CGD914
NOTES
2000 Apr 20 15
Page 16
Philips Semiconductors – a w orldwide compan y
Argentina: see South America
Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140,
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 68 9211, Fax. +359 2 68 9102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,
Tel. +45 33 29 3333, Fax. +45 33 29 3905
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615 800, Fax. +358 9 6158 0920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 4099 6161, Fax. +33 1 4099 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 2353 60, Fax. +49 40 2353 6300
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PTPhilips DevelopmentCorporation,Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS,ViaCasati,23 - 20052 MONZA (MI),
Tel. +39 039 203 6838, Fax +39 039 203 6800
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW,
Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 58088 Newville 2114,
Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2886, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 3341 299, Fax.+381 11 3342 553
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
2000
Internet: http://www.semiconductors.philips.com
69
Printed in The Netherlands 603510/04/pp16 Date of release: 2000 Apr 20 Document order number: 9397 750 06965
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