Datasheet CGA-6618 Datasheet (STANF)

Page 1
Preliminary
Preliminary
Product Description
CGA-6618
Stanford Microdevices CGA-6618 is a high performance GaAs HBT MMIC Amplifier. Designed with the InGaP process technology for excellent reliability. A Darlington configuration is utilized for broadband performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. The amplifier contains two amplifiers for use in wideband Push-Pull CATV amplifiers requiring excellent second order performance. The second and third order non-linearities are greatly improved in the push pull configuration.
Amplifier Configuration
1 2 3 4
8 7 6 5
Key 75 Ohm Parameters at Room Temperature 50-860MHz CATV Band Data
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S
l
D
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3PItuptuO
Bd1PtuptuO
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OSCVmBd43+,talF,.hC97dnaBrevOesaCtsroW cBd18
BTCVmBd43+,talF,.hC97dnaBrevOesaCtsroW cBd07
DOMXVmBd43+,talF,.hC97dnaBrevOesaCtsroW cBd56
dV V7.4
zHM1=gnicapsenoT
mBd6+=enoT/tuoP
zHM1=gnicapsenoT
mBd6+=enoT/tuoP
secived3foegarevA
Note: Measured in Push-Pull Application test board
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved.
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Dual CATV Broadband High Linearity GaAs HBT Amplifier
Product Features
Excellent CSO/CTB/XMOD Performance at +34 dBmV Output Power per Tone
Dual Devices in each SOIC-8 Package simplify
Push-Pull configuration PC board layout
Operates from a single supplyDropping Resistor provides
Temperature Compensation
Applications
CATV Head End Driver and Predriver AmplifierCATV Line Driver Amplifier
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zHM05
zHM005 zHM068
zHM05
zHM005 zHM068
zHM05
zHM005 zHM068
zHM05
zHM005 zHM068
zHM05
zHM005 zHM068
zHM05
zHM005 zHM068
zHM05
zHM005 zHM068
Bd
mBd
mBd
mBd
Bd
Bd
Bd
0.41
1.41
0.41
27 28 47
83 04 04
5.12
5.12
0.12
5.21
0.71
5.31
0.01
0.91
5.31
9.3
1.4
4.4
EDS-101994 Rev B
Page 2
Preliminary
CGA-6618 Dual GaAs HBT Amplifier
Typical S-Parameters @ VS=8V, ID=160mA, R
Gain vs. Frequency
15
13
11
9
S21 (dB)
7
5
0 200 400 600 800 1000
Frequency (MHz)
-5
-10
-15
S22 (dB)
-20
-25 0 200 400 600 800 1000
Output Return Loss vs. Frequency
-40C 25C 85C
Frequency (MHz)
=39 Ohms, TL=+25°C
BIAS
-40C 25C 85C
Input Return Loss vs. Frequency
-5
-10
-15
S11 (dB)
-20
-25 0 200 400 600 800 1000
-40C 25C 85C
Frequency (MHz)
Absolute Maximum Ratings
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Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TL)/Rth,j-l
2
EDS-101994 Rev B
Page 3
Preliminary
CGA-6618 Dual GaAs HBT Amplifier
Typical RF Performance @ VS=8V, ID=160mA, R
50 45 40 35 30
IP3 (dBm)
25 20
0 0.2 0.4 0.6 0.8 1
100
90 80 70 60 50
IM2 (dBc)
40 30 20
03691215
IP3 vs. Temperature
-40C 25C 85C
Frequency (MHz)
Second Harmonic vs. Pout and Freq.
Data shown is typical at 25C
66MHz 100MHz 250MHz 500MHz
Pout (dBm)
=39 Ohms, TL=+25°C
BIAS
90
IP2 vs. Temperature
85 80 75 70
IP2 (dBm)
65 60
0 0 .2 0.4 0.6 0.8 1
Frequency (MHz)
Third Harmonic vs. Pout and Freq.
Data shown is typical at 25C
100
90 80 70 60 50
IM3 (dBc)
40 30
66MHz 100MHz 250MHz 500MHz
20
0 3 6 9 12 15
Pout (dBm)
-40 C 25C 85C
Push-Pull CGA-6618 Noise Figure
6 5 4 3
NF (dB)
2 1 0
50MHz-900MHz, Typical
110 100
90 80 70
dBc
60 50 40
0 200 400 600 800 1000
Frequency (MHz)
3
Push-Pull CGA-6618 CTB/CSO/XMOD
34 dBmV/Ch., 79 Ch.,Flat
CTB CSO­CSO+ Xmod
0 100 200 300 400 500 600
Frequency (MHz)
EDS-101994 Rev B
Page 4
CGA-6618 Dual GaAs HBT Amplifier
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1
3,2
4
5
7,6
8
DAPE
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2
3
4
Basic Application Schematic 50-860 MHz
Evalution Board Layout 50-860 MHz
Rbias
1uF Tant.
RF INPUT
Balun ETC1-1-13
1000pF
1000pF
1uF Tant .
Rbias
Recommended Land Pattern
.15 [3.81]
0.01µF 1000pF 68pF
1µF Tant.
Macom
1000 pF
ETC1-1-13
1000 pF
1µF Tant. 0.01µF 1000pF 68pF
1
4
Amp 1
Amp 2
CGA-6618
SOIC-08
Vs
RBIAS
220 nH
8
1000 pF
6,72,3
Macom
1000 pF
5
ETC1-1-13
220 nH
RBIAS
Vs
220nH
220nH
.01uF 1000pF 68pF
Balun ETC1-1-13
1000pF
1000pF
68pF 1000pF .01uF
ECB-101611 Rev A ESOP-8 Push-Pull Eval Board
Preliminary
8
7
6
5
RF OUTPUT
IrofseulaVrotsiseRsaiBdednemmoceR
Am061=
D
V(egatloVylppuS
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S
R
SAIB
R
SAIB
936519031
gnitaRrewoPW2/1W2/1W1W1
2(VS-VD)
R
=
BIAS
I
D
.24 [6.22]
.05 [1.27]
4
.02 [.60]
.16 [4.02]
.33 [8.42]
.11 [2.71]
EDS-101994 Rev B
Page 5
CGA-6618 Dual GaAs HBT Amplifier
Package Outline Drawing
Preliminary
.050
[1.27]
TOP VIEW
678
Date Code
CGA 6618
1
SIDE VIEW
32
.035 [.889]
.045 [1.143]
.194
[4.928]
5
.155 [3.937]
4
.016 [.406]
.
.003
[.076]
PARTING LINE
0
6
.061
[1.549]
1
1
[
.
.236 [5.994]
4
9
]
5
0
0
.
8
.
[
2
E
S
A
BOTTOM VIEW
.078 [1.969]
EXPOSED PAD
.194 [4.93]
.013 [.33] x
]
4
7
3
[
1
.
.
0
5
8
0
3
]
T
I
N
G
L
P
A
N
E
E
S
E
D
T
E
A
45°
.
0
0
8
.155
[3.937]
I
L
A
E
N
D
I
V
W
E
DETAIL A
.025
Part Number Ordering Information
Caution: ESD sensitive
Appropriate precautions in handling, packaging and testing devices must be observed.
Note: Parts need to be baked prior to use as discussed in application note EAN-101472 (Special handling information for Exposed Pad
TM
SOIC-8 products) to ensure no moisture is trapped in the encapsulated package. In production,
rebmuNtraP leeRrePseciveD eziSleeR
8166-AGC005"7
this baking procedure is not necessary if parts are used within 24 hours of opening the sealed shipping materials.
5
EDS-101994 Rev B
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