Datasheet CGA-3318 Datasheet (STANF)

Page 1
Preliminary
Preliminary
Product Description
CGA-3318
Stanford Microdevices CGA-3318 is a high performance Silicon Germanium HBT MMIC Amplifier. Designed with SiGe process technology for excellent linearity at an exceptional price. A Darlington configuration is utilized for broadband performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. The amplifier contains two amplifiers for use in wideband Push-Pull CATV amplifiers requiring excellent second order performance. The second and third order non-linearities are greatly improved in the push pull configuration.
Amplifier Configuration
1 2 3 4
8 7 6 5
Key 75 Ohm Parameters at Room Temperature 50-860MHz CATV Band Data
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S
l
SAIB
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3PItuptuO
Bd1PtuptuO
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BTCVmBd43+,talF,.hC97dnaBrevOesaCtsroW cBd86
DOMXVmBd43+,talF,.hC97dnaBrevOesaCtsroW cBd36
dV V3.4
zHM1=gnicapsenoT
mBd6+=enoT/tuoP
zHM1=gnicapsenoT
mBd6+=enoT/tuoP
secived3foegarevA
Note: Measured in Push-Pull Application test board
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved.
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SAIB
ZAm051=
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dedulcnIssoLnoitresnInulaB
Dual CATV Broadband High Linearity SiGe HBT Amplifier
Product Features
Excellent CSO/CTB/XMOD Performance at +34 dBmV Output Power per Tone
Dual Devices in each SOIC-8 Package simplify
Push-Pull configuration PC board layout
Operates from a single supplyDropping Resistor provides
Temperature Compensation
Applications
CATV Head End Driver and Predriver AmplifierCATV Line Driver Amplifier
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zHM05
zHM005 zHM068
zHM05
zHM005 zHM068
zHM05
zHM005 zHM068
zHM05
zHM005 zHM068
zHM05
zHM005 zHM068
zHM05
zHM005 zHM068
zHM05
zHM005 zHM068
Bd
mBd
mBd
mBd
Bd
Bd
Bd
5.21
5.21
9.11
07 86 37
5.63
0.83
0.83
0.02
0.12
6.02
51 02 41
01 41 91
2.4
3.4
8.4
EDS-101993 Rev B
Page 2
Preliminary
CGA-3318 Dual SiGe HBT Amplifier
Typical S-Parameters @ V
Output Return Loss vs. Frequency
0 200 400 600 800 1000
S22 (dB)
-5
-8
-11
-14
-17
-20
=8V, ID=150mA, R
S
15
13
11
9
S21 (dB)
7
5
0 200 400 600 800 1000
Frequency (MHz)
-40C 25C 85C
=51 Ohms, TL=+25°C
BIAS
Gain vs. Frequency
Frequency (MHz)
-5
-10
-15
-20
S11 (dB)
-25
-30
-40C 25C 85C
Input Return Loss vs. Frequency
-40C 25C 85C
0 200 400 600 800 1000
Frequency (MHz)
Absolute Maximum Ratings
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Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TL)/Rth,j-l
2
EDS-101993 Rev B
Page 3
Preliminary
CGA-3318 Dual SiGe HBT Amplifier
Typical RF Performance @ VS=8V, ID=150mA, R
50 45 40 35 30
IP3 (dBm)
25 20
0 0.2 0.4 0.6 0.8 1
100
90 80 70 60 50
IM2 (dBc)
40 30 20
0 3 6 9 12 15
IP3 vs. Temperature
-40 C 25C 85C
Frequency (MHz)
Second Harmonic vs. Pout and Freq.
Data shown is typical at 25C
66MHz 100MHz 250MHz 500MHz
Pout (dBm)
=51 Ohms, TL=+25°C
BIAS
80
IP2 vs. Temperature
75 70 65 60
IP2 (dBm)
55
-40C 25C 85C
50
0 0.2 0.4 0 .6 0.8 1
Frequency (MHz)
Third Harmonic vs. Pout and Freq.
Data shown is typical at 25C
100
90 80 70 60 50
IM3 (dBc)
40 30
66MHz 100MHz 250MHz 500MHz
20
03691215
Pout (dBm)
Push-Pull CGA-3318 Noise Figure
6 5 4 3 2
NF (dB)
1 0
50MHz-900MHz, Typical
110 100
90 80 70
dBc
60 50 40
0 200 400 600 800 1000
Frequency (MHz)
3
Push-Pull CGA-3318 CTB/CSO/XMOD
34 dBmV/Ch., 79 Ch.,Flat
CTB CSO­CSO+ Xmod
0 100 200 300 400 500 600
Frequency (MHz)
EDS-101993 Rev B
Page 4
CGA-3318 Dual SiGe HBT Amplifier
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1
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4
5
7,6
8
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2
3
4
Preliminary
8
7
6
5
Basic Application Schematic 50-860 MHz
Vs
0.01µF 1000pF 68pF
1µF Tant.
1
Macom
1000 pF
ETC1-1-13
1000 pF
1µF Tant. 0.01µF 1000pF 68pF
V(egatloVylppuS
)V8V9V21V51
S
R
SAIB
R
SAIB
gnitaRrewoPW8/1W2/1W2/1W1
R
Amp 1
4
Amp 2
CGA-3318
SOIC-08
1526001051
2(VS-VD)
=
BIAS
RBIAS
220 nH
8
1000 pF
6,72,3
Macom
1000 pF
220 nH
RBIAS
Vs
IrofseulaVrotsiseRsaiBdednemmoceR
D
ETC1-1-13
Am051=
5
I
D
Evalution Board Layout 50-860 MHz
Rbias
1uF Tant.
RF INPUT
Balun ETC1-1-13
1000pF
1000pF
Rbias
Recommended Land Pattern
.15 [3.81]
.24 [6.22]
.05 [1.27]
220nH
220nH
1uF Tant .
.02 [.60]
.01uF 1000pF 68pF
Balun ETC1-1-13
1000pF
1000pF
68pF 1000pF .01uF
ECB-101611 Rev A ESOP-8 Push-Pull Eval Board
.16 [4.02]
.11 [2.71]
RF OUTPUT
.33 [8.42]
4
EDS-101993 Rev B
Page 5
CGA-3318 Dual SiGe HBT Amplifier
Package Outline Drawing
Preliminary
.050
[1.27]
TOP VIEW
678
Date Code
CGA 3318
1
SIDE VIEW
32
.035 [.889]
.045 [1.143]
.194
[4.928]
5
.155 [3.937]
4
.016 [.406]
.
.003
[.076]
PARTING LINE
0
6
.061
[1.549]
1
1
[
.
.236 [5.994]
4
9
]
5
0
0
.
8
.
[
2
E
S
A
BOTTOM VIEW
.078 [1.969]
EXPOSED PAD
.194 [4.93]
.013 [.33] x
]
4
7
3
[
1
.
.
0
5
8
0
3
]
T
I
N
G
L
P
A
N
E
E
S
E
D
T
E
A
45°
.
0
0
8
.155
[3.937]
I
L
A
E
N
D
I
V
W
E
DETAIL A
.025
Part Number Ordering Information
Caution: ESD sensitive
Appropriate precautions in handling, packaging and testing devices must be observed.
Note: Parts need to be baked prior to use as discussed in application note EAN-101472 (Special handling information for Exposed Pad
TM
SOIC-8 products) to ensure no moisture is trapped in the encapsulated package. In production,
rebmuNtraP leeRrePseciveD eziSleeR
8133-AGC005"7
this baking procedure is not necessary if parts are used within 24 hours of opening the sealed shipping materials.
5
EDS-101993 Rev B
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