Datasheet cev2306 Datasheet

CEV2306

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

20V, 2A, R

R

High dense cell design for extremely low R

Rugged and reliable.

Lead free product is acquired.

SOT-323 package.

ABSOLUTE MAXIMUM RATINGS T

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed

Maximum Power Dissipation

Operating and Store Temperature Range TJ,Tstg -55 to 175

= 65mΩ @VGS = 4.5V.

DS(ON)

= 85mΩ @VGS = 2.5V.

DS(ON)

Parameter

a

DS(ON)

.

D

SOT-323(SC-70)

= 25 C unless otherwise noted

A

G

Symbol

V

DS

V

GS

I

D

I

DM

P

D

S

G

Limit

0.42

20

±8

PRELIMINARY

D

S

Units

V

V

2

8

A

A

W

C

Thermal Characteristics

Parameter Symbol Limit Units

Thermal Resistance, Junction-to-Ambient

This is preliminary information on a new product in development now .
Details are subject to change without notice .

b

1

C/W360RθJA

Rev 1. 2011.Mar.

http://www.cetsemi.com

CEV2306

Electrical Characteristics T

= 25 C unless otherwise noted

A

Parameter Symbol Min Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

On Characteristics

c

Gate Threshold Voltage

Static Drain-Source
On-Resistance

Dynamic Characteristics

d

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics

d

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V

R

BV

C

C

C

t

d(on)

t

d(off)

Q

Q

DSS

I

DSS

I

GSSF

IGSSR

GS(th)

DS(on)

iss

oss

rss

t

r

t

f

Q

g

gs

gd

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 5 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.


b

c

I

S

V

SD

Test Condition

VGS = 0V, ID = 250µA

VDS = 20V, VGS = 0V

VGS = 8V, VDS = 0V

VGS = -8V, VDS = 0V

VGS = VDS, ID = 250µA

VGS = 4.5V, ID = 2A

VGS = 2.5V, ID = 1.5A

VDS = 10V, VGS = 0V,
f = 1.0 MHz

VDD = 10V, ID= 2A,
VGS = 4.5V, R

GEN

= 6Ω

VDS = 10V, ID = 2A,
VGS = 4.5V

VGS = 0V, IS = 0.35A

Typ Max

20

100

-100

0.45 1

330

90

60

8

7

30

36

5

1

1

0.35

1

µA

nA

nA

6552

mΩ

8560 mΩ

pF

pF

pF

16

14

60

72

6.5

ns

ns

ns

ns

nC

nC

nC

1.2

V

V

A

V

2

CEV2306

5

VGS=4.5,3.5,2.5V

4

3

2

ID, Drain Current (A)

1

0

0.0 1 4 532

V

VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

600

500

400

300

200

C, Capacitance (pF)

100

0

0 2 4 6 8 10

C

iss

C

oss

C

rss

VDS, Drain-to-Source Voltage (V)

GS

=1.5V

5

4

3

2

ID, Drain Current (A)

1

TJ=125 C

0

0.0 1.0 2.0 3.00.5 1.5

VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

2.2
ID=2A

VGS=4.5V

1.9

1.6

1.3

1.0

RDS(ON), Normalized

0.7

RDS(ON), On-Resistance(Ohms)

0.4

-100 -50 0 50 100 150 200

TJ, Junction Temperature( C)

25 C

-55 C

2.5

Figure 3. Capacitance

1.3
VDS=V

GS

ID=250µA

1.2

1.1

1.0

0.9

0.8

VTH, Normalized

0.7

Gate-Source Threshold Voltage

0.6

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variation

with Temperature

Figure 4. On-Resistance Variation

with Temperature

V

=0

V

GS

1

10

0

10

-IS, Source-drain current (A)

-1

10

0.2 0.4 0.6 0.8

1.21.0

VSD, Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

3

5

VDS=10V

ID=2A

4

3

2

1

VGS, Gate to Source Voltage (V)

0

0 1.5 3 4.5 6

Qg, Total Gate Charge (nC)

CEV2306

2

10

R

Limit

DS(ON)

1

10

0

10

-1

10

ID, Drain Current (A)

-2

10

TA=25 C
TJ=175 C

Single Pulse

-1

10

VDS, Drain-Source Voltage (V)

DC

10

100ms

0

10ms

1ms

1

10

2

10

Figure 7. Gate Charge

IN

V

D

V

GS

GEN

R

G

S

Figure 9. Switching Test Circuit

2

1

Duty Cycle = 0.5

0.2

0.1

0.1

0.05

r(t),Normalized Effective

0.02

Transient Thermal Impedance

0.01

-4

10

-3

10

DD

V

R

L

Single Pulse

Figure 8. Maximum Safe

Operating Area

on

t

d(off)

t

r

d(on)

t

OUT

V

OUT

V

IN

V

10%

t

90%

10% 10%

INVERTED

50% 50%

90%

t

off

f

t

90%

PULSE WIDTH

Figure 10. Switching Waveforms

Notes:

P

DM

t

1

t

2

t

thJA

thJA

100

1

t

2

= 360 C/W

(t)

1. Duty Cycle, D =

2. Per Unit Base = R

± TA = PDMZ

3. T

JM

4. Surface Mounted

-2

10

-1

1 10 60010

Square Wave Pulse Duration (sec)

Figure 11. Normalized Thermal Transient Impedance Curve

4