Datasheet ceu830g_ced830g Datasheet

CED830G/CEU830G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

500V, 4.5A, R

Super high dense cell design for extremely low R

High power and current handing capability.

Lead free product is acquired.

TO-251 & TO-252 package.

ABSOLUTE MAXIMUM RATINGS T

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed

Maximum Power Dissipation @ TC = 25 C

Operating and Store Temperature Range TJ,T

= 1.5Ω @VGS = 10V.

DS(ON)

G

CEU SERIES
TO-252(D-PAK)

Parameter

a

- Derate above 25 C

.

DS(ON)

D

G

D

S

S

CED SERIES
TO-251(I-PAK)

= 25 C unless otherwise noted

c

G

Symbol

V

DS

V

GS

I

D

I

DM

P

D

stg

PRELIMINARY

D

S

Limit

Units

500

±30

4.5

18

68

0.54

-55 to 150 C

W/ C

V

V

A

A

W

Thermal Characteristics

Parameter Symbol Limit Units

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Details are subject to change without notice .

C/W

C/W

RθJA

2.2RθJC

50

Rev 2. 2011.JulyThis is preliminary information on a new product in development now .

http://www.cetsemi.com

1

CED830G/CEU830G

Electrical Characteristics T

= 25 C unless otherwise noted

c

Parameter Symbol Min Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

On Characteristics

b

Gate Threshold Voltage

Static Drain-Source

On-Resistance

Forward Transconductance

Dynamic Characteristics

c

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics

c

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V

R

BV

C

C

C

t

d(on)

t

d(off)

Q

Q

DSS

I

DSS

I

GSSF

IGSSR

GS(th)

DS(on)

g

FS

iss

oss

rss

t

r

t

f

Q

g

gs

gd

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

b

Reverse Recovry Time

Reverse Recovry Charge

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by des ign, not subject to production testing .
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .

f

IS

V

SD

Trr

Qrr ID = 5A, di/dt = 100A/us

Test Condition

VGS = 0V, ID = 250µA

VDS = 500V, VGS = 0V

VGS = 30V, VDS = 0V

VGS = -30V, VDS = 0V

VGS = VDS, ID = 250µA

VGS = 10V, ID = 2.5A

VDS = 50V, ID = 4A

VDS = 25V, VGS = 0V,
f = 1.0 MHz

VDD = 250V, ID = 4A,
VGS = 10V, R

GEN

= 14Ω

VDS = 400V, ID = 4A,
VGS = 10V

VGS = 0V, IS = 3.1A

ID = 5A, di/dt = 100A/us

Typ Max

500

2.5 4

7

595

90

20

15

14

30

10

13

2.5

5

1

100

-100

1.51.2

30

28

60

20

17

4.5

1.6

429

1.3

V

µA

nA

nA

V

Ω

S

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

A

V

ns

nC

2

CED830G/CEU830G

12

VGS=10,9,8,7V

10

8

6

4

ID, Drain Current (A)

2

0

0 2 4 8 12

VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

900

750

C

rss

iss

C

oss

600

450

300

C, Capacitance (pF)

150

C

0

0 5 10 15 20 25

VDS, Drain-to-Source Voltage (V)

12

10

V

=6V

GS

V

=4V

GS

106

8

6

4

ID, Drain Current (A)

2

0

TJ=125C

1 2 3 4 65

25 C

-55 C

VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

2.2
ID=2.5A

VGS=10V

1.9

1.6

1.3

1.0

RDS(ON), Normalized

0.7

RDS(ON), On-Resistance(Ohms)

0.4

-100 -50 0 50 100 150 200

TJ, Junction Temperature( C)

Figure 3. Capacitance

1.3
VDS=V

GS

ID=250µA

1.2

1.1

1.0

0.9

0.8

VTH, Normalized

0.7

Gate-Source Threshold Voltage

0.6

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variation

with Temperature

Figure 4. On-Resistance Variation

with Temperature

V

=0

V

GS

0

10

-1

10

IS, Source-drain current (A)

-2

10

0.4 0.6 0.8 1.0

1.41.2

VSD, Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

3

CED830G/CEU830G

10

VDS=400V
ID=4A

8

6

4

2

VGS, Gate to Source Voltage (V)

0

0 3 6 9 15

Qg, Total Gate Charge (nC)

Figure 7. Gate Charge

DD

V

IN

V

R

D

V

GS

GEN

R

G

S

R

Limit

DS(ON)

DC

1ms

10ms

10

100ms

2

3

10

1

10

0

10

ID, Drain Current (A)

TC=25 C
TJ=150 C

Single Pulse

-1

10

0

12

10

1

10

VDS, Drain-Source Voltage (V)

Figure 8. Maximum Safe

Operating Area

on

t

d(off)

t

r

d(on)

V

V

t

OUT

IN

10%

L

OUT

V

t

90%

10% 10%

INVERTED

50% 50%

90%

t

off

f

t

90%

PULSE WIDTH

Figure 9. Switching Test Circuit

0

10

D=0.5

0.2

0.1

-1

10

0.05

r(t),Normalized Effective

Transient Thermal Impedance

0.02

0.01

Single Pulse

-2

10

-5

10

10

Figure 11. Normalized Thermal Transient Impedance Curve

Figure 10. Switching Waveforms

PDM

t1

t2

1. RθJC (t)=r (t) * RθJC

2. RθJC=See Datasheet

3. TJM-TC = P* RθJC (t)

4. Duty Cycle, D=t1/t2

-4

-3

10

-2

10

-1

10

0 10

10

1

Square Wave Pulse Duration (sec)

4