Datasheet ceu6426_ced6426 Datasheet

CED6426/CEU6426

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

60V, 16A , R

R

Super high dense cell design for extremely low R

= 66mΩ @VGS = 10V.

DS(ON)

= 85mΩ @VGS = 4.5V.

DS(ON)

.

High power and current handing capability.

Lead free product is acquired.

TO-251 & TO-252 package.

D

G

S CEU SERIES TO-252(D-PAK)

ABSOLUTE MAXIMUM RATINGS T

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed

Maximum Power Dissipation @ TC = 25 C

a

- Derate above 25 C

G

D

S

CED SERIES TO-251(I-PAK)

= 25 C unless otherwise noted

c

Symbol

V

DS

V

GS

I

D

I

DM

P

D

G

Limit

±20

0.26

Operating and Store Temperature Range TJ,Tstg -55 to 150

60

16

64

32

D

S

Units

V

A

W

W/ C

C

Thermal Characteristics

Parameter Symbol Limit Units

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Details are subject to change without notice .

C/W

RθJA

3.9RθJC

50

Rev 2. 2007.April

http://www.cetsemi.com

1

CED6426/CEU6426

Electrical Characteristics T

= 25 C unless otherwise noted

c

Parameter Symbol Min Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

BV

I

DSS

I

GSSF

IGSSR

DSS

On Characteristics

Gate Threshold Voltage

Static Drain-Source

On-Resistance

Dynamic Characteristics

c

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics

c

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V

GS(th)

R

DS(on)

C

t

d(on)

t

d(off)

Q

g

FS

iss

oss

rss

t

r

t

f

Q

g

gs

gd

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing.

b

I

S

V

SD

Test Condition

VGS = 0V, ID = 250µA

Typ Max

60

VDS = 60V, VGS = 0V

VGS = 20V, VDS = 0V

VGS = -20V, VDS = 0V

VGS = VDS, ID = 250µA

1 3

VGS = 10V, ID = 8A

VGS = 4.5V, ID = 6.4A 65

VDS = 10V, ID = 4.5A

VDS = 25V, VGS = 0V,

680

f = 1.0 MHz

VDD = 30V, ID = 1A, VGS = 10V, R

GEN

= 6Ω

2.9

29.7

2.5

VDS = 30V, ID = 4.5A, VGS = 10V

12.9

1.6

2.5

VGS = 0V, IS = 8A

45

10

80

45

10

1

100

-100

66

85

20

5.8

59.4

5

17.1

16

1.2

V

µA

nA

V

mΩ

S

pF

ns

nC

A

V

6

2

CED6426/CEU6426

25

VGS=10,8,6,5V

20

15

10

5

0

0 1 2 53

VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

1200

1000

C

800

600

400

C, Capacitance (pF) ID, Drain Current (A)

200

C

rss

0

0 5 10 15 20 25

iss

C

oss

VDS, Drain-to-Source Voltage (V)

25

20

V

=4.0V

GS

4

15

10

ID, Drain Current (A)

5

TJ=125 C

0

1.0 2.0 3.0 4.00.0 5.0

25 C

-55 C

VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

2.2 ID=8A

VGS=10V

1.9

1.6

1.3

1.0

RDS(ON), Normalized

0.7

RDS(ON), On-Resistance(Ohms)

0.4

-100 -50 0 50 100 150 200

TJ, Junction Temperature( C)

Figure 3. Capacitance

1.3 VDS=V

GS

ID=250µA

1.2

1.1

1.0

0.9

0.8

VTH, Normalized

0.7

Gate-Source Threshold Voltage

0.6

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variation

with Temperature

Figure 4. On-Resistance Variation

with Temperature

V

=0

V

GS

1

10

0

10

IS, Source-drain current (A)

-1

10

0.4 0.6 0.8 1.0

1.41.2

VSD, Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

3

10

8

6

VDS=30V

ID=4.5A

CED6426/CEU6426

2

10

R

Limit

DS(ON)

1

10

10ms

100ms

DC

1ms

4

2

VGS, Gate to Source Voltage (V)

0

0 3 6 12 15

9

Qg, Total Gate Charge (nC)

Figure 7. Gate Charge

DD

V

IN

V

D

V

GS

GEN

R

G

S

Figure 9. Switching Test Circuit

0

10

ID, Drain Current (A)

-1

10

TC=25 C TJ=175 C

Single Pulse

-1

10

0

10

1

10

2

10

6

VDS, Drain-Source Voltage (V)

Figure 8. Maximum Safe

Operating Area

on

t

d(off)

t

r

t

90%

10% 10%

INVERTED

50% 50%

V

t

d(on)

OUT

IN

10%

R

L

OUT

V

90%

t

off

f

t

90%

PULSE WIDTH

Figure 10. Switching Waveforms

0

10

-1

10

r(t),Normalized Effective

Transient Thermal Impedance

-2

10

-5

10

-4

10

-3

10

-2

10

-1

10

0

10

1

10

Square Wave Pulse Duration (sec)

Figure 11. Normalized Thermal Transient Impedance Curve

4