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ceu4279_ced4279
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Datasheet ceu4279_ced4279 Datasheet

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Page 1
CED4279/CEU4279
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
D1/D2
40V , 14A , R
R
-40V , -9A , R
R
= 32mΩ @VGS = 10V.
DS(ON)
= 46mΩ @VGS = 4.5V.
DS(ON)
= 72mΩ @VGS = 10V.
DS(ON)
= 110mΩ @VGS = 4.5V.
DS(ON)
DS(ON)
G1
.
G2
High power and current handing capability.
D1/D2
S1
Lead free product is acquired.
S1
TO-252-4L package.
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation @ TC = 25 C
e
a
- Derate above 25 C
G1
S2
G2
CEU SERIES TO-252-4L
= 25 C unless otherwise noted
c
Symbol
V
DS
V
GS
e
I
D
I
DM
P
D
N-Channel
40
±20
14
56
10.4
0.08
Operating and Store Temperature Range TJ,Tstg -55 to 150
Thermal Characteristics
Parameter Symbol Limit Units
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RθJA
P-Channel Units
40
±20
-9
-36
12RθJC
50
S2
V
V
A
A
W
W/ C
C
C/W
C/W
Details are subject to change without notice .
Rev 2. 2007.Jan
http://www.cetsemi.com
1
Page 2
CED4279/CEU4279
N-Channel Electrical Characteristics T
Parameter Symbol Min Units
= 25 C unless otherwise noted
A
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
BV
I
DSS
I
GSSF
IGSSR
DSS
VGS = 0V, ID = 250µA
VDS = 40V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics
d
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
d
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
GS(th)
R
DS(on)
g
C
C
C
t
d(on)
t
d(off)
Q
Q
VGS = VDS, ID = 250µA
VGS = 10V, ID = 8A
VGS = 4.5V, ID = 6A
c
FS
iss
oss
rss
t
r
t
f
Q
g
gs
gd
VDS = 5V, ID = 8A
VDS = 20V, VGS = 0V, f = 1.0 MHz
VDD = 20V, ID = 6A, VGS = 10V, R
VDS = 20V, ID = 6A, VGS = 4.5V
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. e.Calculated continuous current based on the maximum allowable junction temperature. Package limitation current=8A.
b
c
I
S
V
SD
VGS = 0V, IS = 1A
GEN
= 3Ω
Typ Max
40
1 3
10
1055
160
100
15
11
18
19
10
3.7
4.2
1
100
-100
3225
4635 mΩ
30
22
36
38
13.3
8
1.2
V
µA
nA
nA
V
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
2
Page 3
CED4279/CEU4279
P-Channel Electrical Characteristics T
Parameter Symbol Min Units
= 25 C unless otherwise noted
A
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
BV
I
DSS
I
GSSF
IGSSR
DSS
VGS = 0V, ID = -250µA
VDS = -40V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics
Forward Transconductance
d
c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
d
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-On Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
GS(th)
R
DS(on)
g
C
C
C
t
d(on)
t
d(off)
Q
Q
VGS = VDS, ID = -250µA
VGS = -10V, ID = -8A
VGS = -4.5V, ID = -6A
c
FS
iss
oss
rss
t
r
t
f
Q
g
gs
gd
VDS = -5V, ID = -8A
VDS = -20V, VGS = 0V, f = 1.0 MHz
VDD = -15V, ID = -1A, VGS = -10V, R
VDS = -20V, ID = -4.5A, VGS = -4.5V
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. e.Calculated continuous current based on the maximum allowable junction temperature. Package limitation current=8A.
b
c
I
S
V
SD
VGS = 0V, IS = -1A
GEN
= 6Ω
Typ Max
-40
-2 -4
10
710
130
80
11
3
32
5
5.8
1.9
2.5
-1
µA
100
-100
nA
nA
7260
mΩ
11090 mΩ
pF
pF
pF
22
64
10
7.7
ns
6
ns
ns
ns
nC
nC
nC
-8
-1.2
V
V
S
A
V
3
Page 4
CED4279/CEU4279
N-CHANNEL
10
8
6
4
ID, Drain Current (A)
2
0
0 1 2 53
1500
1250
1000
750
500
C, Capacitance (pF)
250
C
0
0 5 10 15 20 25
VGS=10,8,6V
V
=3.0V
GS
4
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
C
iss
C
oss
rss
VDS, Drain-to-Source Voltage (V)
50
25 C
40
30
20
ID, Drain Current (A)
10
0
TJ=125 C
2 4 60 8
-55 C
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2 ID=8A
VGS=10V
1.9
1.6
1.3
1.0
RDS(ON), Normalized
0.7
RDS(ON), On-Resistance(Ohms)
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
5
Figure 3. Capacitance
1.3 VDS=V
GS
ID=250µA
1.2
1.1
1.0
0.9
0.8
VTH, Normalized
0.7
Gate-Source Threshold Voltage
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
Figure 4. On-Resistance Variation
with Temperature
V
=0
V
GS
1
10
0
10
IS, Source-drain current (A)
-1
10
0.4 0.6 0.8 1.0
1.41.2
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
4
Page 5
CED4279/CEU4279
P-CHANNEL
25
20
15
10
-ID, Drain Current (A)
5
0
0 0.5 2 2.51.51
900
750
600
450
300
C, Capacitance (pF)
150
0
0 5 10 15 20 25
-VGS=10,8V
-V
=5.0
V
GS
-V
=4.0
GS
-VDS, Drain-to-Source Voltage (V)
Figure 7. Output Characteristics
C
iss
C
oss
C
rss
-VDS, Drain-to-Source Voltage (V)
15
12
9
V
6
-ID, Drain Current (A)
3
TJ=125 C
0
2 4 60 8
25 C
-55 C
-VGS, Gate-to-Source Voltage (V)
Figure 8. Transfer Characteristics
2.2 ID=-8A
VGS=-10V
1.9
1.6
1.3
1.0
RDS(ON), Normalized
0.7
RDS(ON), On-Resistance(Ohms)
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 9. Capacitance
1.3 VDS=V
GS
ID=-250µA
1.2
1.1
1.0
0.9
0.8
VTH, Normalized
0.7
Gate-Source Threshold Voltage
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 11. Gate Threshold Variation
with Temperature
Figure 10. On-Resistance Variation
with Temperature
V
=0
V
GS
1
10
0
10
-IS, Source-drain current (A)
-1
10
0.4 0.6 0.8 1.0
1.41.2
-VSD, Body Diode Forward Voltage (V)
Figure 12. Body Diode Forward Voltage
Variation with Source Current
5
Page 6
CED4279/CEU4279
N-CHANNEL
5
VDS=20V
ID=6A
4
3
2
1
VGS, Gate to Source Voltage (V)
0
0 2 4 8 12
P-CHANNEL
5
VDS=20V
ID=4.5A
4
3
2
1
-VGS, Gate to Source Voltage (V)
0
0 1 2 4 6
6 10
Qg, Total Gate Charge (nC)
Figure 13. Gate Charge
3 5
Qg, Total Gate Charge (nC)
2
10
R
Limit
DS(ON)
100ms
DC
1ms
10ms
1
10
5
2
10
1
10
0
10
-1
10
ID, Drain Current (A)
-2
10
10
TC=25 C TJ=150 C
Single Pulse
-2
10
-1
0
10
VDS, Drain-Source Voltage (V)
Figure 14. Maximum Safe
DS(ON)
TC=25 C TJ=150 C
Limit
10
Operating Area
-1
0
10
10ms
100ms
DC
10
1ms
1
2
10
2
10
R
1
10
0
10
-1
10
-ID, Drain Current (A)
Single Pulse
-2
10
-2
10
-VDS, Drain-Source Voltage (V)
Figure 15. Gate Charge
Figure 16. Maximum Safe
Operating Area
6
Page 7
CED4279/CEU4279
DD
V
on
t
d(off)
t
r
t
90%
10% 10%
INVERTED
50% 50%
V
V
d(on)
t
OUT
IN
10%
R
IN
V
V
GS
GEN
R
G
L
D
OUT
V
S
PULSE WIDTH
90%
t
off
f
t
90%
Figure 17. Switching Test Circuit
0
10
D=0.5
0.2
-1
0.1
10
0.05
r(t),Normalized Effective
Transient Thermal Impedance
0.02
0.01
Single Pulse
-2
10
-2
10
-1
10
Figure 19. Normalized Thermal Transient Impedance Curve
Figure 18. Switching Waveforms
0
10
1
10
Square Wave Pulse Duration (sec)
PDM
t1
t2
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
2
10
3
10
4
10
7
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