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N-Channel Enhancement Mode Field Effect Transistor
FEATURES
CET6426
60V, 5A, R
R
High dense cell design for extremely low R
Rugged and reliable.
Lead free product is acquired.
SOT-223 package.
ABSOLUTE MAXIMUM RATINGS T
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation
Operating and Store Temperature Range TJ,Tstg -55 to 150
= 75mΩ @VGS = 10V.
DS(ON)
= 100mΩ @VGS = 4.5V.
DS(ON)
Parameter
a
DS(ON)
.
D
SOT-223
= 25 C unless otherwise noted
A
D
G
Symbol
V
DS
V
GS
I
D
I
DM
P
D
S
G
Limit
60
±20
5
20
3
D
S
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter Symbol Limit Units
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice .
b
Rev 2. 2010.July.
http://www.cetsemi.com
1
C/W42RθJA
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CET6426
Electrical Characteristics T
= 25 C unless otherwise noted
A
Parameter Symbol Min Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
BV
I
DSS
I
GSSF
IGSSR
DSS
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics
d
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
d
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
GS(th)
R
DS(on)
t
d(on)
t
d(off)
Q
Q
C
iss
C
oss
C
rss
t
r
t
f
Q
g
gs
gd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
b
c
I
S
V
SD
Test Condition
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = 250µA
VGS = 10V, ID = 3A
VGS = 4.5V, ID = 2.4A
VDS = 25V, VGS = 0V,
f = 1.0 MHz
VDD = 30V, ID = 1A,
VGS = 10V, R
GEN
= 6Ω
VDS = 30V, ID = 4.5A,
VGS = 10V
VGS = 0V, IS = 2.5A
Typ Max
60
1 3
530
70
50
9
4
28
3
13
1
4
1
µA
100
-100
nA
nA
7560
mΩ
10070 mΩ
pF
pF
pF
18
56
17
ns
8
ns
ns
6
ns
nC
nC
nC
2.5
1.1
V
V
A
V
2
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CET6426
20
VGS=10,9,8V
15
10
5
ID, Drain Current (A)
0
0 1 2 53 4
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
900
750
600
450
300
C, Capacitance (pF)
150
C
rss
0
0 5 10 15 20 25
C
iss
C
oss
VDS, Drain-to-Source Voltage (V)
8
6
4
25 C
V
=3V
GS
TJ=125 C
2
ID, Drain Current (A)
0
0 2 4 61 3 5
-55 C
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2
ID=3A
VGS=10V
1.9
1.6
1.3
1.0
RDS(ON), Normalized
0.7
RDS(ON), On-Resistance(Ohms)
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 3. Capacitance
1.3
VDS=V
GS
ID=250µA
1.2
1.1
1.0
0.9
0.8
VTH, Normalized
0.7
Gate-Source Threshold Voltage
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
Figure 4. On-Resistance Variation
with Temperature
V
=0
V
GS
1
10
0
10
IS, Source-drain current (A)
-1
10
0.4 0.6 0.8 1.0 1.41.2
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
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10
VDS=30V
ID=4.5A
8
6
4
2
VGS, Gate to Source Voltage (V)
0
0 3 6 12 15
9
Qg, Total Gate Charge (nC)
CET6426
2
10
R
Limit
DS(ON)
1
10
0
10
-1
10
ID, Drain Current (A)
-2
10
TA=25 C
TJ=150 C
Single Pulse
-2
10
-1
10
10
VDS, Drain-Source Voltage (V)
100ms
1s
10s
DC
0
1
10
2
10
Figure 7. Gate Charge
IN
V
D
V
GS
GEN
R
G
S
Figure 9. Switching Test Circuit
0
10
D=0.5
0.2
-1
0.1
10
0.05
0.02
-2
0.01
10
r(t),Normalized Effective
Transient Thermal Impedance
10
-3
-4
10
Single Pulse
-3
10
DD
V
R
L
OUT
V
-2
10
Square Wave Pulse Duration (sec)
Figure 8. Maximum Safe
on
t
r
t
90%
10% 10%
INVERTED
50% 50%
V
V
d(on)
t
OUT
IN
10%
PULSE WIDTH
Figure 10. Switching Waveforms
PDM
-1
10
0
10
Operating Area
t
off
d(off)
t
90%
90%
t1
t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
1
10
f
t
2
10
Figure 11. Normalized Thermal Transient Impedance Curve
4
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