Datasheet ces2336 Datasheet

CES2336

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

60V, 1.8A, R

R

High dense cell design for extremely low R

Rugged and reliable.

Lead free product is acquired.

SOT-23 package.

ABSOLUTE MAXIMUM RATINGS T

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed

Maximum Power Dissipation

Operating and Store Temperature Range TJ,Tstg -55 to 150

= 250mΩ @VGS = 10V.

DS(ON)

= 330mΩ @VGS = 4.5V.

DS(ON)

Parameter

a

DS(ON)

.

D

S

G

SOT-23

= 25 C unless otherwise noted

A

Symbol

V

DS

V

GS

I

D

I

DM

P

D

G

Limit

±20

1.25

60

1.8

7.2

PRELIMINARY

D

S

Units

V

V

A

A

W

C

Thermal Characteristics

Parameter Symbol Limit Units

Thermal Resistance, Junction-to-Ambient

This is preliminary information on a new product in development now .
Details are subject to change without notice .

b

1

C/W100RθJA

Rev 2. 2007.June

http://www.cetsemi.com

CES2336

Electrical Characteristics T

= 25 C unless otherwise noted

A

Parameter Symbol Min Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

On Characteristics

c

Gate Threshold Voltage

Static Drain-Source

On-Resistance

Dynamic Characteristics

d

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics

d

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V

R

BV

C

C

C

t

d(on)

t

d(off)

Q

Q

DSS

I

DSS

I

GSSF

IGSSR

GS(th)

DS(on)

iss

oss

rss

t

r

t

f

Q

g

gs

gd

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.


b

c

I

S

V

SD

Test Condition

VGS = 0V, ID = 250µA

VDS = 60V, VGS = 0V

VGS = 20V, VDS = 0V

VGS = -20V, VDS = 0V

VGS = VDS, ID = 250µA

VGS = 10V, ID = 1.8A

VGS = 4.5V, ID = 1.4A

VDS = 25V, VGS = 0V,
f = 1.0 MHz

VDD = 27.5V, ID = 1.8A,
VGS = 10V, R

GEN

= 3Ω

VDS = 27.5V, ID = 1.8A,
VGS = 4.5V

VGS = 0V, IS = 1.8A

Typ Max

60

1 3

230

45

25

8

2.4

16.7

1.6

2.4

0.8

1.1

1

µA

100

-100

250190

nA

nA

mΩ

330250 mΩ

pF

pF

pF

16

4.8

33.4

3.2

3.2

nC

nC

nC

1.8

1.2

V

V

7

ns

ns

ns

ns

A

V

2

CES2336

10

VGS=10,8,6V

8

6

4

ID, Drain Current (A)

2

0

0 2

4

VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

300

250

200

150

100

C, Capacitance (pF)

50

0

0 5 10 15 20 25

VDS, Drain-to-Source Voltage (V)

5

4

ID, Drain Current (A)

3

2

1

TJ=125 C

0

0 2

V

=4V

GS

V

=3V

GS

6

8

25 C

-55 C

4

6

VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

2.2
ID=1.8A

VGS=10V

C

iss

C

oss

C

rss

1.9

1.6

1.3

1.0

RDS(ON), Normalized

0.7

RDS(ON), On-Resistance(Ohms)

0.4

-100 -50 0 50 100 150 200

TJ, Junction Temperature( C)

Figure 3. Capacitance

1.3
VDS=V

GS

ID=250µA

1.2

1.1

1.0

0.9

0.8

VTH, Normalized

0.7

Gate-Source Threshold Voltage

0.6

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variation

with Temperature

Figure 4. On-Resistance Variation

with Temperature

V

=0

V

GS

1

10

0

10

IS, Source-drain current (A)

-1

10

0.4 0.6 0.8 1.0 1.41.2

VSD, Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

3

5

VDS=27.5V
ID=1.8A

4

3

2

1

VGS, Gate to Source Voltage (V)

0

0 0.5 2 2.51 1.5

Qg, Total Gate Charge (nC)

ID, Drain Current (A)

CES2336

2

10

R

Limit

DS(ON)

1

10

0

10

-1

10

TA=25 C
TJ=150 C

Single Pulse

-2

10

-1

10

VDS, Drain-Source Voltage (V)

0

10

DC

100ms

1s

10ms

10

1ms

1

2

10

7

Figure 7. Gate Charge

IN

V

D

V

GS

GEN

R

G

S

Figure 9. Switching Test Circuit

0

10

D=0.5

0.2

-1

0.1

10

0.05

10

-2

-4

10

0.02

Single Pulse

-3

10

r(t),Normalized Effective

Transient Thermal Impedance

DD

V

R

L

OUT

V

-2

10

Square Wave Pulse Duration (sec)

Figure 8. Maximum Safe

on

t

r

t

90%

10% 10%

INVERTED

50% 50%

V

V

d(on)

t

OUT

IN

10%

PULSE WIDTH

Figure 10. Switching Waveforms

PDM

-1

10

0

10

Operating Area

t

off

d(off)

t

90%

90%

t1

t2

1. RθJA (t)=r (t) * RθJA

2. RθJA=See Datasheet

3. TJM-TA = P* RθJA (t)

4. Duty Cycle, D=t1/t2

1

10

f

t

2

10

Figure 11. Normalized Thermal Transient Impedance Curve

4