Datasheet ces2316 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

CES2316

30V, 4.8A, R

R

High dense cell design for extremely low R

Lead free product is acquired.

Rugged and reliable. SOT-23 package.

ABSOLUTE MAXIMUM RATINGS T

Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed

Maximum Power Dissipation

Operating and Store Temperature Range TJ,Tstg -55 to 150

= 34mΩ @VGS = 10V.

DS(ON)

= 50mΩ @VGS = 4.5V.

DS(ON)

Parameter

a

DS(ON)

.

D

S

G

SOT-23

= 25 C unless otherwise noted

A

Symbol

V

DS

V

GS

I

D

I

DM

P

D

G

Limit

±20

1.25

30

4.8 20

D

S

Units

V V A

A W C

Thermal Characteristics

Parameter Symbol Limit Units

Thermal Resistance, Junction-to-Ambient

Rev 1. 2005.December

b

http://www.cetsemi.com

1

C/W100RθJA

CES2316

Electrical Characteristics T

= 25 C unless otherwise noted

A

Parameter Symbol Min Units

Off Characteristics

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse

BV

I

DSS

I

GSSF

IGSSR

DSS

On Characteristics

Gate Threshold Voltage Static Drain-Source On-Resistance

Dynamic Characteristics

d

Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance

Switching Characteristics

d

Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge

V R

t

Q

GS(th)

DS(on)

g

FS

C

iss

C

oss

C

rss

d(on)

t

r

d(off)

t

f

Q

g

Q

gs gd

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 5 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 

b

c

I

S

V

SD

Test Condition

VGS = 0V, ID = 250µA VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS = 20V, VDS = 0V

VGS = VDS, ID = 250µA VGS = 10V, ID = 6A VGS = 4.5V, ID = 4.9A

VDS = 15V, ID = 6A

VDS = 15V, VGS = 0V, f = 1.0 MHz

VDD = 15V, ID = 5.5A,  VGS = 10V, R

GEN

= 3Ω

VDS = 15V, ID = 6A, VGS = 10V

VGS = 0V, IS = 1.7A

30

1.0

Typ Max

1

100

-100

3.0 3427 5036 mΩ

8 610 145

95

9

20

3

24

4

12.3

8 50 10 16

1.5

2.5

1.7

1.2

V

µA

nA nA

V

mΩ

S pF pF pF

ns ns ns

ns nC nC nC

A V

8

2

CES2316

40

30

20

10

ID, Drain Current (A)

0

0 1 2 53 4

VGS=10,9,8,7,6V

VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

900

750

600

450

300

C, Capacitance (pF)

150

0

0 3 6 9 12 15

C

iss

C

oss

C

rss

VDS, Drain-to-Source Voltage (V)

40

V

=5V

GS

30

V

=4V

GS

V

=3V

GS

20

10

ID, Drain Current (A)

0

TJ=125 C

0 2 4 61 3 5

25 C

-55 C

VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

2.2 ID=6A

VGS=10V

1.9

1.6

1.3

1.0

RDS(ON), Normalized

0.7

RDS(ON), On-Resistance(Ohms)

0.4

-100 -50 0 50 100 150 200

TJ, Junction Temperature( C)

Figure 3. Capacitance

1.3 VDS=V

GS

ID=250µA

1.2

1.1

1.0

0.9

0.8

VTH, Normalized

0.7

Gate-Source Threshold Voltage

0.6

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variation

with Temperature

Figure 4. On-Resistance Variation

with Temperature

V

=0

V

GS

1

10

0

10

IS, Source-drain current (A)

-1

10

0.4 0.6 0.8 1.0 1.41.2

VSD, Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

3

CES2316

10

VDS=15V ID=6A

8

6

4

2

VGS, Gate to Source Voltage (V)

0

0 3 6 9 1512

Qg, Total Gate Charge (nC)

Figure 7. Gate Charge

IN

V

GS

GEN

R

G

2

10

1

R

DS(ON)

TA=25 C TJ=150 C

Single Pulse

-2

10

Limit

10

-1

10

0

10

-1

10

ID, Drain Current (A)

-2

10

DC

0

100ms

1s

1ms

10ms

10

1

2

10

VDS, Drain-Source Voltage (V)

Figure 8. Maximum Safe

Operating Area

DD

V

on

t

d(off)

t

r

t

90%

10% 10%

INVERTED

50% 50%

V

d(on)

t

OUT

IN

10%

R

L

D

OUT

V

S

90%

t

off

f

t

90%

8

PULSE WIDTH

Figure 9. Switching Test Circuit

0

10

D=0.5

0.2

-1

0.1

10

0.05

0.02

0.01

-2

10

r(t),Normalized Effective

Single Pulse

Transient Thermal Impedance

-3

10

-4

10

-3

10

Figure 11. Normalized Thermal Transient Impedance Curve

Figure 10. Switching Waveforms

-2

10

-1

10

Square Wave Pulse Duration (sec)

4

PDM

t1

t2

1. RθJA (t)=r (t) * RθJA

2. RθJA=See Datasheet

3. TJM-TA = P* RθJA (t)

4. Duty Cycle, D=t1/t2

0

10

1

10

2

10