Page 1
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
CES2312
20V, 4.5A, R
R
High dense cell design for extremely low R
Rugged and reliable.
Lead free product is acquired.
SOT-23 package.
ABSOLUTE MAXIMUM RATINGS T
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation
Operating and Store Temperature Range TJ,Tstg -55 to 150
= 33mΩ @VGS = 4.5V.
DS(ON)
= 40mΩ @VGS = 2.5V.
DS(ON)
Parameter
a
DS(ON)
.
D
S
G
SOT-23
= 25 C unless otherwise noted
A
Symbol
V
DS
V
GS
I
D
I
DM
P
D
G
Limit
13.5
1.25
20
±8
4.5
D
S
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter Symbol Limit Units
Thermal Resistance, Junction-to-Ambient
2005.November http://www.cetsemi.com
b
7 - 22
C/W100RθJA
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CES2312
Electrical Characteristics T
= 25 C unless otherwise noted
A
Parameter Symbol Min Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
c
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics
d
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
d
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
R
BV
C
C
C
t
d(on)
t
d(off)
Q
Q
DSS
I
DSS
I
GSSF
IGSSR
GS(th)
DS(on)
g
FS
iss
oss
rss
t
r
t
f
Q
g
gs
gd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
b
c
I
S
V
SD
Test Condition
VGS = 0V, ID = 250µA
VDS = 20V, VGS = 0V
VGS = 8V, VDS = 0V
VGS = -8V, VDS = 0V
VGS = VDS, ID = 250µA
VGS = 4.5V, ID = 5.0A
VGS = 2.5V, ID = 4.5A
VDS = 10V, ID = 5.0A
VDS = 8V, VGS = 0V,
f = 1.0 MHz
VDD = 10V, ID = 1A,
VGS = 4.5V, R
GEN
= 6Ω
VDS = 10V, ID = 5.0A,
VGS = 4.5V
VGS = 0V, IS = 1A
Typ Max
20
100
-100
0.5 1.2
33
27
40 mΩ
33
10
500
300
140
20
40
18
40
60
108
28
56
10
15
2.3
2.9
1.0
1.2
V
1
µA
nA
nA
V
mΩ
7
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
7 - 23
Page 3
CES2312
10
8
6
4
ID, Drain Current (A)
2
0
0.0 0.5 1.0 3.01.2 2.0 2.5
VGS=4.5,3.5,2.5V
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
1200
1000
800
600
400
C, Capacitance (pF)
200
0
0 2 4 6 8 10
VDS, Drain-to-Source Voltage (V)
25
20
15
ID, Drain Current (A)
10
5
TJ=125 C
0
0 1
V
=2.0V
GS
V
=1.5V
GS
25 C
-55 C
2
3
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2
ID=4.5A
VGS=4.5V
1.9
1.6
C
iss
C
oss
C
rss
1.3
1.0
RDS(ON), Normalized
0.7
RDS(ON), On-Resistance(Ohms)
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 3. Capacitance
1.3
VDS=V
GS
ID=250µA
1.2
1.1
1.0
0.9
0.8
VTH, Normalized
0.7
Gate-Source Threshold Voltage
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
7 - 24
Figure 4. On-Resistance Variation
with Temperature
V
=0
V
GS
1
10
0
10
IS, Source-drain current (A)
-1
10
0.2 0.4 0.6 0.8
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
1.21.0
Page 4
5
VDS=10V
ID=4.5A
4
3
2
1
VGS, Gate to Source Voltage (V)
0
0 2 4 1086
Qg, Total Gate Charge (nC)
CES2312
2
10
1
R
10
0
10
-1
10
ID, Drain Current (A)
-2
10
Limit
DS(ON)
100ms
1s
DC
TA=25 C
TJ=150 C
Single Pulse
-2
10
-1
10
0
10
VDS, Drain-Source Voltage (V)
10ms
1ms
10
1
2
10
7
Figure 7. Gate Charge
IN
V
D
V
GS
GEN
R
G
S
Figure 9. Switching Test Circuit
0
10
D=0.5
-1
10
0.2
0.1
-2
0.05
10
10
-3
-4
10
0.02
Single Pulse
-3
10
r(t),Normalized Effective
Transient Thermal Impedance
DD
V
R
L
OUT
V
-2
10
Square Wave Pulse Duration (sec)
Figure 8. Maximum Safe
on
t
r
t
90%
10% 10%
INVERTED
50% 50%
V
V
d(on)
t
OUT
IN
10%
PULSE WIDTH
Figure 10. Switching Waveforms
PDM
-1
10
0
10
Operating Area
t
off
d(off)
t
90%
90%
t1
t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
1
10
f
t
2
10
Figure 11. Normalized Thermal Transient Impedance Curve
7 - 25
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