Datasheet ces2310 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

CES2310

30V, 4.8A, R

R

R

R

High dense cell design for extremely low R

= 34mΩ @VGS = 10V.

DS(ON)

= 38mΩ @VGS = 4.5V.

DS(ON)

= 50mΩ @VGS = 2.5V.

DS(ON)

= 60mΩ @VGS = 1.8V.

DS(ON)

DS(ON)

.

Rugged and reliable.

Lead-free plating ; RoHS compliant.

SOT-23 package.

G

D

ABSOLUTE MAXIMUM RATINGS T

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed

Maximum Power Dissipation

a

S

G

SOT-23

= 25 C unless otherwise noted

A

Symbol

V

DS

V

GS

I

D

I

DM

P

D

Limit

±12

1.25

Operating and Store Temperature Range TJ,Tstg -55 to 150

30

4.8

20

D

S

Units

V

V

A

A

W

C

Thermal Characteristics

Parameter Symbol Limit Units

Thermal Resistance, Junction-to-Ambient

Details are subject to change without notice .

b

C/W100RθJA

Rev 4. 2011.Jan

http://www.cetsemi.com

1

CES2310

Electrical Characteristics T

= 25 C unless otherwise noted

A

Parameter Symbol Min Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

On Characteristics

c

Gate Threshold Voltage

Static Drain-Source

On-Resistance

Dynamic Characteristics

d

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics

d

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V

R

BV

C

C

C

t

d(on)

t

d(off)

Q

Q

DSS

I

DSS

I

GSSF

IGSSR

GS(th)

DS(on)

iss

oss

rss

t

r

t

f

Q

g

gs

gd

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 5 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.


b

c

I

S

V

SD

Test Condition

VGS = 0V, ID = 250µA

VDS = 30V, VGS = 0V

VGS = 12V, VDS = 0V

VGS = -12V, VDS = 0V

VGS = VDS, ID = 250µA

VGS = 10V, ID = 4.8A

VGS = 4.5V, ID = 4A

VGS = 2.5V, ID = 2A

VGS = 1.8V, ID = 1A

VDS = 15V, VGS = 0V,
f = 1.0 MHz

VDD = 15V, ID = 4.8A,
VGS = 10V, R

GEN

= 3Ω

VDS = 15V, ID = 4.8A,
VGS = 4.5V

VGS = 0V, IS = 1A

Typ Max

30

100

-100

0.4 1

28

31

38

735

90

65

10

3

40

2

9.0

1.0

2.0

3427

38

50

60

20

80

12

V

1

µA

nA

nA

V

mΩ

mΩ

mΩ

mΩ

pF

pF

pF

ns

6

ns

ns

4

ns

nC

nC

nC

1

A

1

V

2

CES2310

8

6

4

2

ID, Drain Current (A)

0

0 0.2 0.4 1.00.6 0.8

VGS=10,8,6,4,2V

VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

900

750

600

450

300

C, Capacitance (pF)

150

C

rss

0

0 3 6 9 12 15

C

oss

VDS, Drain-to-Source Voltage (V)

10

25 C

8

6

4

ID, Drain Current (A)

2

V

=1.0V

GS

TJ=125 C

0

0 1.0 2.0 3.00.5 1.5

-55 C

2.5

VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

2.2
ID=4.8A

VGS=10V

C

iss

1.9

1.6

1.3

1.0

RDS(ON), Normalized

0.7

RDS(ON), On-Resistance(Ohms)

0.4

-100 -50 0 50 100 150 200

TJ, Junction Temperature( C)

Figure 3. Capacitance

1.3
VDS=V

GS

ID=250µA

1.2

1.1

1.0

0.9

0.8

VTH, Normalized

0.7

Gate-Source Threshold Voltage

0.6

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variation

with Temperature

Figure 4. On-Resistance Variation

with Temperature

V

=0

V

GS

1

10

0

10

-1

10

0.6 0.7 0.8 0.9

1.11.0

VSD, Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

3

5

VDS=15V

ID=4.8A

4

3

2

1

VGS, Gate to Source Voltage (V)

0

0 3 6 9

Qg, Total Gate Charge (nC)

CES2310

2

10

R

Limit

DS(ON)

1

10

0

10

-1

10

ID, Drain Current (A)

-2

10

TA=25 C
TJ=150 C

Single Pulse

-1

10

0

10

VDS, Drain-Source Voltage (V)

DC

100ms

1s

10ms

10

1ms

1

2

10

Figure 7. Gate Charge

IN

V

D

V

GS

GEN

R

G

S

Figure 9. Switching Test Circuit

0

10

D=0.5

0.2

-1

0.1

10

0.05

10

-2

-4

10

0.02

Single Pulse

-3

10

r(t),Normalized Effective

Transient Thermal Impedance

DD

V

R

L

OUT

V

-2

10

Square Wave Pulse Duration (sec)

Figure 8. Maximum Safe

on

t

r

t

90%

10% 10%

INVERTED

50% 50%

V

V

d(on)

t

OUT

IN

10%

PULSE WIDTH

Figure 10. Switching Waveforms

PDM

-1

10

0

10

Operating Area

t

off

d(off)

t

90%

90%

t1

t2

1. RθJA (t)=r (t) * RθJA

2. RθJA=See Datasheet

3. TJM-TA = P* RθJA (t)

4. Duty Cycle, D=t1/t2

1

10

f

t

2

10

Figure 11. Normalized Thermal Transient Impedance Curve

4