Datasheet ces2309 Datasheet

CES2309

P-Channel Enhancement Mode Field Effect Transistor

FEATURES

-20V, -2.2A, R R High dense cell design for extremely low R

Rugged and reliable. Lead free product is acquired. SOT-23 package.

ABSOLUTE MAXIMUM RATINGS T

Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed

Maximum Power Dissipation

Operating and Store Temperature Range TJ,Tstg -55 to 150

= 165mΩ @VGS = -4.5V.

DS(ON)

= 300mΩ @VGS = -2.5V.

DS(ON)

Parameter

a

DS(ON)

.

D

S

G

SOT-23

= 25 C unless otherwise noted

A

Symbol

V

DS

V

GS

I

D

I

DM

P

D

G

Limit

1.25

-20 12

±

-2.2

-8

PRELIMINARY

D

S

Units

V V A

A W C

Thermal Characteristics

Parameter Symbol Limit Units

Thermal Resistance, Junction-to-Ambient

This is preliminary information on a new product in development now . Details are subject to change without notice .

b

7 - 6

C/W100RθJA

Rev 1. 2006.April

http://www.cetsemi.com

CES2309

Electrical Characteristics T

= 25 C unless otherwise noted

A

Parameter Symbol Min Units

Off Characteristics

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse

On Characteristics

c

Gate Threshold Voltage Static Drain-Source On-Resistance

Dynamic Characteristics

d

Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance

Switching Characteristics

d

Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge

V R

BV

C C C

t

d(on)

t

d(off)

Q Q

DSS

I

DSS

I

GSSF

IGSSR

GS(th)

DS(on)

g

FS iss oss rss

t

r

t

f

Q

g

gs

gd

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 5 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 

b

c

I

S

V

SD

Test Condition

VGS = 0V, ID = -250µA VDS = -20V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V

VGS = VDS, ID = -250µA VGS = -4.5V, ID = -2.2A VGS = -2.5V, ID = -2.0A

VDS = -5V, ID = -2.2A

VDS = -6V, VGS = 0V, f = 1.0 MHz

VDD = -6V, ID = -1A,  VGS = -4.5V, R

GEN

= 6Ω

VDS = -6V, ID = -2.2A, VGS = -4.5V

VGS = 0V, IS = -2.2A

Typ Max

-20

-1

100

-100

-0.5 -1.5 165135 300230 mΩ

3 275 105

70

10

20

4

10

19

40

5

10

6.2

10

0.5

0.8

-2.2

-1.2

V

µA

nA nA

V

mΩ

S

pF pF pF

ns ns ns

ns nC nC nC

A V

7

7 - 7

CES2309

5

-VGS=4.5,4,3,V

4

3

2

-ID, Drain Current (A)

1

0

0 1 4 532

-VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

360

C

300

240

180

120

C, Capacitance (pF)

60

0

0 2 4 6 8

iss

C

oss

C

rss

-VDS, Drain-to-Source Voltage (V)

-VGS=2.5V

-V

=2.0

GS

-V

=1.5

GS

5

4

3

V

2

-ID, Drain Current (A)

1

0

0 1.0 2.0 3.00.5 1.5

TJ=125 C

25 C

-55 C

2.5

-VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

2.2 ID=-2.2A

VGS=-4.5V

1.9

1.6

1.3

1.0

RDS(ON), Normalized

0.7

RDS(ON), On-Resistance(Ohms)

0.4

10

-100 -50 0 50 100 150 200

TJ, Junction Temperature( C)

Figure 3. Capacitance

1.3 VDS=V

GS

ID=-250µA

1.2

1.1

1.0

0.9

0.8

VTH, Normalized

0.7

Gate-Source Threshold Voltage

0.6

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variation

with Temperature

7 - 8

Figure 4. On-Resistance Variation

with Temperature

V

=0

V

GS

1

10

0

10

-IS, Source-drain current (A)

-1

10

0.4 0.6 0.8 1.0

-VSD, Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

1.41.2

5

VDS=-6V ID=-2.2A

4

3

2

1

-VGS, Gate to Source Voltage (V)

0

0 1.6 3.2 4.8 6.4

Qg, Total Gate Charge (nC)

CES2309

2

10

R

Limit

DS(ON)

1

10

0

10

-1

10

-ID, Drain Current (A)

-2

10

TA=25 C TJ=150 C

Single Pulse

-1

10

0

10

-VDS, Drain-Source Voltage (V)

DC

10ms 100ms 1s

1ms

10

1

2

10

7

Figure 7. Gate Charge

IN

V

D

V

GS

GEN

R

G

S

Figure 9. Switching Test Circuit

0

10

D=0.5

0.2

-1

0.1

10

0.05

0.02

0.01

-2

10

r(t),Normalized Effective

Single Pulse

Transient Thermal Impedance

-3

10

-4

10

-3

10

DD

V

R

L

OUT

V

-2

10

Square Wave Pulse Duration (sec)

Figure 8. Maximum Safe

on

t

r

t

90%

10% 10%

INVERTED

50% 50%

V

d(on)

t

OUT

IN

10%

PULSE WIDTH

Figure 10. Switching Waveforms

PDM

-1

10

0

10

Operating Area

t

off

d(off)

t

90%

t1

t2

1. RθJA (t)=r (t) * RθJA

2. RθJA=See Datasheet

3. TJM-TA = P* RθJA (t)

4. Duty Cycle, D=t1/t2

1

10

f

t

2

10

Figure 11. Normalized Thermal Transient Impedance Curve

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