Datasheet cepf640_cebf640_ceff640 Datasheet

CEPF640/CEBF640

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

Type V

CEPF640 200V 0.15Ω 19A 10V

CEBF640 200V 0.15Ω 19A 10V

CEFF640 200V 0.15Ω 19A

DSS

R

DS(ON)

I

@V

D

d

GS

10V

CEFF640

Super high dense cell design for extremely low R

DS(ON)

.

High power and current handing capability.

Lead free product is acquired.

TO-220 & TO-263 & TO-220F full-pak for through hole.

D

G

S

CEB SERIES
TO-263(DD-PAK)

G

D

S

CEP SERIES
TO-220

ABSOLUTE MAXIMUM RATINGS T

Parameter Symbol

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed

Maximum Power Dissipation @ TC = 25 C

a

- Derate above 25 C

G

D

S

CEF SERIES
TO-220F

= 25 C unless otherwise noted

c

V

DS

V

GS

I

D

e

I

DM

P

D

G

Limit

TO-220/263 TO-220F

19

76

125

1.0

Operating and Store Temperature Range TJ,Tstg -55 to 150

Thermal Characteristics

Parameter Symbol Limit Units

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

RθJA

1.0RθJC

62.5

200

±20

D

S

19

76

40

0.32

3.1

65

Units

V

V

d

d

A

A

W

W/ C

C

C/W

C/W

Details are subject to change without notice .

Rev 3. 2008.Oct.

http://www.cetsemi.com

1

CEPF640/CEBF640

CEFF640

Electrical Characteristics T

= 25 C unless otherwise noted

c

Parameter Symbol Min Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

On Characteristics

b

Gate Threshold Voltage

Static Drain-Source

On-Resistance

Dynamic Characteristics

c

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics

c

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V

R

BV

C

C

C

t

d(on)

t

d(off)

Q

Q

DSS

I

DSS

I

GSSF

IGSSR

GS(th)

DS(on)

g

FS

iss

oss

rss

t

r

t

f

Q

g

gs

gd

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by des ign, not subject to production testing .
d.Limited only by maximum temperature allowed .
e .Pulse width limited by safe operating area .
f .Full package I
g.Full package VSD test condition IS = 10.5A .

i.L = 1mH, IAS = 25A, VDD = 25V, RG = 25Ω, Starting TJ = 25 C

S(max)

= 10.5A .

b

f

IS

V

SD

Test Condition

VGS = 0V, ID = 250µA

VDS = 160V, VGS = 0V

VGS = 20V, VDS = 0V

VGS = -20V, VDS = 0V

VGS = VDS, ID = 250µA

VGS = 10V, ID = 10A

VDS = 10V, ID = 9A

VDS = 25V, VGS = 0V,
f = 1.0 MHz

VDD = 100V, ID = 11A,
VGS = 10V, R

GEN

= 9.1Ω

VDS = 160V, ID = 19A,
VGS = 10V

VGS = 0V, IS = 19A

g

Typ Max

200

2 4

0.125

9

1955

355

55

21

5

66

11

44

8

14

25

100

-100

0.150

42

10

132

22

57

19

1.5

4

V

µA

nA

nA

V

Ω

S

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

A

V

2

CEPF640/CEBF640

CEFF640

12

10

8

6

4

ID, Drain Current (A)

2

0

0.0 0.5 1.0 2.01.5 2.5 3.0

VGS=10,9,8,7V

VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

3000

2500

2000

1500

1000

C, Capacitance (pF)

500

0

0 5 10 15 20 25

C

iss

C

oss

C

rss

VDS, Drain-to-Source Voltage (V)

40

30

V

=6V

GS

20

10

ID, Drain Current (A)

0

3 4 5 6 7 8

-55 C

25 C

TJ=125 C

VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

3.0
ID=10A

VGS=10V

2.5

2.0

1.5

1.0

RDS(ON), Normalized

0.5

RDS(ON), On-Resistance(Ohms)

0.0

-100 -50 0 50 100 150 200

TJ, Junction Temperature( C)

Figure 3. Capacitance

1.3
VDS=V

GS

ID=250µA

1.2

1.1

1.0

0.9

0.8

VTH, Normalized

0.7

Gate-Source Threshold Voltage

0.6

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variation

with Temperature

Figure 4. On-Resistance Variation

with Temperature

V

=0

V

GS

1

10

0

10

IS, Source-drain current (A)

-1

10

0.4 0.6 0.8 1.0

1.2 1.4

VSD, Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

3

CEPF640/CEBF640

CEFF640

10

VDS=160V
ID=19A

8

6

4

2

VGS, Gate to Source Voltage (V)

0

0 16 32 48 64

8 24 40 56

Qg, Total Gate Charge (nC)

Figure 7. Gate Charge

DD

V

IN

V

R

D

V

GS

GEN

R

G

S

2

10

R

ID, Drain Current (A)

1

10

0

10

DS(ON)

TC=25 C
TJ=150 C

Single Pulse

0

10

Limit

10ms

DC

1

10

1ms

100ms

10ms

10

4

2

VDS, Drain-Source Voltage (V)

Figure 8. Maximum Safe

Operating Area

on

t

d(off)

t

r

d(on)

L

OUT

V

t

OUT

V

IN

V

10%

t

90%

10% 10%

INVERTED

50% 50%

90%

t

off

f

t

90%

PULSE WIDTH

Figure 9. Switching Test Circuit

0

10

D=0.5

0.2

-1

0.1

10

0.05

0.02

0.01

10

-2

-5

10

Single Pulse

-4

10

r(t),Normalized Effective

Transient Thermal Impedance

Figure 11. Normalized Thermal Transient Impedance Curve

Figure 10. Switching Waveforms

-3

10

-2

10

Square Wave Pulse Duration (sec)

4

PDM

t1

t2

1. RθJC (t)=r (t) * RθJC

2. RθJC=See Datasheet

3. TJM-TC = P* RθJC (t)

4. Duty Cycle, D=t1/t2

-1

10

0

10

1

10