Page 1
CEP6036/CEB6036
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 135A, R
Super high dense cell design for extremely low R
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-220 & TO-263 package.
ABSOLUTE MAXIMUM RATINGS T
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation @ TC = 25 C
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Current
Operating and Store Temperature Range
= 4.6mΩ @VGS = 10V.
DS(ON)
G
S
CEB SERIES
TO-263(DD-PAK)
Parameter
@ TC = 25 C
@ TC = 100 C
a
- Derate above 25 C
.
DS(ON)
D
G
G
D
S
CEP SERIES
TO-220
= 25 C unless otherwise noted
c
Symbol
V
DS
V
GS
I
D
I
DM
P
D
d
d
E
I
TJ,T
AS
AS
stg
PRELIMINARY
D
S
Limit
Units
60
±20
135
95
540
167
1.1
400
40
-55 to 175 C
W/ C
mJ
V
V
A
A
A
W
A
Thermal Characteristics
Parameter Symbol Limit Units
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
This is preliminary information on a new product in development now .
Details are subject to change without notice .
RθJA
1
0.9RθJC
62.5
C/W
C/W
Rev 1. 2012.Jun
http://www.cetsemi.com
Page 2
CEP6036/CEB6036
Electrical Characteristics T
= 25 C unless otherwise noted
c
Parameter Symbol Min Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Gate input resistance
Dynamic Characteristics
c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
c
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
R
BV
C
C
C
t
d(on)
t
d(off)
Q
Q
DSS
I
DSS
I
GSSF
IGSSR
GS(th)
DS(on)
R
g
iss
oss
rss
t
r
t
f
Q
g
gs
gd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by des ign, not subject to production testing .
d.L = 0.5mH, IAS =40A, VDD = 24V, RG = 25Ω, Starting TJ = 25 C
b
I
S
V
SD
Test Condition
VGS = 0V, ID = 250µA
Typ Max
60
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = 250µA
2 4
VGS = 10V, ID = 30A
f=1MHz,open Drain 1.9
VDS = 25V, VGS = 0V,
f = 1.0 MHz
6145
450
300
VDD = 30V, ID = 30A,
VGS = 10V, R
VDS = 48V, ID = 30A,
GEN
= 3.6Ω
138
VGS = 10V
VGS = 0V, IS = 30A
34
23
82
25
34
46
1
100
-100
4.63.7
68
46
164
50
179
135
1.2
V
µA
nA
nA
V
mΩ
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
2
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CEP6036/CEB6036
180
150
120
90
60
ID, Drain Current (A)
30
0
0 2 4 86
VGS=10,9,8,7V
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
7200
6000
4800
3600
2400
C, Capacitance (pF)
1200
C
rss
0
0 5 10 15 20 25
C
iss
C
oss
VDS, Drain-to-Source Voltage (V)
VGS=6V
V
=5V
GS
200
150
100
50
ID, Drain Current (A)
10
TJ=125 C
0
0 2 4 6
25 C
-55 C
8 10
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.6
ID=30A
VGS=10V
2.2
1.8
1.4
1.0
RDS(ON), Normalized
0.6
RDS(ON), On-Resistance(Ohms)
0.2
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 3. Capacitance
1.3
VDS=V
GS
ID=250µA
1.2
1.1
1.0
0.9
0.8
VTH, Normalized
0.7
Gate-Source Threshold Voltage
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
175
Figure 4. On-Resistance Variation
with Temperature
V
=0
V
GS
1
10
0
10
IS, Source-drain current (A)
-1
10
0.4 0.6 0.8 1.0
1.2 1.4
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
Page 4
10
VDS=48V
ID=30A
8
6
4
2
VGS, Gate to Source Voltage (V)
0
0 35 70 105 140
Qg, Total Gate Charge (nC)
CEP6036/CEB6036
3
R
10
2
10
1
10
ID, Drain Current (A)
0
10
10
Limit
DS(ON)
1ms
10ms
DC
TC=25 C
TJ=175 C
Single Pulse
-1
0
10
1
10
VDS, Drain-Source Voltage (V)
100ms
2
10
Figure 7. Gate Charge
IN
V
D
V
GS
GEN
R
G
S
Figure 9. Switching Test Circuit
0
10
D=0.5
0.2
-1
0.1
10
0.05
0.02
10
-2
-5
10
0.01
Single Pulse
-4
10
r(t),Normalized Effective
Transient Thermal Impedance
Figure 8. Maximum Safe
Operating Area
DD
V
on
t
d(off)
t
r
t
90%
10% 10%
INVERTED
50% 50%
V
V
d(on)
t
OUT
IN
10%
R
L
OUT
V
90%
t
off
f
t
90%
PULSE WIDTH
Figure 10. Switching Waveforms
PDM
t1
t2
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
-3
10
-2
10
-1
10
0
10
1
10
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
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