Datasheet cep4060a_ceb4060a Datasheet

CEP4060A/CEB4060A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

60V, 17A, R

Super high dense cell design for extremely low R

High power and current handing capability.

Lead free product is acquired.

TO-220 & TO-263 package.

ABSOLUTE MAXIMUM RATINGS T

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous @ TC = 25 C

Drain Current-Pulsed

Maximum Power Dissipation @ TC = 25 C

Operating and Store Temperature Range TJ,T

= 85mΩ @VGS = 10V.

DS(ON)

G

CEB SERIES
TO-263(DD-PAK)

Parameter

@ TC = 100 C

a

- Derate above 25 C

.

DS(ON)

D

G

G

S

D

S

CEP SERIES
TO-220

= 25 C unless otherwise noted

c

Symbol

V

DS

V

GS

I

D

I

DM

P

D

stg

D

S

Limit

60

±20

17

12

68

47

0.4

-55 to 175 C

Units

W/ C

V

V

A

A

A

W

Thermal Characteristics

Parameter Symbol Limit Units

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Details are subject to change without notice .

C/W

C/W

RθJA

3.2RθJC

50

Rev 2. 2010.Sep

http://www.cetsemi.com

1

CEP4060A/CEB4060A

Electrical Characteristics T

= 25 C unless otherwise noted

c

Parameter Symbol Min Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

On Characteristics

b

Gate Threshold Voltage

Static Drain-Source

On-Resistance

Dynamic Characteristics

c

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics

c

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V

R

BV

C

C

C

t

d(on)

t

d(off)

Q

Q

DSS

I

DSS

I

GSSF

IGSSR

GS(th)

DS(on)

iss

oss

rss

t

r

t

f

Q

g

gs

gd

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by des ign, not subject to production testing .

b

I

S

V

SD

Test Condition

VGS = 0V, ID = 250µA

VDS = 60V, VGS = 0V

VGS = 20V, VDS = 0V

VGS = -20V, VDS = 0V

VGS = VDS, ID = 250µA

VGS = 10V, ID = 7.5A

VDS = 25V, VGS = 0V,
f = 1.0 MHz

VDD = 30V, ID = 15A, 
VGS = 10V, R

GEN

= 25Ω

VDS = 48V, ID = 15A,
VGS = 10V

VGS = 0V, IS = 7.5A

Typ Max

60

2 4

2.7

68

410

115

20

12.4

2

24

6

8.1

1.6

2.4

0.8

25

100

-100

85

24.8

4

48

12

10.5

17

1.2

V

µA

uA

uA

V

mΩ

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

A

V

2

CEP4060A/CEB4060A

30

VGS=10,9,8,7V

25

20

15

10

ID, Drain Current (A)

5

0

0 2 4

VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

600

500

400

300

200

C, Capacitance (pF)

100

0

0 5 10 15 20 25

VDS, Drain-to-Source Voltage (V)

30

24

18

V

=6V

GS

V

=5V

GS

V

=4V

GS

6

12

ID, Drain Current (A)

TJ=125 C

6

0

0 2 4 4

25 C

-55 C

3

5

VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

2.2
ID=7.5A

VGS=10V

C

iss

C

oss

C

rss

1.9

1.6

1.3

1.0

RDS(ON), Normalized

0.7

RDS(ON), On-Resistance(Ohms)

0.4

-100 -50 0 50 100 150 200

TJ, Junction Temperature( C)

Figure 3. Capacitance

1.3
VDS=V

GS

ID=250µA

1.2

1.1

1.0

0.9

0.8

VTH, Normalized

0.7

Gate-Source Threshold Voltage

0.6

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variation

with Temperature

Figure 4. On-Resistance Variation

with Temperature

V

=0

V

GS

2

10

1

10

IS, Source-drain current (A)

0

10

0.4 0.6 0.8 1.0

1.2

1.4

VSD, Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

3

15

12

9

6

VDS=48V
ID=15A

CEP4060A/CEB4060A

R

Limit

DS(ON)

1

10

10ms

DC

10µs

100ms

1ms

3

VGS, Gate to Source Voltage (V)

0

0 3 6 9 12

Qg, Total Gate Charge (nC)

Figure 7. Gate Charge

DD

V

IN

V

D

V

GS

GEN

R

G

S

Figure 9. Switching Test Circuit

0

10

D=0.5

ID, Drain Current (A)

0

TC=25 C

10

TJ=175 C

Single Pulse

0

10

1

10

2

10

VDS, Drain-Source Voltage (V)

Figure 8. Maximum Safe

Operating Area

on

t

d(off)

t

r

t

90%

10% 10%

INVERTED

50% 50%

V

V

t

d(on)

OUT

IN

10%

R

L

OUT

V

90%

t

off

f

t

90%

PULSE WIDTH

Figure 10. Switching Waveforms

0.2

-1

0.1

10

0.05

0.02

10

-2

-5

10

0.01

Single Pulse

-4

10

-3

10

-2

10

10

r(t),Normalized Effective

Transient Thermal Impedance

PDM

-1

t1

t2

1. RθJC (t)=r (t) * RθJC

2. RθJC=See Datasheet

3. TJM-TC = P* RθJC (t)

4. Duty Cycle, D=t1/t2

0

10

1

10

Square Wave Pulse Duration (sec)

Figure 11. Normalized Thermal Transient Impedance Curve

4