Datasheet cep14a04_ceb14a04 Datasheet

CEP14A04/CEB14A04

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

40V, 180A, R

Super high dense cell design for extremely low R

= 5mΩ @VGS = 10V.

DS(ON)

DS(ON)

High power and current handing capability.

Lead-free plating ; RoHS compliant.

TO-220 & TO-263 package.

D

G

S

CEB SERIES
TO-263(DD-PAK)

G

D

S

ABSOLUTE MAXIMUM RATINGS T

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed

Maximum Power Dissipation @ TC = 25 C

Single Pulsed Avalanche Energy

Single Pulsed Avalanche Current

Operating and Store Temperature Range

a

- Derate above 25 C

d

d

.

G

CEP SERIES
TO-220

= 25 C unless otherwise noted

c

Symbol

V

DS

V

GS

ID@ TC = 25 C

ID@ TC = 100 C

I

DM

P

D

E

AS

I

AS

TJ,T

stg

D

S

Limit

Units

40

±20

180 A

125

720

200

1.3

633

65

-55 to 175 C

W/ C

mJ

V

V

A

A

W

A

Thermal Characteristics

Parameter Symbol Limit Units

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Details are subject to change without notice .

C/W

C/W

RθJA

0.75RθJC

62.5

Rev 3. 2011.Nov

http://www.cetsemi.com

1

CEP14A04/CEB14A04

Electrical Characteristics T

= 25 C unless otherwise noted

c

Parameter Symbol Min Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

On Characteristics

b

Gate Threshold Voltage

Static Drain-Source

On-Resistance

Forward Transconductance

Dynamic Characteristics

c

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics

c

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V

R

BV

C

C

C

t

d(on)

t

d(off)

Q

Q

DSS

I

DSS

I

GSSF

IGSSR

GS(th)

DS(on)

g

FS

iss

oss

rss

t

r

t

f

Q

g

gs

gd

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by des ign, not subject to production testing .
d.L = 0.3mH, IAS = 65A, VDD = 25V, RG = 25Ω, Starting TJ = 25 C

b

I

S

V

SD

Test Condition

VGS = 0V, ID = 250µA

VDS = 40V, VGS = 0V

VGS = 20V, VDS = 0V

VGS = -20V, VDS = 0V

VGS = VDS, ID = 250µA

VGS = 10V, ID = 70A

VDS = 25V, ID = 70A

VDS = 25V, VGS = 0V,
f = 1.0 MHz

VDD = 28V, ID = 10A,
VGS = 10V, R

GEN

= 4.5Ω

VDS = 32V, ID = 70A,
VGS = 10V

VGS = 0V, IS = 70A

Typ Max

40

2 4

30

3390

1445

185

32

20

82

35

110

14.4

44.4

25

100

-100

54.2

64

40

164

70

143

180

1.3

V

µA

nA

nA

V

mΩ

S

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

A

V

2

CEP14A04/CEB14A04

180

150

120

90

60

ID, Drain Current (A)

30

0

0 0.5 1 21.5

VGS=10,9,8,7V

VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

6600

5500

4400

3300

2200

C, Capacitance (pF)

1100

0

0 5 10 15 20 25

VDS, Drain-to-Source Voltage (V)

C

C

V

V

C

oss

rss

=6V

GS

=5V

GS

2.5 3

iss

240

180

120

60

ID, Drain Current (A)

0

0 2 4 6

TJ=125 C

VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

2.6
ID=70A

VGS=10V

2.2

1.8

1.4

1.0

RDS(ON), Normalized

0.6

RDS(ON), On-Resistance(Ohms)

0.2

-100 -50 0 50 100 150 200

TJ, Junction Temperature( C)

25 C

-55 C

8 10

Figure 3. Capacitance

1.3
VDS=V

GS

ID=250µA

1.2

1.1

1.0

0.9

0.8

VTH, Normalized

0.7

Gate-Source Threshold Voltage

0.6

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variation

with Temperature

Figure 4. On-Resistance Variation

with Temperature

V

=0

V

GS

1

10

0

10

IS, Source-drain current (A)

-1

10

0.4 0.6 0.8 1.0

1.2 1.4

VSD, Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

3

10

VDS=32V
ID=70A

8

6

4

2

VGS, Gate to Source Voltage (V)

0

0 30 60 90 120

Qg, Total Gate Charge (nC)

CEP14A04/CEB14A04

3

R

10

2

10

1

10

ID, Drain Current (A)

0

10

10

Limit

DS(ON)

100ms

1ms
10ms
DC

TC=25 C
TJ=175 C

Single Pulse

-1

0

10

1

10

VDS, Drain-Source Voltage (V)

2

10

Figure 7. Gate Charge

IN

V

D

V

GS

GEN

R

G

S

Figure 9. Switching Test Circuit

0

10

D=0.5

0.2

0.1

-1

10

0.05

0.02

0.01

r(t),Normalized Effective

Single Pulse

Transient Thermal Impedance

-2

10

-2

10

-1

10

DD

V

R

L

OUT

V

0

10

10

Square Wave Pulse Duration (msec)

Figure 8. Maximum Safe

Operating Area

on

t

d(off)

t

r

t

90%

10% 10%

INVERTED

50% 50%

V

V

d(on)

t

OUT

IN

10%

PULSE WIDTH

Figure 10. Switching Waveforms

PDM

1. RθJC (t)=r (t) * RθJC

2. RθJC=See Datasheet

3. TJM-TC = P* RθJC (t)

4. Duty Cycle, D=t1/t2

1

2

10

t

off

f

t

90%

90%

t1

t2

3

10

4

10

Figure 11. Normalized Thermal Transient Impedance Curve

4