Page 1
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
CEN7002A
60V, 0.25A, R
R
High dense cell design for extremely low R
= 3 Ω @VGS = 10V.
DS(ON)
= 4 Ω @VGS = 4.5V.
DS(ON)
DS(ON)
.
Rugged and reliable.
Lead free product is acquired.
SOT-23-T package.
CEN7002A
SOT-23-T
Die upside up
D
G
SOT-23-T
G
S
package.
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation
a
= 25 C unless otherwise noted
A
Symbol
V
DS
V
GS
I
D
I
DM
P
D
Limit
±20
0.25
0.35
Operating and Store Temperature Range TJ,Tstg -55 to 150
60
1.3
D
S
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter Symbol Limit Units
Thermal Resistance, Junction-to-Ambient
2004.December http://www.cetsemi.com
b
C/W350RθJA
7 - 30
Page 2
CEN7002A
Electrical Characteristics T
= 25 C unless otherwise noted
A
Parameter Symbol Min Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
c
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics
d
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
d
Turn-On Time
Turn-Off Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
R
BV
C
C
C
t
d(on)
t
d(off)
Q
Q
DSS
I
DSS
I
GSSF
IGSSR
GS(th)
DS(on)
g
FS
iss
oss
rss
Q
g
gs
gd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
b
c
I
S
V
SD
Test Condition
VGS = 0V, ID = 10µA
VDS = 60V, VGS = 0V
VGS = 16V, VDS = 0V
VGS = -16V, VDS = 0V
VGS = VDS, ID = 250µA
VGS = 10V, ID = 0.25A
VGS = 4.5V, ID = 0.2A
VDS = 15V, ID = 0.2A
VDS = 5V, VGS = 0V,
f = 1.0 MHz
VDD = 10V, ID = 0.25A,
VGS = 10V, R
GEN
= 10Ω
VDS = 15V, ID = 0.25A,
VGS = 4.5V
VGS = 0V, IS = 0.2A
Typ Max
60
1 2.5
1.2
1.8
0.6
30
6.5
2.1
9
21
0.6
0.1
0.08
1
0.1
-0.1
3
4 Ω
15
26
0.7
0.8
1.2
V
µA
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
nC
nC
nC
A
V
7
7 - 31
Page 3
CEN7002A
1.0
VGS=10,7,6V
0.8
0.6
0.4
ID, Drain Current (A)
0.2
0.0
0 1 2 53 4
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
60
50
40
C
30
20
C, Capacitance (pF)
10
0
0 2 4 6 8 10
iss
C
oss
C
rss
VDS, Drain-to-Source Voltage (V)
1.2
25 C
V
=5V
GS
V
=4V
GS
V
=3V
GS
0.9
0.6
0.3
ID, Drain Current (A)
0.0
TJ=125 C
0 2
-55 C
4
6
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2
ID=0.25A
VGS=10V
1.9
1.6
1.3
1.0
RDS(ON), Normalized
0.7
RDS(ON), On-Resistance(Ohms)
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 3. Capacitance
1.3
VDS=V
GS
ID=250µA
1.2
1.1
1.0
0.9
0.8
VTH, Normalized
0.7
Gate-Source Threshold Voltage
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
7 - 32
Figure 4. On-Resistance Variation
with Temperature
V
=0
V
GS
1
10
0
10
IS, Source-drain current (A)
-1
10
0.2 0.4 0.6 0.8
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
1.21.0
Page 4
5
VDS=15V
ID=0.25A
4
3
2
1
VGS, Gate to Source Voltage (V)
0
0.0 0.4 0.6 0.8
0.2
Qg, Total Gate Charge (nC)
CEN7002A
1
10
0
10
R
Limit
DS(ON)
-1
10
-2
10
ID, Drain Current (A)
-3
10
TA=25 C
TJ=150 C
Single Pulse
-1
10
0
10
VDS, Drain-Source Voltage (V)
DC
100ms
1s
10
10ms
1
1ms
2
10
7
Figure 7. Gate Charge
IN
V
D
V
GS
GEN
R
G
S
Figure 9. Switching Test Circuit
0
10
D=0.5
0.2
-1
0.1
10
0.05
10
-2
-4
10
0.02
Single Pulse
-3
10
r(t),Normalized Effective
Transient Thermal Impedance
DD
V
R
L
OUT
V
-2
10
Square Wave Pulse Duration (sec)
Figure 8. Maximum Safe
on
t
r
t
90%
10% 10%
INVERTED
50% 50%
V
V
d(on)
t
OUT
IN
10%
PULSE WIDTH
Figure 10. Switching Waveforms
PDM
-1
10
0
10
Operating Area
t
off
d(off)
t
90%
90%
t1
t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
1
10
f
t
2
10
Figure 11. Normalized Thermal Transient Impedance Curve
7 - 33
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