Page 1
CEM9436A
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 6.2A, R
R
Super high dense cell design for extremely low R
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
ABSOLUTE MAXIMUM RATINGS T
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation
Operating and Store Temperature Range TJ,Tstg -55 to 150
= 38mΩ @VGS = 10V.
DS(ON)
= 52mΩ @VGS = 4.5V.
DS(ON)
Parameter
a
SO-8
.
DS(ON)
1
= 25 C unless otherwise noted
A
Symbol
V
DS
V
GS
I
D
I
DM
P
D
D D D D
8 7 6 5
1 2 3 4
S S S G
Limit
30
±20
6.2
25
2.5
5
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter Symbol Limit Units
Thermal Resistance, Junction-to-Ambient
2003.July http://www.cetsemi.com
b
5 - 217
C/W50RθJA
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CEM9436A
Electrical Characteristics T
= 25 C unless otherwise noted
A
Parameter Symbol Min Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
c
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics
d
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
d
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
R
BV
C
C
C
t
d(on)
t
d(off)
Q
Q
DSS
I
DSS
I
GSSF
IGSSR
GS(th)
DS(on)
g
FS
iss
oss
rss
t
r
t
f
Q
g
gs
gd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
b
c
I
S
V
SD
Test Condition
VGS = 0V, ID = 250µA
VDS = 24V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = 250µA
VGS = 10V, ID = 6.2A
VGS = 4.5V, ID = 5.6A
VDS = 10V, ID = 6.2A
VDS = 15V, VGS = 0V,
f = 1.0 MHz
VDD = 10V, ID = 1A,
VGS = 10V, R
GEN
= 6Ω
VDS = 15V, ID = 6.2A,
VGS = 10V
VGS = 0V, IS = 2.5A
Typ Max
30
1 3
7
400
180
55
23
14
45
10
12
2
3
1
100
-100
3830
5240 mΩ
45
35
90
30
17
2.5
1.3
V
µA
nA
nA
V
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
5 - 218
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CEM9436A
30
VGS=10,8,6,5V
24
18
12
ID, Drain Current (A)
6
0
0 1
2
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
600
500
400
300
200
C, Capacitance (pF)
100
0
0 5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
C
C
C
3
iss
oss
rss
VGS=4V
V
=3V
GS
18
15
12
9
6
ID, Drain Current (A)
3
TJ=125 C
4
0
1 3 542
25 C
5
-55 C
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2
ID=6.2A
VGS=10V
1.9
1.6
1.3
1.0
RDS(ON), Normalized
0.7
RDS(ON), On-Resistance(Ohms)
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 3. Capacitance
1.3
VDS=V
GS
ID=250µA
1.2
1.1
1.0
0.9
0.8
VTH, Normalized
0.7
Gate-Source Threshold Voltage
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
5 - 219
Figure 4. On-Resistance Variation
with Temperature
V
=0
V
GS
1
10
0
10
IS, Source-drain current (A)
-1
10
0.4 0.6 0.8 1.0
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
1.41.2
Page 4
CEM9436A
10
VDS=15V
ID=6.2A
8
6
4
2
VGS, Gate to Source Voltage (V)
0
0 3 6 9 12
Qg, Total Gate Charge (nC)
Figure 7. Gate Charge
DD
V
IN
V
D
V
GS
GEN
R
G
S
2
10
R
Limit
DS(ON)
1
10
0
10
-1
10
ID, Drain Current (A)
-2
10
TA=25 C
TJ=150 C
Single Pulse
-2
10
-1
10
0
10
1ms
10ms
100ms
1s
DC
1
10
2
10
VDS, Drain-Source Voltage (V)
Figure 8. Maximum Safe
Operating Area
on
t
d(off)
t
r
t
90%
10% 10%
INVERTED
50% 50%
V
V
d(on)
t
OUT
IN
10%
R
L
OUT
V
90%
t
off
f
t
90%
PULSE WIDTH
Figure 9. Switching Test Circuit
0
10
D=0.5
0.2
-1
0.1
10
0.05
0.02
0.01
-2
10
r(t),Normalized Effective
Single Pulse
Transient Thermal Impedance
-3
10
-4
10
-3
10
Figure 11. Normalized Thermal Transient Impedance Curve
Figure 10. Switching Waveforms
-2
10
-1
10
Square Wave Pulse Duration (sec)
5 - 220
PDM
t1
t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
0
10
1
10
2
10
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