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cem8968
Datasheet
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Datasheet cem8968 Datasheet

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Page 1
CEM8968
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
30V, 7A, R
R
-30V, -6.2A, R
R
Super high dense cell design for extremely low R
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation
Operating and Store Temperature Range TJ,Tstg -55 to 150
= 28mΩ @VGS = 10V.
DS(ON)
= 40mΩ @VGS = 4.5V.
DS(ON)
= 33mΩ @VGS = -10V.
DS(ON)
= 52mΩ @VGS = -4.5V.
DS(ON)
Parameter
a
SO-8
.
DS(ON)
1
= 25 C unless otherwise noted
A
Symbol
V
DS
V
GS
I
D
I
DM
P
D
D1 D1 D2 D2
8 7 6 5
1 2 3 4
S1 G1 S2 G2
N-Channel
30
±20
7
28
P-Channel
2.0
-30
±20
-6.2
-25
5
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter Symbol Limit Units
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice .
b
Rev 2. 2007.Jan
http://www.cetsemi.com
1
C/W62.5RθJA
Page 2
CEM8968
N-Channel Electrical Characteristics T
Parameter Symbol Min Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics
d
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
d
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 
BV
DSS
I
DSS
I
GSSF
IGSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
b
c
I
S
V
SD
= 25 C unless otherwise noted
A
Test Condition
VGS = 0V, ID = 250µA
VDS = 24V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = 250µA
VGS = 10V, ID = 7A
VGS = 4.5V, ID = 6A
VDS = 5V, ID = 7A
VDS = 15V, VGS = 0V, f = 1.0 MHz
VDD = 15V, ID = 1A, VGS = 10V, R
GEN
=2.7Ω
VDS = 15V, ID =5.8A, VGS = 10V
VGS = 0V, IS = 1.3A
Typ Max
30
1 3
25
600
140
90
8
5
25
5
12
1.3
2.3
1
100
-100
2822
4030 mΩ
16
10
50
10
15.9
1.3
1.2
V
µA
nA
nA
V
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
2
Page 3
CEM8968
P-Channel Electrical Characteristics T
Parameter Symbol Min Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics
d
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
d
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 
BV
DSS
I
DSS
I
GSSF
IGSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
b
c
I
S
V
SD
= 25 C unless otherwise noted
A
Test Condition
VGS = 0V, ID = -250µA
VDS = -30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = -250µA
VGS = -10V, ID = -6.2A
VGS = -4.5V, ID = -4A
VDS = -10V, ID = -6.2A
VDS = -15V, VGS = 0V, f = 1.0 MHz
VDD = -15V, ID = -1A, VGS = -10V, R
GEN
= 6Ω
VDS = -15V, ID = -5.3A, VGS = -10V
VGS = 0V, IS = -1A
Typ Max
-30
-1 -3
9
1140
240
140
12
5
57
21
18.7
3.7
2.3
-1
100
-100
3327
5240 mΩ
24
10
114
42
24.8
-1.5
-1.2
V
µA
nA
nA
V
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
3
Page 4
CEM8968
N-CHANNEL
20
16
12
8
ID, Drain Current (A)
4
0
0.0 0.5 1.0 1.5 2.0
1200
1000
800
600
400
C, Capacitance (pF)
200
0
0 5 10 15 20 25
VGS=10,6,4.5,4V
VGS=3.5V
VGS=3V
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
C
iss
C
oss
C
rss
VDS, Drain-to-Source Voltage (V)
10
8
6
4
ID, Drain Current (A)
2
TJ=125 C
0
1 2 30 6
25 C
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2 ID=7A
VGS=10V
1.9
1.6
1.3
1.0
RDS(ON), Normalized
0.7
RDS(ON), On-Resistance(Ohms)
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
5
-55 C
4 5
Figure 3. Capacitance
1.3 VDS=V
GS
ID=250µA
1.2
1.1
1.0
0.9
0.8
VTH, Normalized
0.7
Gate-Source Threshold Voltage
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
Figure 4. On-Resistance Variation
with Temperature
V
=0
V
GS
1
10
0
10
IS, Source-drain current (A)
-1
10
0.4 0.6 0.8 1.0
1.41.2
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
4
Page 5
CEM8968
P-CHANNEL
30
24
18
12
-ID, Drain Current (A)
6
0
0
0
1500
1250
1000
750
500
C, Capacitance (pF)
250
0
0 5 10 15 20 25
-VGS=10,8,6V
-V
=4V
GS
-V
=3V
GS
0.5 2 3
0.5 2 32.51.51
2.51.51
-VDS, Drain-to-Source Voltage (V)
Figure 7. Output Characteristics
C
iss
C
oss
C
rss
-VDS, Drain-to-Source Voltage (V)
10
8
6
4
-ID, Drain Current (A)
2
TJ=125 C
0
0 2 4 61 3 5
25 C
-VGS, Gate-to-Source Voltage (V)
Figure 8. Transfer Characteristics
2.2 ID=-6.2A
VGS=-10V
1.9
1.6
1.3
1.0
RDS(ON), Normalized
0.7
RDS(ON), On-Resistance(Ohms)
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
-55 C
Figure 3. Capacitance
1.3 VDS=V
GS
ID=-250µA
1.2
1.1
1.0
0.9
0.8
VTH, Normalized
0.7
Gate-Source Threshold Voltage
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
Figure 4. On-Resistance Variation
with Temperature
V
=0
V
GS
1
10
0
10
-IS, Source-drain current (A)
-1
10
0.4 0.6 0.8 1.0
1.41.2
-VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
5
Page 6
CEM8968
N-CHANNEL
10
VDS=15V
ID=5.8A
8
6
4
2
VGS, Gate to Source Voltage (V)
0
0 2.5 5 7.5 12.510
P-CHANNEL
10
VDS=-15V
ID=-5.3A
8
6
4
2
-VGS, Gate to Source Voltage (V)
0
0 5 10 15 20
Qg, Total Gate Charge (nC)
Figure 13. Gate Charge
Qg, Total Gate Charge (nC)
2
10
R
Limit
DS(ON)
1
10
0
10
-1
10
ID, Drain Current (A)
-2
10
10
TA=25 C TJ=150 C
Single Pulse
-2
10
-1
10
1ms
10ms
100ms
1s
DC
0
1
10
2
10
5
VDS, Drain-Source Voltage (V)
Figure 14. Maximum Safe
Limit
DS(ON)
TA=25 C TJ=150 C
10
Operating Area
100ms
1s
DC
-1
0
10
1ms
10ms
10
1
2
10
2
10
R
1
10
0
10
-1
10
-ID, Drain Current (A)
Single Pulse
-2
10
-2
10
-VDS, Drain-Source Voltage (V)
Figure 15. Gate Charge
Figure 16. Maximum Safe
Operating Area
6
Page 7
CEM8968
DD
V
on
t
d(off)
t
r
t
90%
10% 10%
INVERTED
50% 50%
V
V
d(on)
t
OUT
IN
10%
R
IN
V
V
GS
GEN
R
G
L
D
OUT
V
S
PULSE WIDTH
90%
t
off
f
t
90%
5
Figure 17. Switching Test Circuit
0
10
D=0.5
0.2
-1
10
0.1
0.05
r(t),Normalized Effective
0.02
Transient Thermal Impedance
-2
10
-4
10
-3
10
Figure 19. Normalized Thermal Transient Impedance Curve
Single Pulse
-2
10
Square Wave Pulse Duration (sec)
Figure 18. Switching Waveforms
PDM
-1
10
0
10
t1
t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
1
10
2
10
7
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