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cem7350
Datasheet
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Datasheet cem7350 Datasheet

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Page 1
CEM7350
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
100V, 2.6A, R
-100V, -2.0A, R
Super high dense cell design for extremely low R
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation
Operating and Store Temperature Range TJ,Tstg -55 to 150
= 190mΩ @VGS = 10V.
DS(ON)
= 320mΩ @VGS = -10V.
DS(ON)
Parameter
a
SO-8
.
DS(ON)
1
= 25 C unless otherwise noted
A
Symbol
V
DS
V
GS
I
D
I
DM
P
D
D1 D1 D2 D2
8 7 6 5
1 2 3 4
S1 G1 S2 G2
N-Channel
100
±20
2.6
10
P-Channel
2.0
-100
±20
-2.0
-8.0
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter Symbol Limit Units
Thermal Resistance, Junction-to-Ambient
b
http://www.cetsemi.com2008.October
1
C/W62.5RθJA
Page 2
CEM7350
N-Channel Electrical Characteristics T
Parameter Symbol Min Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
c
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics
d
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
d
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.
BV
DSS
I
DSS
I
GSSF
IGSSR
V
GS(th)
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
b
c
I
S
V
SD
= 25 C unless otherwise noted
A
Test Condition
VGS = 0V, ID = 250µA
VDS = 100V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = 250µA
VGS = 10V, ID = 2.1A
VDS = 25V, VGS = 0V, f = 1.0 MHz
VDD = 50V, ID = 1A, VGS = 10V, R
GEN
= 22Ω
VDS = 80V, ID = 2.1A, VGS = 10V
VGS = 0V, IS = 1.8A
Typ Max
100
2 4
435
95
25
14
8
28
6
9
1.5
2.8
1
100
-100
190150
28
16
56
12
12
1.8
1.3
V
µA
nA
nA
V
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
5
2
Page 3
CEM7350
P-Channel Electrical Characteristics T
Parameter Symbol Min Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
c
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics
d
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
d
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 
BV
DSS
I
DSS
I
GSSF
IGSSR
V
GS(th)
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
b
c
I
S
V
SD
= 25 C unless otherwise noted
A
Test Condition
VGS = 0V, ID = -250µA
VDS = -100V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = -250µA
VGS = -10V, ID = -1.5A
VDS = -25V, VGS = 0V, f = 1.0 MHz
VDD = -50V, ID = -1A, VGS = -10V, R
GEN
= 22Ω
VDS = -80V, ID = -1.5A, VGS = -10V
VGS = 0V, IS = -1.4A
Typ Max
-100
-2 -4
575
115
30
15
11
57
20
14
2.5
5.0
-1
100
-100
320250
30
22
114
40
18
-1.4
-1.6
V
µA
nA
nA
V
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
3
Page 4
CEM7350
N-CHANNEL
2.5
2.0
1.5
1.0
ID, Drain Current (A)
0.5
0
0 2 4 106 8
600
500
400
300
200
C, Capacitance (pF)
100
0
0 5 10 15 20 25
VGS=10,7,6,5,V
V
=4V
GS
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
C
iss
C
oss
C
rss
VDS, Drain-to-Source Voltage (V)
5
4
3
2
TJ=125 C
0 4 8 1062
25 C
-55 C
ID, Drain Current (A)
1
0
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2 ID=2.1A
VGS=10V
1.9
1.6
1.3
1.0
RDS(ON), Normalized
0.7
RDS(ON), On-Resistance(Ohms)
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
5
Figure 3. Capacitance
1.3 VDS=V
GS
ID=250µA
1.2
1.1
1.0
0.9
0.8
VTH, Normalized
0.7
Gate-Source Threshold Voltage
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
Figure 4. On-Resistance Variation
with Temperature
V
=0
V
GS
1
10
0
10
IS, Source-drain current (A)
-1
10
0.4 0.6 0.8 1.0
1.41.2
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
4
Page 5
CEM7350
P-CHANNEL
3.0
2.5
2.0
1.5
1.0
-ID, Drain Current (A)
0.5
0
0 1 2 43 5 6
900
750
600
450
300
C, Capacitance (pF)
150
0
0 5 10 15 20 25 30
VGS=10,9,8,7,6V
V
=5V
GS
V
=4V
GS
-VDS, Drain-to-Source Voltage (V)
Figure 7. Output Characteristics
C
iss
C
oss
C
rss
-VDS, Drain-to-Source Voltage (V)
5
4
3
2
-ID, Drain Current (A)
1
TJ=125 C
0
0 4 8 1062
25 C
-VGS, Gate-to-Source Voltage (V)
Figure 8. Transfer Characteristics
2.2 ID=-1.5A
VGS=-10V
1.9
1.6
1.3
1.0
RDS(ON), Normalized
0.7
RDS(ON), On-Resistance(Ohms)
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
-55 C
Figure 9. Capacitance
1.3 VDS=V
GS
ID=-250µA
1.2
1.1
1.0
0.9
0.8
VTH, Normalized
0.7
Gate-Source Threshold Voltage
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 11. Gate Threshold Variation
with Temperature
Figure 10. On-Resistance Variation
with Temperature
V
=0
V
GS
1
10
0
10
-IS, Source-drain current (A)
-1
10
0.4 0.6 0.8 1.0
1.41.2
-VSD, Body Diode Forward Voltage (V)
Figure 12. Body Diode Forward Voltage
Variation with Source Current
5
Page 6
CEM7350
N-CHANNEL
10
VDS=80V
ID=2.1A
8
6
4
2
VGS, Gate to Source Voltage (V)
0
0 2 4 6 108
P-CHANNEL
10
VDS=-80V
ID=-1.5A
8
6
4
2
-VGS, Gate to Source Voltage (V)
0
0 4 8 12 16
Qg, Total Gate Charge (nC)
Figure 13. Gate Charge
Qg, Total Gate Charge (nC)
ID, Drain Current (A)
-ID, Drain Current (A)
2
10
R
Limit
DS(ON)
1
10
0
10
DC
-1
10
TA=25 C TJ=150 C
Single Pulse
-2
10
-1
10
0
10
VDS, Drain-Source Voltage (V)
Figure 14. Maximum Safe
Operating Area
2
10
R
Limit
DS(ON)
1
10
0
10
-1
10
-2
10
TA=25 C TJ=150 C
Single Pulse
-1
10
DC
0
10
-VDS, Drain-Source Voltage (V)
100ms
1s
1
10
100ms
1s
1
10
10ms
10ms
1ms
1ms
5
2
10
2
10
3
10
3
10
Figure 15. Gate Charge
Figure 16. Maximum Safe
Operating Area
6
Page 7
CEM7350
DD
V
on
t
d(off)
t
r
t
90%
10% 10%
INVERTED
50% 50%
V
V
d(on)
t
OUT
IN
10%
R
IN
V
V
GS
GEN
R
G
L
D
OUT
V
S
PULSE WIDTH
90%
t
off
f
t
90%
Figure 17. Switching Test Circuit
0
10
D=0.5
0.2
-1
0.1
10
0.05
0.02
0.01
-2
10
r(t),Normalized Effective
Single Pulse
Transient Thermal Impedance
-3
10
-4
10
-3
10
Figure 19. Normalized Thermal Transient Impedance Curve
Figure 18. Switching Waveforms
-2
10
-1
10
Square Wave Pulse Duration (sec)
PDM
t1
t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
0
10
1
10
2
10
7
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