Datasheet cem6659 Datasheet

CEM6659

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES

60V, 4.1A, R R

-60V, -3.1A, R R

Super high dense cell design for extremely low R High power and current handing capability.

Lead free product is acquired. Surface mount Package.

ABSOLUTE MAXIMUM RATINGS T

Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed

Maximum Power Dissipation

Operating and Store Temperature Range TJ,Tstg -55 to 150

= 68mΩ @VGS = 10V.

DS(ON)

= 86mΩ @VGS = 4.5V.

DS(ON)

= 130mΩ @VGS = -10V.

DS(ON)

= 170mΩ @VGS = -4.5V.

DS(ON)

Parameter

a

SO-8

.

DS(ON)

1

= 25 C unless otherwise noted

A

Symbol

V

DS

V

GS

I

D

I

DM

P

D

N-Channel

60

±20

4.1 15

D1 D1 D2 D2

8 7 6 5

1 2 3 4

S1 G1 S2 G2

P-Channel

±20

-3.1

2.0

-60

-12

PRELIMINARY

5

Units

V V A

A W C

Thermal Characteristics

Parameter Symbol Limit Units

Thermal Resistance, Junction-to-Ambient

This is preliminary information on a new product in development now . Details are subject to change without notice .

b

1

C/W62.5RθJA

Rev 1. 2006.May

http://www.cetsemi.com

CEM6659

N-Channel Electrical Characteristics T

Parameter Symbol Min Units

Off Characteristics

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse

On Characteristics

c

Gate Threshold Voltage Static Drain-Source On-Resistance

Dynamic Characteristics

d

Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance

Switching Characteristics

d

Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 

BV

DSS

I

DSS

I

GSSF

IGSSR

V

GS(th)

R

DS(on)

g

FS

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

b

c

I

S

V

SD

= 25 C unless otherwise noted

A

Test Condition

VGS = 0V, ID = 250µA VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V

VGS = VDS, ID = 250µA VGS = 10V, ID = 4.1A VGS = 4.5V, ID = 3.5A

VDS = 10V, ID = 4.1A VDS = 25V, VGS = 0V,

f = 1.0 MHz

VDD = 30V, ID = 1A, VGS = 10V, R

GEN

= 6Ω

VDS = 30V, ID = 4.1A, VGS = 10V

VGS = 0V, IS = 2A

Typ Max

60

1 3

5

670

80 45

11

3

30

3

13

1.7

2.6

1

100

-100

6856 8666 mΩ

25 10 60 10 17

4.1

1.2

V

µA µA µA

V

mΩ

S pF pF pF

ns ns ns

ns nC nC nC

A V

2

CEM6659

P-Channel Electrical Characteristics T

Parameter Symbol Min Units

Off Characteristics

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse

On Characteristics

b

Gate Threshold Voltage Static Drain-Source On-Resistance

Dynamic Characteristics

c

Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance

Switching Characteristics

c

Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing.

BV

DSS

I

DSS

I

GSSF

IGSSR

V

GS(th)

R

DS(on)

g

FS

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

I

b

S

V

SD

= 25 C unless otherwise noted

A

Test Condition

VGS = 0V, ID = -250µA VDS = -60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V

VGS = VDS, ID = -250µA VGS = -10V, ID = -3.1A VGS = -4.5V, ID = -2.8A

VDS = -10V, ID = -3.1A

VDS = -30V, VGS = 0V, f = 1.0 MHz

VDD = -30V, ID = -1A, VGS = -10V, R

GEN

= 6Ω

VDS = -30V, ID = -3.1A, VGS = -10V

VGS = 0V, IS = -1.3A

Typ Max

-60

-100

-1 -3

5

885

85 80

12

4 38 12 11

2.4

1.6

V

-1

µA

100

nA nA

V

130100

mΩ

170130 mΩ

S pF pF pF

25

ns

15

ns

80

ns

25

ns

14

nC nC nC

-3.1

-1.2

A

V

6

3

N-CHANNEL

25

20

15

VGS=10,8,6,5V

CEM6659

10

8

V

=4.0V

GS

6

25 C

10

5

0

0 1 2 53

VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

1200

1000

C

800

600

400

C, Capacitance (pF) ID, Drain Current (A)

200

C

rss

0

0 5 10 15 20 25

iss

C

oss

VDS, Drain-to-Source Voltage (V)

Figure 3. Capacitance

1.3 VDS=V

GS

ID=250µA

1.2

1.1

1.0

0.9

0.8

VTH, Normalized

0.7

Gate-Source Threshold Voltage

0.6

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature( C)

4

ID, Drain Current (A)

2

TJ=125 C

4

0

1.0 2.0 3.0 4.00.0 5.0

-55 C

VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

2.2 ID=4.1A

VGS=10V

1.9

1.6

1.3

1.0

RDS(ON), Normalized

0.7

RDS(ON), On-Resistance(Ohms)

0.4

-100 -50 0 50 100 150 200

TJ, Junction Temperature( C)

Figure 4. On-Resistance Variation

with Temperature

V

=0

V

GS

1

10

0

10

IS, Source-drain current (A)

-1

10

0.4 0.6 0.8 1.0

1.41.2

VSD, Body Diode Forward Voltage (V)

Figure 5. Gate Threshold Variation

with Temperature

Figure 6. Body Diode Forward Voltage

Variation with Source Current

4

P-CHANNEL

10

8

6

-VGS=10,8V

CEM6659

10

-V

=6V

GS

-V

=5V

GS

8

6

25 C

4

-ID, Drain Current (A)

2

0

0 1 4 6532

-VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

1200

C

1000

800

600

400

C, Capacitance (pF)

200

C

rss

0

0 6 12 18 24 30

iss

C

oss

-VDS, Drain-to-Source Voltage (V)

Figure 3. Capacitance

1.3 VDS=V

GS

ID=-250µA

1.2

1.1

1.0

0.9

0.8

VTH, Normalized

0.7

Gate-Source Threshold Voltage

0.6

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature( C)

4

-ID, Drain Current (A)

2

TJ=125 C

0

0 2 4 61 3 5

-VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

2.2 ID=-3.1A

VGS=-10V

1.9

1.6

1.3

1.0

RDS(ON), Normalized

0.7

RDS(ON), On-Resistance(Ohms)

0.4

-100 -50 0 50 100 150 200

TJ, Junction Temperature( C)

Figure 4. On-Resistance Variation

with Temperature

V

=0

V

GS

1

10

0

10

-IS, Source-drain current (A)

-1

10

0.4 0.6 0.8 1.0

-VSD, Body Diode Forward Voltage (V)

-55 C

1.41.2

Figure 5. Gate Threshold Variation

with Temperature

Figure 6. Body Diode Forward Voltage

Variation with Source Current

5

CEM6659

N-CHANNEL

10

VDS=30V ID=4.1A

8

6

4

2

VGS, Gate to Source Voltage (V)

0

0 3 6 12 15

P-CHANNEL

10

VDS=-30V ID=-3.1A

8

6

4

2

-VGS, Gate to Source Voltage (V)

0

0 3 6 9 12

9

Qg, Total Gate Charge (nC)

Figure 13. Gate Charge

Qg, Total Gate Charge (nC)

2

10

R

Limit

DS(ON)

1

10

0

10

-1

10

ID, Drain Current (A)

-2

10

TA=25 C TJ=150 C

Single Pulse

-2

10

-1

10

DC

0

10

100ms

1s

10ms

10

1ms

5

1

2

10

VDS, Drain-Source Voltage (V)

Figure 14. Maximum Safe

Operating Area

2

10

1

R

Limit

DS(ON)

10

0

10

-1

10

-ID, Drain Current (A)

-2

10

TA=25 C TJ=150 C

Single Pulse

-2

10

-1

10

0

10

DC

100ms

1s

10ms

10

1ms

1

2

10

-VDS, Drain-Source Voltage (V)

Figure 15. Gate Charge

Figure 16. Maximum Safe

Operating Area

6

CEM6659

DD

V

on

t

d(off)

t

r

t

90%

10% 10%

INVERTED

50% 50%

V

d(on)

t

OUT

IN

10%

R

IN

V

GS

GEN

R

G

L

D

OUT

V

S

PULSE WIDTH

90%

t

off

f

t

90%

5

Figure 17. Switching Test Circuit

0

10

D=0.5

0.2

-1

10

0.1

0.05

r(t),Normalized Effective

0.02

Transient Thermal Impedance

-2

10

-4

10

-3

10

Figure 19. Normalized Thermal Transient Impedance Curve

Single Pulse

-2

10

Square Wave Pulse Duration (sec)

Figure 18. Switching Waveforms

PDM

-1

10

0

10

t1

t2

1. RθJA (t)=r (t) * RθJA

2. RθJA=See Datasheet

3. TJM-TA = P* RθJA (t)

4. Duty Cycle, D=t1/t2

1

10

2

10

7