Page 1
CEM6188
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 7.3A, R
R
Super high dense cell design for extremely low R
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
ABSOLUTE MAXIMUM RATINGS T
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation
Operating and Store Temperature Range TJ,Tstg -55 to 150
= 26mΩ @VGS = 10V.
DS(ON)
= 35mΩ @VGS = 4.5V.
DS(ON)
Parameter
a
SO-8
.
DS(ON)
1
= 25 C unless otherwise noted
A
Symbol Limit
V
DS
V
GS
I
D
I
DM
P
D
D1 D1 D2 D2
8
1
S1 G1 S2 G2
60
±20
7.3
29.2
2
PRELIMINARY
7
6 5
2
3 4
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter Symbol Limit Units
Thermal Resistance, Junction-to-Ambient
This is preliminary information on a new product in development now .
Details are subject to change without notice .
b
1
C/W62.5RθJA
Rev 1. 2011.Mar
http://www.cetsemi.com
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CEM6188
Electrical Characteristics T
= 25 C unless otherwise noted
A
Parameter Symbol Min Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
c
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics
d
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
d
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
BV
I
IGSSR
V
GS(th)
R
DS(on)
C
C
C
t
d(on)
t
d(off)
Q
Q
DSS
I
DSS
GSSF
iss
oss
rss
t
r
t
f
Q
g
gs
gd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
b
c
I
S
V
SD
Test Condition
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = 250µA
VGS = 10V, ID =6A
VGS = 4.5V, ID =4A
VDS = 25V, VGS = 0V,
f = 1.0 MHz
VDD = 30V, ID = 6A,
VGS = 10V, R
GEN
= 4.7Ω
VDS = 48V, ID = 6A,
VGS = 10V
VGS = 0V, IS = 1.5A
60
1
Typ Max
100
-100
2620
3529 mΩ
1120
125
75
15
38
10
24
30
5
10
76
20
31
6
6
1.5
1.2
V
1
µA
nA
nA
3
V
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
2
Page 3
CEM6188
24
20
16
12
ID, Drain Current (A)
VGS=10,8,7V
8
4
0
0.0 0.5 1.0 2.01.5
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
1200
1000
800
600
400
C, Capacitance (pF)
200
0
0 5 10 15 20 25
C
iss
C
oss
C
rss
VDS, Drain-to-Source Voltage (V)
V
GS
V
GS
=4V
=3V
2.5 3.0
15
12
9
6
ID, Drain Current (A)
3
0
TJ=125 C
2
25 C
-55 C
4
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2
ID=6A
VGS=10V
1.9
1.6
1.3
1.0
RDS(ON), Normalized
0.7
RDS(ON), On-Resistance(Ohms)
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
6 80.0 10
Figure 3. Capacitance
1.3
VDS=V
GS
ID=250µA
1.2
1.1
1.0
0.9
0.8
VTH, Normalized
0.7
Gate-Source Threshold Voltage
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
Figure 4. On-Resistance Variation
with Temperature
V
=0
V
GS
1
10
0
10
IS, Source-drain current (A)
-1
10
0.4 0.6 0.8 1.0 1.41.2
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
Page 4
CEM6188
10
VDS=48V
ID=6A
8
6
4
2
VGS, Gate to Source Voltage (V)
0
0 5 10 15 2520
Qg, Total Gate Charge (nC)
Figure 7. Gate Charge
IN
V
V
GS
GEN
R
G
2
10
R
Limit
DS(ON)
1
ID, Drain Current (A)
10
0
10
-1
10
-2
10
TA=25 C
TJ=150 C
Single Pulse
-2
10
-1
10
10
10ms
100ms
1s
DC
0
1
10
2
10
VDS, Drain-Source Voltage (V)
Figure 8. Maximum Safe
Operating Area
DD
V
on
t
d(off)
t
r
t
90%
10% 10%
INVERTED
50% 50%
V
V
d(on)
t
OUT
IN
10%
R
L
D
OUT
V
S
90%
t
off
f
t
90%
PULSE WIDTH
Figure 9. Switching Test Circuit
0
10
D=0.5
0.2
-1
10
0.1
0.05
r(t),Normalized Effective
0.02
Transient Thermal Impedance
-2
10
-4
10
-3
10
Figure 11. Normalized Thermal Transient Impedance Curve
Single Pulse
-2
10
Square Wave Pulse Duration (sec)
Figure 10. Switching Waveforms
PDM
t1
t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
-1
10
0
10
1
10
2
10
4
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