Datasheet cem4282 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

CEM4282

40V, 6.6A, R
R
Super high dense cell design for extremely low R

High power and current handing capability.
Lead free product is acquired.
Surface mount Package.

ABSOLUTE MAXIMUM RATINGS T

Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed

Maximum Power Dissipation

Operating and Store Temperature Range TJ,Tstg -55 to 150

= 36mΩ @VGS = 10V.

DS(ON)

= 48mΩ @VGS = 4.5V.

DS(ON)

Parameter

a

SO-8

.

DS(ON)

1

= 25 C unless otherwise noted

A

Symbol Limit

V

DS

V

GS

I

D

I

DM

P

D

D D D D

8 7 6 5

1 2 3 4

S S S G

40

±20

6.6
26

2.5

5

Units

V
V
A

A
W
C

Thermal Characteristics

Parameter Symbol Limit Units

Thermal Resistance, Junction-to-Ambient

Details are subject to change without notice .

b

Rev 1. 2006.Sep

http://www.cetsemi.com

1

C/W50RθJA

CEM4282

Electrical Characteristics T

= 25 C unless otherwise noted

c

Parameter Symbol Min Units

Off Characteristics

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse

BV

I

DSS

I

GSSF

IGSSR

DSS

On Characteristics

Gate Threshold Voltage
Static Drain-Source
On-Resistance

Dynamic Characteristics

c

Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Switching Characteristics

c

Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

V

GS(th)

R

DS(on)

C
C
C

t

d(on)

t

d(off)

Q
Q

g

FS
iss
oss
rss

t

r

t

f

Q

g
gs
gd

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.

b

I

S

V

SD

Test Condition

VGS = 0V, ID = 250µA

Typ Max

40
VDS = 40V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V

VGS = VDS, ID = 250µA
VGS = 10V, ID = 6.6A

1 3

30

VGS = 4.5V, ID = 5.3A 38

VDS = 5V, ID = 6.6A
VDS = 15V, VGS = 0V,

f = 1.0 MHz

675
105

60

10
VDD = 20V, ID = 6A,
VGS = 10V, R

VDS = 20V, ID = 6A,
VGS = 4.5V

GEN

= 3Ω

25

6.4

1.7

2.8

VGS = 0V, IS = 1.9A

V

1

µA

100

-100

nA
nA

6

V

36

mΩ
mΩ

48

5

S
pF
pF
pF

20

2

50

2

8.5

ns

5

ns
ns

5

ns
nC
nC
nC

6.6

1.3

A
V

2

CEM4282

20

VGS=10,8,6V

16

12

8

ID, Drain Current (A)

4

0

0 1

2

VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

900

C

750

600

450

300

C, Capacitance (pF)

150

0

0 5 10 15 20 25

iss

C

oss

C

rss

VDS, Drain-to-Source Voltage (V)

15

25 C

12

V

=4V

GS

V

=3V

GS

3

4

9

6

ID, Drain Current (A)

3

0

TJ=125 C

1 2 4 50 6

-55 C

VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

2.2
ID=6.6A

VGS=10V

1.9

1.6

1.3

1.0

RDS(ON), Normalized

0.7

RDS(ON), On-Resistance(Ohms)

0.4

-100 -50 0 50 100 150 200

TJ, Junction Temperature( C)

Figure 3. Capacitance

1.3
VDS=V

GS

ID=250µA

1.2

1.1

1.0

0.9

0.8

VTH, Normalized

0.7

Gate-Source Threshold Voltage

0.6

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variation

with Temperature

Figure 4. On-Resistance Variation

with Temperature

V

=0

V

GS

1

10

0

10

IS, Source-drain current (A)

-1

10

0.4 0.6 0.8 1.0

1.41.2

VSD, Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

3

5

VDS=20V
ID=6A

4

3

2

1

VGS, Gate to Source Voltage (V)

0

0 1.5 6.0 7.53.0 4.5

Qg, Total Gate Charge (nC)

CEM4282

2

10

R

Limit

DS(ON)

1

10

0

10

-1

10

ID, Drain Current (A)

-2

10

TA=25 C
TJ=150 C

Single Pulse

-2

10

-1

10

DC

0

10

100ms

1s

10ms

10

1ms

1

2

10

VDS, Drain-Source Voltage (V)

4

Figure 7. Gate Charge

IN

V

D

V

GS

GEN

R

G

S

Figure 9. Switching Test Circuit

0

10

D=0.5

0.2

-1

0.1

10

0.05

0.02

0.01

-2

10

r(t),Normalized Effective

Single Pulse

Transient Thermal Impedance

-3

10

-4

10

-3

10

DD

V

R

L

OUT

V

-2

10

Square Wave Pulse Duration (sec)

Figure 8. Maximum Safe

on

t

r

t

90%

10% 10%

INVERTED

50% 50%

V

V

d(on)

t

OUT

IN

10%

PULSE WIDTH

Figure 10. Switching Waveforms

PDM

-1

10

0

10

Operating Area

t

off

d(off)

t

90%

90%

t1

t2

1. RθJA (t)=r (t) * RθJA

2. RθJA=See Datasheet

3. TJM-TA = P* RθJA (t)

4. Duty Cycle, D=t1/t2

1

10

f

t

2

10

Figure 11. Normalized Thermal Transient Impedance Curve

4