Datasheet cem4279 Datasheet

CEM4279

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES

40V, 6.1A, R

R

-40V, -4.3A, R

R

Super high dense cell design for extremely low R

High power and current handing capability.

Lead free product is acquired.

Surface mount Package.

ABSOLUTE MAXIMUM RATINGS T

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed

Maximum Power Dissipation

Operating and Store Temperature Range TJ,Tstg -55 to 150

= 32mΩ @VGS = 10V.

DS(ON)

= 46mΩ @VGS = 4.5V.

DS(ON)

= 66mΩ @VGS = -10V.

DS(ON)

= 105mΩ @VGS = -4.5V.

DS(ON)

Parameter

a

SO-8

.

DS(ON)

1

= 25 C unless otherwise noted

A

Symbol

V

DS

V

GS

I

D

I

DM

P

D

D1 D1 D2 D2

8 7 6 5

1 2 3 4

S1 G1 S2 G2

N-Channel

40

±20

6.1

24

P-Channel

2.0

-40

±20

-4.3

-17

5

Units

V

V

A

A

W

C

Thermal Characteristics

Parameter Symbol Limit Units

Thermal Resistance, Junction-to-Ambient

Details are subject to change without notice .

b

Rev 2. 2007.Jan

http://www.cetsemi.com

1

C/W62.5RθJA

CEM4279

N-Channel Electrical Characteristics T

Parameter Symbol Min Units

Off Characteristics

Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse

On Characteristics

c

Gate Threshold Voltage
Static Drain-Source
On-Resistance

Dynamic Characteristics

d

Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Switching Characteristics

d

Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.


BV

DSS

I

DSS

I

GSSF

IGSSR

V

GS(th)

R

DS(on)

g

FS

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

b

c

I

S

V

SD

= 25 C unless otherwise noted

A

Test Condition

VGS = 0V, ID = 250µA
VDS = 40V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V

VGS = VDS, ID = 250µA
VGS = 10V, ID = 6.1A
VGS = 4.5V, ID = 4.9A

VDS = 5V, ID = 6.1A
VDS = 20V, VGS = 0V,

f = 1.0 MHz

VDD = 20V, ID = 6.1A,
VGS = 10V, R

GEN

=3Ω

VDS = 20V, ID = 6.1A,
VGS = 4.5V

VGS = 0V, IS = 1.0A

Typ Max

40

1 3

25
35

3

1050

155

95

14
10
17
18

10.1

3.5

4.0

1

100

-100

32
46 mΩ

30
20
35
35
13

6.1

1.0

V

µA

nA
nA

V

mΩ

S
pF
pF
pF

ns
ns
ns

ns
nC
nC
nC

A
V

2

CEM4279

P-Channel Electrical Characteristics T

Parameter Symbol Min Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

On Characteristics

c

Gate Threshold Voltage

Static Drain-Source

On-Resistance

Dynamic Characteristics

d

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics

d

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.


BV

DSS

I

DSS

I

GSSF

IGSSR

V

GS(th)

R

DS(on)

g

FS

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

b

c

I

S

V

SD

= 25 C unless otherwise noted

A

Test Condition

VGS = 0V, ID = -250µA

VDS = -40V, VGS = 0V

VGS = 20V, VDS = 0V

VGS = -20V, VDS = 0V

VGS = VDS, ID = -250µA

VGS = -10V, ID = -4.3A

VGS = -4.5V, ID = -3.7A

VDS = -5V, ID = -4.3A

VDS = -20V, VGS = 0V,
f = 1.0 MHz

VDD = -15V, ID = -1A,
VGS = -10V, R

GEN

= 6Ω

VDS = -20V, ID = -4.3A,
VGS = -4.5V

VGS = 0V, IS = -1.3A

Typ Max

-40

-1 -3

7

705

125

75

13

3

31

5

5.6

2.1

2.3

-1

µA

100

-100

nA

nA

6655

mΩ

10585 mΩ

pF

pF

pF

26

62

10

7.4

ns

6

ns

ns

ns

nC

nC

nC

-4.3

-1.2

V

5

V

S

A

V

3

N-CHANNEL

20

16

VGS=10,8,6,5V

VGS=4V

CEM4279

15

12

12

8

ID, Drain Current (A)

4

0

0 1

2

VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

1500

1250

1000

750

500

C, Capacitance (pF)

250

C

rss

0

0 5 10 15 20 25

C

iss

C

oss

VDS, Drain-to-Source Voltage (V)

9

6

V

=3V

GS

3

4

ID, Drain Current (A)

3

TJ=125 C

0

0 2 51 43

25 C

-55 C

5

VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

2.2
ID=6.1A

VGS=10V

1.9

1.6

1.3

1.0

RDS(ON), Normalized

0.7

RDS(ON), On-Resistance(Ohms)

0.4

-100 -50 0 50 100 150 200

TJ, Junction Temperature( C)

Figure 3. Capacitance

1.3
VDS=V

GS

ID=250µA

1.2

1.1

1.0

0.9

0.8

VTH, Normalized

0.7

Gate-Source Threshold Voltage

0.6

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variation

with Temperature

Figure 4. On-Resistance Variation

with Temperature

V

=0

V

GS

1

10

0

10

IS, Source-drain current (A)

-1

10

0.4 0.6 0.8 1.0

1.41.2

VSD, Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

4

P-CHANNEL

25

20

15

-VGS=10,8V

-V

GS

=5.0

CEM4279

10

8

V

6

10

-ID, Drain Current (A)

5

0

0 0.5 2 2.51.51

-VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

900

C

750

600

450

300

C, Capacitance (pF)

150

0

0 5 10 15 20 25

iss

C

oss

C

rss

-VDS, Drain-to-Source Voltage (V)

Figure 3. Capacitance

1.3
VDS=V

GS

ID=-250µA

1.2

1.1

1.0

0.9

0.8

VTH, Normalized

0.7

Gate-Source Threshold Voltage

0.6

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature( C)

-V

=4.0

V

GS

4

-ID, Drain Current (A)

2

TJ=125 C

0

0 2 51 43

25 C

-55 C

-VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

2.2
ID=-4.3A

VGS=-10V

1.9

1.6

1.3

1.0

RDS(ON), Normalized

0.7

RDS(ON), On-Resistance(Ohms)

0.4

-100 -50 0 50 100 150 200

TJ, Junction Temperature( C)

Figure 4. On-Resistance Variation

with Temperature

V

=0

V

GS

1

10

0

10

-IS, Source-drain current (A)

-1

10

0.4 0.6 0.8 1.0

1.41.2

-VSD, Body Diode Forward Voltage (V)

Figure 5. Gate Threshold Variation

with Temperature

Figure 6. Body Diode Forward Voltage

Variation with Source Current

5

CEM4279

N-CHANNEL

5

VDS=20V

ID=6.1A

4

3

2

1

VGS, Gate to Source Voltage (V)

0

0 2 4 8 12

P-CHANNEL

5

VDS=-20V
ID=-4.3A

4

3

2

1

-VGS, Gate to Source Voltage (V)

0

0 1.2 4.8 62.4 3.6

6 10

Qg, Total Gate Charge (nC)

Figure 13. Gate Charge

Qg, Total Gate Charge (nC)

2

10

R

Limit

DS(ON)

DC

1s

10ms

100ms

1ms

5

1

10

2

10

1

10

0

10

-1

10

ID, Drain Current (A)

-2

10

TA=25 C
TJ=150 C

Single Pulse

-2

10

-1

10

0

10

VDS, Drain-Source Voltage (V)

Figure 14. Maximum Safe

DS(ON)

TA=25 C
TJ=150 C

Limit

10

Operating Area

1s

DC

-1

0

10

10ms

100ms

10

1ms

1

2

10

2

10

R

1

10

0

10

-1

10

-ID, Drain Current (A)

Single Pulse

-2

10

-2

10

-VDS, Drain-Source Voltage (V)

Figure 15. Gate Charge

Figure 16. Maximum Safe

Operating Area

6

CEM4279

DD

V

on

t

d(off)

t

r

t

90%

10% 10%

INVERTED

50% 50%

V

V

d(on)

t

OUT

IN

10%

R

IN

V

V

GS

GEN

R

G

L

D

OUT

V

S

PULSE WIDTH

90%

t

off

f

t

90%

5

Figure 17. Switching Test Circuit

0

10

D=0.5

0.2

-1

10

0.1

0.05

r(t),Normalized Effective

0.02

Transient Thermal Impedance

-2

10

-4

10

-3

10

Figure 19. Normalized Thermal Transient Impedance Curve

Single Pulse

-2

10

Square Wave Pulse Duration (sec)

Figure 18. Switching Waveforms

PDM

-1

10

0

10

t1

t2

1. RθJA (t)=r (t) * RθJA

2. RθJA=See Datasheet

3. TJM-TA = P* RθJA (t)

4. Duty Cycle, D=t1/t2

1

10

2

10

7