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cem4269
Datasheet
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Datasheet cem4269 Datasheet

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Page 1
CEM4269
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
40V, 6.1A, R
-40V, -5.2A, R
R
Super high dense cell design for extremely low R
= 32mΩ @VGS = 10V.
DS(ON)
= 46mΩ @VGS = 4.5V.
DS(ON)
= 43mΩ @VGS = 10V.
DS(ON)
= 65mΩ @VGS = 4.5V.
DS(ON)
DS(ON)
.
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
SO-8
ABSOLUTE MAXIMUM RATINGS T
= 25 C unless otherwise noted
A
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
Maximum Power Dissipation
TA=25 C
TA=70 C 4.9 -4.2
TA=25 C
TA=70 C
Operating and Store Temperature Range TJ,T
1
Symbol Channel 1
V
DS
V
GS
I
D
I
DM
P
D
stg
40
±20
6.1
20
D1 D1 D2 D2
8
7
6 5
1
2
S1 G1 S2 G2
3 4
Channel 2
Units
-40
±20
-5.2
-20
2.0
1.28
-55 to 150 C
V
V
A
W
Thermal Characteristics
Parameter Symbol Limit Units
Thermal Resistance, Junction-to-Ambient
Specification and data are subject to change without notice .
b
C/W62.5RθJA
Rev 2. 2010.Aug
http://www.cetsemi.com
1
Page 2
CEM4269
N-Channel Electrical Characteristics T
Parameter Symbol Min Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
c
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics
d
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
d
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 
BV
DSS
I
DSS
I
GSSF
IGSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
b
c
I
S
V
SD
= 25 C unless otherwise noted
A
Test Condition
VGS = 0V, ID = 250µA
VDS = 40V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = 250µA
VGS = 10V, ID = 6A
VGS = 4.5V, ID = 5A
VDS = 5V, ID = 6A
VDS = 20V, VGS = 0V, f = 1.0 MHz
VDD = 20V, ID = 6A, VGS = 10V, R
GEN
=3Ω
VDS = 20V, ID = 6A, VGS = 10V
VGS = 0V, IS = 1.0A
Typ Max
40
1 3
3
1050
155
95
14
10
17
18
20.5
3.5
4.0
1
100
-100
32
46 mΩ
30
20
35
35
27
1.0
1.0
V
µA
nA
nA
V
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
2
Page 3
CEM4269
P-Channel Electrical Characteristics T
Parameter Symbol Min Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
c
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics
d
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
d
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 
BV
DSS
I
DSS
I
GSSF
IGSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
b
c
I
S
V
SD
= 25 C unless otherwise noted
A
Test Condition
VGS = 0V, ID = -250µA
VDS = -40V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = -250µA
VGS = -10V, ID = -5A
VGS = -4.5V, ID = -2A
VDS = -5V, ID = -4.8A
VDS = -20V, VGS = 0V, f = 1.0 MHz
VDD = -20V, ID = -5A, VGS = -10V, R
GEN
= 3Ω
VDS = -20V, ID = -5A, VGS = -10V
VGS = 0V, IS = -1.0A
Typ Max
-40
-1 -3
3
1125
150
100
12
5
33
4
20
2.5
3.5
-1
100
-100
43
65 mΩ
24
30
66
8
26
-1.0
-1.0
V
µA
nA
nA
V
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
3
Page 4
CEM4269
N-CHANNEL
30
24
18
12
ID, Drain Current (A)
6
0
0 1 432
1500
1250
1000
750
500
C, Capacitance (pF)
250
C
0
0 5 10 15 20 25
VGS=10,5V
VGS=4.5V
VGS=4.0V
V
=3.5V
GS
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
C
iss
C
oss
rss
VDS, Drain-to-Source Voltage (V)
20
16
12
8
ID, Drain Current (A)
4
TJ=125 C
0
25 C
2.5 3.02.0 4.5
3.5 4.0
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2 ID=6A
VGS=10V
1.9
1.6
1.3
1.0
RDS(ON), Normalized
0.7
RDS(ON), On-Resistance(Ohms)
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
-55 C
Figure 3. Capacitance
1.3 VDS=V
GS
ID=250µA
1.2
1.1
1.0
0.9
0.8
VTH, Normalized
0.7
Gate-Source Threshold Voltage
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
Figure 4. On-Resistance Variation
with Temperature
V
=0
V
GS
1
10
0
10
IS, Source-drain current (A)
-1
10
0.4 0.6 0.8 1.0
1.41.2
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
4
Page 5
CEM4269
P-CHANNEL
30
24
18
12
-ID, Drain Current (A)
6
0
0 1 2 43 5
1500
1250
1000
750
500
C, Capacitance (pF)
250
0
0 5 10 15 20 25
-VGS=4.5V-VGS=10,6,5V
-VGS=4.0V
-VGS=3.5V
-VGS=3.0V
-VDS, Drain-to-Source Voltage (V)
Figure 7. Output Characteristics
C
iss
C
oss
C
rss
-VDS, Drain-to-Source Voltage (V)
25
20
15
10
-ID, Drain Current (A)
5
TJ=125 C
0
25 C
2 3 41 5
-VGS, Gate-to-Source Voltage (V)
Figure 8. Transfer Characteristics
2.2 ID=-5A
VGS=-10V
1.9
1.6
1.3
1.0
RDS(ON), Normalized
0.7
RDS(ON), On-Resistance(Ohms)
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
-55 C
Figure 9. Capacitance
1.3 VDS=V
GS
ID=-250µA
1.2
1.1
1.0
0.9
0.8
VTH, Normalized
0.7
Gate-Source Threshold Voltage
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 11. Gate Threshold Variation
with Temperature
Figure 10. On-Resistance Variation
with Temperature
V
=0
V
GS
1
10
0
10
-IS, Source-drain current (A)
-1
10
0.4 0.6 0.8 1.0
1.41.2
-VSD, Body Diode Forward Voltage (V)
Figure 12. Body Diode Forward Voltage
Variation with Source Current
5
Page 6
CEM4269
N-CHANNEL
10
VDS=20V
ID=6A
8
6
4
2
VGS, Gate to Source Voltage (V)
0
0 4 8 16 24
P-CHANNEL
10
VDS=-20V
ID=-5A
8
6
4
2
-VGS, Gate to Source Voltage (V)
0
0 4 8 16 20
12 20
Qg, Total Gate Charge (nC)
Figure 13. Gate Charge
12
Qg, Total Gate Charge (nC)
2
10
R
Limit
DS(ON)
DC
0
100ms
1s
1ms
10ms
10
1
2
10
1
10
0
10
-1
10
ID, Drain Current (A)
-2
10
TA=25 C TJ=150 C
Single Pulse
-2
10
-1
10
10
VDS, Drain-Source Voltage (V)
Figure 14. Maximum Safe
DS(ON)
TA=25 C TJ=150 C
Limit
10
Operating Area
100ms
DC
-1
0
10
10ms
10
1ms
1
2
10
2
10
R
1
10
0
10
-1
10
-ID, Drain Current (A)
Single Pulse
-2
10
-2
10
-VDS, Drain-Source Voltage (V)
Figure 15. Gate Charge
Figure 16. Maximum Safe
Operating Area
6
Page 7
CEM4269
DD
V
on
t
d(off)
t
r
t
90%
10% 10%
INVERTED
50% 50%
V
V
d(on)
t
OUT
IN
10%
R
IN
V
V
GS
GEN
R
G
L
D
OUT
V
S
PULSE WIDTH
90%
t
off
f
t
90%
Figure 17. Switching Test Circuit
0
10
D=0.5
0.2
-1
0.1
10
0.05
0.02
0.01
-2
10
r(t),Normalized Effective
Single Pulse
Transient Thermal Impedance
-3
10
-4
10
-3
10
Figure 19. Normalized Thermal Transient Impedance Curve
Figure 18. Switching Waveforms
-2
10
-1
10
Square Wave Pulse Duration (sec)
PDM
t1
t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
0
10
1
10
2
10
7
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