Page 1
CEM3317
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -6.2A, R
R
-30V, -4.9A, R
R
Super high dense cell design for extremely low R
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
ABSOLUTE MAXIMUM RATINGS T
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation
Operating and Store Temperature Range TJ,Tstg -55 to 150
= 33mΩ @VGS = -10V.
DS(ON)
= 52mΩ @VGS = -4.5V.
DS(ON)
= 52mΩ @VGS = -10V.
DS(ON)
= 85mΩ @VGS = -4.5V.
DS(ON)
Parameter
a
SO-8
.
DS(ON)
1
= 25 C unless otherwise noted
A
Symbol Channel 1
V
DS
V
GS
I
D
I
DM
P
D
D1 D1 D2 D2
8
1
S1 G1 S2 G2
-30
±20
-6.2
-25
7
2
Channel 2
2.0
6 5
3 4
-30
±20
-4.9
-20
PRELIMINARY
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter Symbol Limit Units
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice .
b
C/W62.5RθJA
Rev 1. 2006.SepThis is preliminary information on a new product in development now .
http://www.cetsemi.com
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CEM3317
P-Channel(Q1) Electrical Characteristics T
Parameter Symbol Min Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics
c
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
c
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
R
BV
C
C
C
t
d(on)
t
d(off)
Q
Q
DSS
I
DSS
I
GSSF
IGSSR
GS(th)
DS(on)
g
FS
iss
oss
rss
t
r
t
f
Q
g
gs
gd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
b
I
S
V
SD
Test Condition
VGS = 0V, ID = -250µA
VDS = -30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = -250µA
VGS = -10V, ID = -6.2A
VGS = -4.5V, ID = -4A
VDS = -10V, ID = -6.2A
VDS = -15V, VGS = 0V,
f = 1.0 MHz
VDD = -15V, ID = -1A,
VGS = -10V, R
VDS = -15V, ID = -6.2A,
VGS = -10V
VGS = 0V, IS = -1A
= 25 C unless otherwise noted
A
Typ Max
-30
-1 -3
1150
250
150
13
= 6Ω
GEN
58
22
19
4.0
2.5
5
6
-1
100
-100
3327
5240 mΩ
25
15
115
45
25
-6.2
-1.2
V
µA
nA
nA
V
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
6
2
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CEM3317
P-Channel(Q2) Electrical Characteristics T
Parameter Symbol Min Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
c
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics
d
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
d
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
BV
I
IGSSR
V
GS(th)
R
DS(on)
g
C
C
C
t
d(on)
t
d(off)
Q
Q
DSS
I
DSS
GSSF
FS
iss
oss
rss
t
r
t
f
Q
g
gs
gd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
b
c
I
S
V
SD
Test Condition
VGS = 0V, ID = -250µA
VDS = -30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = -250µA
VGS = -10V, ID = -4.9A
VGS = -4.5V, ID = -3.6A
VDS = -15V, ID = -4.9A
VDS = -15V, VGS = 0V,
f = 1.0 MHz
VDD = -15V, ID = -1A,
VGS = -10V, R
VDS = -15V, ID = -4.9A,
VGS = -10V
VGS = 0V, IS = -4.9A
= 25 C unless otherwise noted
A
Typ Max
-30
-1 -3
5
845
155
= 6Ω
GEN
13.8
95
11
59
23
1.8
2.2
8
4
-1
100
-100
5242
mΩ
8565 mΩ
22
8
118
46
18.3
-4.9
-1.2
V
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
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CEM3317
CHANNEL 1
25
20
15
10
-ID, Drain Current (A)
5
0
0 1 4 6
1500
1250
1000
750
500
C, Capacitance (pF)
250
0
0 5 10 15 20 25
-VGS=10,8V
-V
=6V
GS
-V
=5V
GS
-V
=4V
GS
-V
=3V
GS
532
-VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
C
iss
C
oss
C
rss
-VDS, Drain-to-Source Voltage (V)
10
8
6
4
-ID, Drain Current (A)
2
TJ=125 C
0
0 2 4 61 3 5
25 C
-VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2
ID=-6.2A
VGS=-10V
1.9
1.6
1.3
1.0
RDS(ON), Normalized
0.7
RDS(ON), On-Resistance(Ohms)
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
-55 C
Figure 3. Capacitance
1.3
VDS=V
GS
ID=-250µA
1.2
1.1
1.0
0.9
0.8
VTH, Normalized
0.7
Gate-Source Threshold Voltage
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
Figure 4. On-Resistance Variation
with Temperature
V
=0
V
GS
1
10
0
10
-IS, Source-drain current (A)
-1
10
0.4 0.6 0.8 1.0
1.41.2
-VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
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CEM3317
CHANNEL 2
20
16
12
8
-ID, Drain Current (A)
4
0
0 0.5 2 2.51.51
1200
1000
800
6
0
0
4
0
0
C, Capacitance (pF)
2
0
0
0
0
-VGS=10,8,6,4,V
-V
=3V
GS
-VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
C
iss
C
o
s
s
C
rss
5
1
0
1
5
2
0
-VDS, Drain-to-Source Voltage (V)
10
25 C
8
6
4
-ID, Drain Current (A)
TJ=125 C
2
0
0.0 1.0 2.0 3.00.5 1.5 2.5
-55 C
5
-VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2
ID=-4.9A
VGS=-10V
1.9
1.6
1.3
1.0
RDS(ON), Normalized
0.7
RDS(ON), On-Resistance(Ohms)
0.4
2
5
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 3. Capacitance
1.3
VDS=V
GS
ID=-250µA
1.2
1.1
1.0
0.9
0.8
VTH, Normalized
0.7
Gate-Source Threshold Voltage
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
Figure 4. On-Resistance Variation
with Temperature
V
=0
V
GS
1
10
0
10
-IS, Source-drain current (A)
-1
10
0.4 0.6 0.8 1.0
1.41.2
-VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
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CEM3317
CHANNEL 1
10
VDS=-15V
ID=-6.2A
8
6
4
2
-VGS, Gate to Source Voltage (V)
0
0 5 10 15 20
CHANNEL 2
10
VDS=-15V
ID=-4.9A
8
6
4
2
-VGS, Gate to Source Voltage (V)
0
0 3 6 9 12
Qg, Total Gate Charge (nC)
Figure 7. Gate Charge
Qg, Total Gate Charge (nC)
2
10
R
Limit
DS(ON)
1
10
0
10
-1
10
-ID, Drain Current (A)
-2
10
TA=25 C
TJ=150 C
Single Pulse
-2
10
-1
10
10
1ms
10ms
100ms
1s
DC
0
1
10
2
10
-VDS, Drain-Source Voltage (V)
Figure 8. Maximum Safe
Operating Area
R
Limit
DS(ON)
1
10
0
10
-1
10
-ID, Drain Current (A)
TA=25 C
TJ=150 C
Single Pulse
-1
10
0
10
DC
100ms
1s
10ms
1
10
-VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
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CEM3317
DD
V
on
t
d(off)
t
r
R
IN
V
V
GS
GEN
R
G
L
D
OUT
V
S
t
V
V
d(on)
OUT
IN
10%
t
90%
10% 10%
INVERTED
50% 50%
PULSE WIDTH
90%
t
off
f
t
90%
Figure 17. Switching Test Circuit
0
10
D=0.5
0.2
-1
0.1
10
0.05
0.02
0.01
-2
10
r(t),Normalized Effective
Single Pulse
Transient Thermal Impedance
-3
10
-4
10
-3
10
Figure 19. Normalized Thermal Transient Impedance Curve
Figure 18. Switching Waveforms
-2
10
-1
10
Square Wave Pulse Duration (sec)
PDM
t1
t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
0
10
1
10
2
10
7
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