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cem3259
Datasheet
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Datasheet cem3259 Datasheet

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Page 1
CEM3259
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
30V, 7.6A, R
R
-30V, -5.9A, R
R
Super high dense cell design for extremely low R
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
ABSOLUTE MAXIMUM RATINGS T
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation
Operating and Store Temperature Range TJ,Tstg -55 to 150
= 22mΩ @VGS = 10V.
DS(ON)
= 33mΩ @VGS = 4.5V.
DS(ON)
= 36mΩ @VGS = -10V.
DS(ON)
= 52mΩ @VGS = -4.5V.
DS(ON)
Parameter
a
SO-8
.
DS(ON)
1
= 25 C unless otherwise noted
A
Symbol
V
DS
V
GS
I
D
I
DM
P
D
D1 D1 D2 D2
8 7 6 5
1 2 3 4
S1 G1 S2 G2
N-Channel
30
±20
7.6
30
P-Channel
2.0
-30
±20
-5.9
25
5
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter Symbol Limit Units
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice .
b
Rev 4. 2010.Apr
http://www.cetsemi.com
1
C/W62.5RθJA
Page 2
CEM3259
N-Channel Electrical Characteristics T
Parameter Symbol Min Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
c
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics
d
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
d
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 
BV
DSS
I
DSS
I
GSSF
IGSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
b
c
I
S
V
SD
= 25 C unless otherwise noted
A
Test Condition
VGS = 0V, ID = 250µA
VDS = 30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = 250µA
VGS = 10V, ID = 7.6A
VGS = 4.5V, ID = 6.1A
VDS = 15V, ID = 7.6A
VDS = 15V, VGS = 0V, f = 1.0 MHz
VDD = 15V, ID = 7A, VGS = 10V, R
GEN
= 6Ω
VDS = 15V, ID = 7A, VGS = 10V
VGS = 0V, IS = 1.6A
Typ Max
30
1 3
5
590
125
95
10
4
25
4
13
2
3.5
1
100
-100
2217
3327 mΩ
20
8
50
8
17
1.6
1.2
V
µA
nA
nA
V
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
2
Page 3
CEM3259
P-Channel Electrical Characteristics T
Parameter Symbol Min Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics
c
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
c
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing.
BV
DSS
I
DSS
I
GSSF
IGSSR
V
GS(th)
R
DS(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
b
S
V
SD
= 25 C unless otherwise noted
A
Test Condition
VGS = 0V, ID = -250µA
VDS = -30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = -250µA
VGS = -10V, ID = -5.9A
VGS = -4.5V, ID = -4.7A
VDS = -10V, ID = -5.9A
VDS = -15V, VGS = 0V, f = 1.0 MHz
VDD = -15V, ID = -1A, VGS = -10V, R
GEN
= 6Ω
VDS = -15V, ID = -5.3A, VGS = -10V
VGS = 0V, IS = -1.6A
Typ Max
-30
-100
-1 -3
9
1125
150
100
12.5
5
34
4
20
2.5
5.5
-1
100
3627
mΩ
5237 mΩ
25
10
68
8
26
-1.6
-1.2
V
µA
nA
nA
V
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
3
Page 4
N-CHANNEL
25
20
VGS=10,8,6,5V
VGS=4V
CEM3259
15
12
15
10
ID, Drain Current (A)
5
0
0 1
2
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
900
750
C
600
450
300
C, Capacitance (pF)
150
0
0 5 10 15 20 25
iss
C
oss
C
rss
VDS, Drain-to-Source Voltage (V)
9
6
V
=3V
GS
3
4
ID, Drain Current (A)
3
TJ=125 C
0
1 2
25 C
-55 C
3
4
5
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2 ID=7.6A
VGS=10V
1.9
1.6
1.3
1.0
RDS(ON), Normalized
0.7
RDS(ON), On-Resistance(Ohms)
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 3. Capacitance
1.3 VDS=V
GS
ID=250µA
1.2
1.1
1.0
0.9
0.8
VTH, Normalized
0.7
Gate-Source Threshold Voltage
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
Figure 4. On-Resistance Variation
with Temperature
V
=0
V
GS
1
10
0
10
IS, Source-drain current (A)
-1
10
0.4 0.6 0.8 1.0
1.41.2
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
4
Page 5
P-CHANNEL
30
24
18
-VGS=10,8,6V
CEM3259
10
8
-V
=4V
GS
6
12
-ID, Drain Current (A)
6
0
0 0.5 2 3
-VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
1500
C
1250
1000
750
500
C, Capacitance (pF)
250
C
rss
0
0 5 10 15 20 25
iss
C
oss
-VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=V
GS
ID=-250µA
1.2
1.1
1.0
0.9
0.8
VTH, Normalized
0.7
Gate-Source Threshold Voltage
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
4
-ID, Drain Current (A)
2
-V
=3V
GS
2.51.51
TJ=125 C
0
0 2 4 61 3 5
25 C
-55 C
-VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2 ID=-5.9A
VGS=-10V
1.9
1.6
1.3
1.0
RDS(ON), Normalized
0.7
RDS(ON), On-Resistance(Ohms)
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
V
=0
V
GS
1
10
0
10
-IS, Source-drain current (A)
-1
10
0.4 0.6 0.8 1.0
1.41.2
-VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
5
Page 6
CEM3259
N-CHANNEL
10
VDS=15V
ID=7A
8
6
4
2
VGS, Gate to Source Voltage (V)
0
0 4 8 12 16
P-CHANNEL
10
VDS=-15V
ID=-5.3A
8
6
4
2
-VGS, Gate to Source Voltage (V)
0
0 5 10 15 20
Qg, Total Gate Charge (nC)
Figure 13. Gate Charge
Qg, Total Gate Charge (nC)
2
10
R
Limit
DS(ON)
1
10
0
10
-1
10
ID, Drain Current (A)
-2
10
TA=25 C TJ=150 C
Single Pulse
-2
10
-1
10
10
DC
0
100ms
1s
1ms
10ms
10
1
2
10
VDS, Drain-Source Voltage (V)
Figure 14. Maximum Safe
Operating Area
2
10
R
Limit
DS(ON)
1
10
0
10
-1
10
-ID, Drain Current (A)
-2
10
TA=25 C TJ=150 C
Single Pulse
-2
10
-1
10
10
1ms
10ms
100ms
1s
DC
0
1
10
2
10
-VDS, Drain-Source Voltage (V)
Figure 15. Gate Charge
Figure 16. Maximum Safe
Operating Area
6
Page 7
CEM3259
DD
V
on
t
d(off)
t
r
t
90%
10% 10%
INVERTED
50% 50%
V
V
d(on)
t
OUT
IN
10%
R
IN
V
V
GS
GEN
R
G
L
D
OUT
V
S
PULSE WIDTH
90%
t
off
f
t
90%
Figure 17. Switching Test Circuit
0
10
D=0.5
0.2
-1
10
0.1
0.05
r(t),Normalized Effective
0.02
Transient Thermal Impedance
-2
10
-4
10
-3
10
Figure 19. Normalized Thermal Transient Impedance Curve
Single Pulse
-2
10
Square Wave Pulse Duration (sec)
Figure 18. Switching Waveforms
PDM
-1
10
0
10
t1
t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
1
10
2
10
7
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