Datasheet cem3252 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

CEM3252

30V, 7.5A, R

R

Super high dense cell design for extremely low R

High power and current handing capability.

Lead free product is acquired.

Surface mount Package.

ABSOLUTE MAXIMUM RATINGS T

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed

Maximum Power Dissipation

Operating and Store Temperature Range TJ,Tstg -55 to 150

= 28mΩ @VGS = 10V.

DS(ON)

= 40mΩ @VGS = 4.5V.

DS(ON)

Parameter

a

SO-8

.

DS(ON)

1

= 25 C unless otherwise noted

A

Symbol Limit

V

DS

V

GS

I

D

I

DM

P

D

D D D D

8 7 6 5

1 2 3 4

S S S G

30

±20

7.5

25

2.5

Units

V

V

A

A

W

C

Thermal Characteristics

Parameter Symbol Limit Units

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case C/W25RθJC

Details are subject to change without notice .

b

C/W50RθJA

Rev 3. 2011.Sep

http://www.cetsemi.com

1

CEM3252

Electrical Characteristics T

Parameter Symbol Min Units

= 25 C unless otherwise noted

A

Test Condition

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

BV

I

DSS

I

GSSF

IGSSR

DSS

VGS = 0V, ID = 250µA

VDS = 30V, VGS = 0V

VGS = 20V, VDS = 0V

VGS = -20V, VDS = 0V

On Characteristics

Gate Threshold Voltage

Static Drain-Source

On-Resistance

Dynamic Characteristics

d

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics

d

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V

GS(th)

R

DS(on)

t

d(on)

t

d(off)

Q

Q

VGS = VDS, ID = 250µA

VGS = 10V, ID = 7A

VGS = 4.5V, ID = 3.5A

C

iss

C

oss

C

rss

t

r

t

f

Q

g

gs

gd

VDS = 15V, VGS = 0V,
f = 1.0 MHz

VDD = 15V, ID = 7A,
VGS = 10V, R

VDS = 15V, ID = 7A,
VGS = 10V

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.


e.R

θJA

is the sum of junction-to-case-ambient thermal resistance where the case tmermal reference is defined

as the solder mounting surface of the drain pins. R

.

the user's board design

b

c

I

S

V

SD

θJc

is guaranteed by design while R

VGS = 0V, IS = 2.3A

= 3Ω

GEN

θJA

is determined by

Typ Max

30

100

-100

1.0 3.0

2822

4030 mΩ

575

135

105

10

25

13.8

20

5

10

50

5

10

18

1.4

3.2

2.3

1.2

V

1

µA

nA

nA

V

mΩ

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

A

V

1. 50CW when mounted

2

on a 1in

pad of 2 oz

copper

Scale 1 : 1 on letter size paper

f.Pulse Test : Pluse Width < 300us,Duty cycle <2%

2. 105CW when mounted
on a 0.4in

2

pad of 2 oz

copper

2

3. 125CW when mounted
on a minimun pad

CEM3252

8

VGS=10,9,8,7,6V

6

4

2

ID, Drain Current (A)

0

0 0.4 0.8 2.01.2 1.6

VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

900

750

600

450

300

C, Capacitance (pF)

150

0

0 3 6 9 12 15

C

iss

C

oss

C

rss

VDS, Drain-to-Source Voltage (V)

12

9

6

V

=3V

GS

3

ID, Drain Current (A)

TJ=125 C

0

1.5 2.5 3.5 4.52.0 3.0 4.0

25 C

-55 C

VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

2.2
ID=7A

VGS=10V

1.9

1.6

1.3

1.0

RDS(ON), Normalized

0.7

RDS(ON), On-Resistance(Ohms)

0.4

-100 -50 0 50 100 150 200

TJ, Junction Temperature( C)

Figure 3. Capacitance

1.3
VDS=V

GS

ID=250µA

1.2

1.1

1.0

0.9

0.8

VTH, Normalized

0.7

Gate-Source Threshold Voltage

0.6

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variation

with Temperature

Figure 4. On-Resistance Variation

with Temperature

V

=0

V

GS

1

10

0

10

IS, Source-drain current (A)

-1

10

0.4 0.6 0.8 1.0 1.41.2

VSD, Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

3

10

VDS=15V

ID=7A

8

6

4

2

VGS, Gate to Source Voltage (V)

0

0 3 6 9 1512

Qg, Total Gate Charge (nC)

Figure 7. Gate Charge

CEM3252

2

10

R

Limit

DS(ON)

1

10

0

10

-1

10

ID, Drain Current (A)

-2

10

TA=25 C
TJ=150 C

Single Pulse

-2

10

-1

10

10

VDS, Drain-Source Voltage (V)

1ms

10ms

100ms

1s

DC

0

1

10

2

10

IN

V

D

V

GS

GEN

R

G

S

Figure 9. Switching Test Circuit

0

10

D=0.5

0.2

-1

0.1

10

0.05

0.02

0.01

-2

10

r(t),Normalized Effective

Single Pulse

Transient Thermal Impedance

-3

10

-4

10

-3

10

DD

V

R

L

OUT

V

-2

10

Square Wave Pulse Duration (sec)

Figure 8. Maximum Safe

on

t

r

t

90%

10% 10%

INVERTED

50% 50%

V

V

d(on)

t

OUT

IN

10%

PULSE WIDTH

Figure 10. Switching Waveforms

PDM

-1

10

0

10

Operating Area

t

off

d(off)

t

90%

90%

t1

t2

1. RθJA (t)=r (t) * RθJA

2. RθJA=See Datasheet

3. TJM-TA = P* RθJA (t)

4. Duty Cycle, D=t1/t2

1

10

f

t

2

10

Figure 11. Normalized Thermal Transient Impedance Curve

4