Datasheet cem3178 Datasheet

CEM3178

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES

30V, 7.6A, R

R

Super high dense cell design for extremely low R

High power and current handing capability.

Lead free product is acquired.

Surface mount Package.

ABSOLUTE MAXIMUM RATINGS T

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed

Maximum Power Dissipation

= 22mΩ @VGS = 10V.

DS(ON)

= 33mΩ @VGS = 4.5V.

DS(ON)

Parameter

a

SO-8

.

DS(ON)

1

= 25 C unless otherwise noted

A

Symbol

V

DS

V

GS

I

D

I

DM

P

D

D1 D1 D2 D2

8

1

S1 G1 S2 G2

Limit

30

±20

7.6

30

2.0

PRELIMINARY

7

6 5

2

3 4

Units

V

V

A

A

W

Thermal Characteristics

Parameter Symbol

Thermal Resistance, Junction-to-Ambient

Specification and data are subject to change without notice .

b

C/W62.5RθJA

Rev 3. 2010.Apr

http://www.cetsemi.com

1

CEM3178

Electrical Characteristics T

= 25 C unless otherwise noted

A

Parameter Symbol Min Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

On Characteristics

c

Gate Threshold Voltage

Static Drain-Source

On-Resistance

Dynamic Characteristics

d

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics

d

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V

R

BV

C

C

C

t

d(on)

t

d(off)

Q

Q

DSS

I

DSS

I

GSSF

IGSSR

GS(th)

DS(on)

g

FS

iss

oss

rss

t

r

t

f

Q

g

gs

gd

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.


b

c

I

S

V

SD

Test Condition

VGS = 0V, ID = 250µA

VDS = 30V, VGS = 0V

VGS = 20V, VDS = 0V

VGS = -20V, VDS = 0V

VGS = VDS, ID = 250µA

VGS = 10V, ID = 6.3A

VGS = 4.5V, ID = 5.0A

VDS = 15V, ID = 6A

VDS = 15V, VGS = 0V,
f = 1.0 MHz

VDD = 15V, ID = 1A,
VGS = 10V, R

GEN

= 6Ω

VDS = 15V, ID = 6A,
VGS = 5V

VGS = 0V, IS = 1.6A

Typ Max

30

1 3

5

590

125

95

10

4

25

4

13

2

3.5

1

100

-100

2217

3327 mΩ

20

8

50

8

17

1.6

1.2

V

µA

nA

nA

V

mΩ

S

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

A

V

2

CEM3178

ID, Drain Current (A)

25

20

15

10

5

0

0 1

VGS=10,8,6,5V

2

VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

900

750

C

600

450

300

C, Capacitance (pF)

150

0

0 5 10 15 20 25

iss

C

oss

C

rss

VDS, Drain-to-Source Voltage (V)

VGS=4V

V

3

15

12

9

6

=3V

GS

4

ID, Drain Current (A)

3

TJ=125 C

0

1 2

25 C

3

-55 C

4

VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

2.2
ID=6.3A

VGS=10V

1.9

1.6

1.3

1.0

RDS(ON), Normalized

0.7

RDS(ON), On-Resistance(Ohms)

0.4

-100 -50 0 50 100 150 200

TJ, Junction Temperature( C)

Figure 3. Capacitance

1.3
VDS=V

GS

ID=250µA

1.2

1.1

1.0

0.9

0.8

VTH, Normalized

0.7

Gate-Source Threshold Voltage

0.6

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variation

with Temperature

Figure 4. On-Resistance Variation

with Temperature

V

=0

V

GS

1

10

0

10

IS, Source-drain current (A)

-1

10

0.4 0.6 0.8 1.0

1.41.2

VSD, Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

3

CEM3178

10

VDS=15V

ID=7A

8

6

4

2

VGS, Gate to Source Voltage (V)

0

0 4 8 12 16

Qg, Total Gate Charge (nC)

Figure 7. Gate Charge

V

IN

V

D

V

GS

GEN

R

G

S

DD

2

10

R

Limit

DS(ON)

1

10

0

10

-1

10

ID, Drain Current (A)

-2

10

TA=25 C
TJ=150 C

Single Pulse

-2

10

-1

10

10

DC

0

100ms

1s

1ms

10ms

10

1

2

10

VDS, Drain-Source Voltage (V)

Figure 8. Maximum Safe

Operating Area

on

t

d(off)

t

r

t

90%

10% 10%

INVERTED

50% 50%

V

V

d(on)

t

OUT

IN

10%

R

L

OUT

V

90%

t

off

f

t

90%

PULSE WIDTH

Figure 9. Switching Test Circuit

0

10

D=0.5

0.2

-1

10

0.1

0.05

r(t),Normalized Effective

0.02

Transient Thermal Impedance

-2

10

-4

10

-3

10

Figure 11. Normalized Thermal Transient Impedance Curve

Single Pulse

-2

10

Square Wave Pulse Duration (sec)

Figure 10. Switching Waveforms

PDM

t1

t2

1. RθJA (t)=r (t) * RθJA

2. RθJA=See Datasheet

3. TJM-TA = P* RθJA (t)

4. Duty Cycle, D=t1/t2

-1

10

0

10

1

10

2

10

4