Datasheet cem2939 Datasheet

CEM2939

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES

20V, 6.5A, R

R

-20V, -4.8A, R

R

Super high dense cell design for extremely low R

High power and current handing capability.

Lead free product is acquired.

Surface mount Package.

ABSOLUTE MAXIMUM RATINGS T

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed

Maximum Power Dissipation

Operating and Store Temperature Range TJ,Tstg -55 to 150

= 30mΩ @VGS = 4.5V.

DS(ON)

= 43mΩ @VGS = 2.5V.

DS(ON)

= 55mΩ @VGS = -4.5V.

DS(ON)

= 90mΩ @VGS = -2.5V.

DS(ON)

Parameter

a

SO-8

.

DS(ON)

1

= 25 C unless otherwise noted

A

Symbol

V

DS

V

GS

I

D

I

DM

P

D

D1 D1 D2 D2

8 7 6 5

1 2 3 4

S1 G1 S2 G2

N-Channel

20

±12

6.5

20

P-Channel

2.0

-20

±12

-4.8

-20

5

Units

V

A

W

C

Thermal Characteristics

Parameter Symbol Limit Units

Thermal Resistance, Junction-to-Ambient

Specification and data are subject to change without notice .

b

C/W62.5RθJA

Rev 3. 2007.Feb

http://www.cetsemi.com

1

CEM2939

N-Channel Electrical Characteristics T

Parameter Symbol Min Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

On Characteristics

c

Gate Threshold Voltage

Static Drain-Source

On-Resistance

Dynamic Characteristics

d

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics

d

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 

BV

DSS

I

DSS

I

GSSF

IGSSR

V

GS(th)

R

DS(on)

g

FS

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

b

c

I

S

V

SD

= 25 C unless otherwise noted

A

Test Condition

VGS = 0V, ID = 250µA

VDS = 16V, VGS = 0V

VGS = 12V, VDS = 0V

VGS = -12V, VDS = 0V

VGS = VDS, ID = 250µA

VGS = 4.5V, ID = 6.5A

VGS = 2.5V, ID = 5.4A

VDS = 5V, ID = 6.5A

VDS = 8V, VGS = 0V, f = 1.0 MHz

VDD = 15V, ID = 1A, VGS = 4.5V, R

GEN

=6Ω

VDS = 10V, ID =6.5A, VGS = 4.5V

VGS = 0V, IS = 1.3A

Typ Max

20

100

-100

0.55 1.5

3025

4335 mΩ

17

910

230

163

14

30

10

20

34

70

11

20

10

13

1.4

3.2

6.5

1.2

V

1

µA

nA

V

mΩ

S

pF

ns

nC

A

V

2

CEM2939

P-Channel Electrical Characteristics T

Parameter Symbol Min Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

On Characteristics

c

Gate Threshold Voltage

Static Drain-Source

On-Resistance

Dynamic Characteristics

d

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics

d

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 

BV

DSS

I

DSS

I

GSSF

IGSSR

V

GS(th)

R

DS(on)

g

FS

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

b

c

I

S

V

SD

= 25 C unless otherwise noted

A

Test Condition

VGS = 0V, ID = -250µA

VDS = -16V, VGS = 0V

VGS = 12V, VDS = 0V

VGS = -12V, VDS = 0V

VGS = VDS, ID = -250µA

VGS = -4.5V, ID = -3.2A

VGS = -2.5V, ID = -1.0A

VDS = -5V, ID = -5.5A

VDS = -10V, VGS = 0V, f = 1.0 MHz

VDD = -10V, ID = -4A, VGS = -4.5V, R

GEN

= 3Ω

VDS = -10V, ID = -4A, VGS = -4.5V

VGS = 0V, IS = -2.0A

Typ Max

-20

-1

100

-100

-0.55 -1.5

5543

9064 mΩ

10

1155

205

120

13.4

26.8

8.4

16.8

73.4

146.8

34.4

68.8

9.8

13

1.2

2.7

-4.8

-1.2

V

µA

nA

V

mΩ

S

pF

ns

nC

A

V

3

CEM2939

N-CHANNEL

20

16

12

8

ID, Drain Current (A)

4

0

0.0 0.5 1.0 1.5 2.0

1200

1000

800

600

400

C, Capacitance (pF)

200

0

0 2 4 6 8 10

VGS=4.5,3.5,3.0,2.5V

VGS=2.0V

VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

C

iss

C

oss

C

rss

VDS, Drain-to-Source Voltage (V)

20

25 C

16

12

8

4

0

TJ=125 C

1.5 2.0 2.51.0 3.0

ID, Drain Current (A)

VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

2.2 ID=6.5A

VGS=4.5V

1.9

1.6

1.3

1.0

RDS(ON), Normalized

0.7

RDS(ON), On-Resistance(Ohms)

0.4

-100 -50 0 50 100 150 200

TJ, Junction Temperature( C)

5

-55 C

Figure 3. Capacitance

1.3 VDS=V

GS

ID=250µA

1.2

1.1

1.0

0.9

0.8

VTH, Normalized

0.7

Gate-Source Threshold Voltage

0.6

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variation

with Temperature

Figure 4. On-Resistance Variation

with Temperature

V

=0

V

GS

1

10

0

10

IS, Source-drain current (A)

-1

10

0.4 0.6 0.8 1.0

1.41.2

VSD, Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

4

CEM2939

P-CHANNEL

15

12

9

6

-ID, Drain Current (A)

3

0

0 0.5 1 21.5 2.5

2400

2000

1600

1200

800

C, Capacitance (pF)

400

0

0 2 4 6 8 10 12

-VGS=4.5,-4.0,-3.5V

-VGS=2.5V

-VGS=2V

-VDS, Drain-to-Source Voltage (V)

Figure 7. Output Characteristics

C

iss

C

oss

C

rss

-VDS, Drain-to-Source Voltage (V)

15

25 C

12

9

6

-ID, Drain Current (A)

3

0

TJ=125 C

1 2 30 5

-55 C

-VGS, Gate-to-Source Voltage (V)

Figure 8. Transfer Characteristics

2.2 ID=-3.2A

VGS=-4.5V

1.9

1.6

1.3

1.0

RDS(ON), Normalized

0.7

RDS(ON), On-Resistance(Ohms)

0.4

-100 -50 0 50 100 150 200

TJ, Junction Temperature( C)

4

Figure 9. Capacitance

1.3 VDS=V

GS

ID=-250µA

1.2

1.1

1.0

0.9

0.8

VTH, Normalized

0.7

Gate-Source Threshold Voltage

0.6

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature( C)

Figure 11. Gate Threshold Variation

with Temperature

Figure 10. On-Resistance Variation

with Temperature

V

=0

V

GS

1

10

0

10

-IS, Source-drain current (A)

-1

10

0.4 0.6 0.8 1.0

1.41.2

-VSD, Body Diode Forward Voltage (V)

Figure 12. Body Diode Forward Voltage

Variation with Source Current

5

CEM2939

N-CHANNEL

5

VDS=10V

ID=6.5A

4

3

2

1

VGS, Gate to Source Voltage (V)

0

0 2 4 6 108

P-CHANNEL

5

VDS=-10V

ID=-4A

4

3

2

1

-VGS, Gate to Source Voltage (V)

0

0 2.5 5 7.5 10

Qg, Total Gate Charge (nC)

Figure 13. Gate Charge

Qg, Total Gate Charge (nC)

2

10

R

Limit

DS(ON)

1

10

0

10

-1

10

ID, Drain Current (A)

-2

10

TA=25 C TJ=150 C

Single Pulse

-2

10

-1

10ms

100ms

1s

DC

0

10

1

10

2

10

5

VDS, Drain-Source Voltage (V)

Figure 14. Maximum Safe

Limit

DS(ON)

TA=25 C TJ=150 C

10

Operating Area

100ms

1s

DC

-1

0

10

10ms

10

1

2

10

2

10

R

1

10

0

10

-1

10

-ID, Drain Current (A)

Single Pulse

-2

10

-2

10

-VDS, Drain-Source Voltage (V)

Figure 15. Gate Charge

Figure 16. Maximum Safe

Operating Area

6

CEM2939

DD

V

on

t

d(off)

t

r

t

90%

10% 10%

INVERTED

50% 50%

V

d(on)

t

OUT

IN

10%

R

IN

V

GS

GEN

R

G

L

D

OUT

V

S

PULSE WIDTH

90%

t

off

f

t

90%

Figure 17. Switching Test Circuit

0

10

D=0.5

0.2

-1

0.1

10

0.05

0.02

0.01

-2

10

r(t),Normalized Effective

Single Pulse

Transient Thermal Impedance

-3

10

-4

10

-3

10

Figure 19. Normalized Thermal Transient Impedance Curve

Figure 18. Switching Waveforms

-2

10

-1

10

Square Wave Pulse Duration (sec)

PDM

t1

t2

1. RθJA (t)=r (t) * RθJA

2. RθJA=See Datasheet

3. TJM-TA = P* RθJA (t)

4. Duty Cycle, D=t1/t2

0

10

1

10

2

10

7