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cem26138
Datasheet
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Datasheet cem26138 Datasheet

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Page 1
CEM26138
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 7.6A, R
20V, 6A, R
R
Super high dense cell design for extremely low R
High power and current handing capability.
Lead-free plating ; RoHS compliant.
Surface mount Package.
ABSOLUTE MAXIMUM RATINGS T
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation
Operating and Store Temperature Range TJ,Tstg -55 to 150
= 22mΩ @VGS = 10V.
DS(ON)
= 33mΩ @VGS = 4.5V.
DS(ON)
= 27mΩ @VGS = 4.5V.
DS(ON)
= 40mΩ @VGS = 2.5V.
DS(ON)
Parameter
a
SO-8
.
DS(ON)
1
= 25 C unless otherwise noted
A
Symbol Channel 1
V
DS
V
GS
I
D
I
DM
P
D
D1 D1 D2 D2
8
1
S1 G1 S2 G2
30
±20
7.6
30
2.0
7
6 5
2
3 4
Channel 2
20
±12
6
24
PRELIMINARY
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter Symbol Limit Units
Thermal Resistance, Junction-to-Ambient
This is preliminary information on a new product in development now . Details are subject to change without notice .
b
1
C/W62.5RθJA
Rev 2. 2012.Aug
http://www.cetsemi.com
Page 2
CEM26138
N-Channel(Q1) Electrical Characteristics T
Parameter Symbol Min Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
c
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics
d
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
d
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
R
BV
C
C
C
t
d(on)
t
d(off)
Q
Q
DSS
I
DSS
I
GSSF
IGSSR
GS(th)
DS(on)
iss
oss
rss
t
r
t
f
Q
g
gs
gd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 
b
c
I
S
V
SD
Test Condition
VGS = 0V, ID = 250µA
VDS = 30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = 250µA
VGS = 10V, ID = 6.3A
VGS = 4.5V, ID = 5.0A
VDS = 15V, VGS = 0V, f = 1.0 MHz
VDD = 15V, ID = 1A, VGS = 10V, R
VDS = 15V, ID = 6A, VGS = 5V
VGS = 0V, IS = 1.6A
= 25 C unless otherwise noted
A
Typ Max
30
1 3
590
125
95
10
= 6Ω
GEN
25
13
3.5
4
4
2
1
100
-100
2217
3327 mΩ
1.6
1.2
V
µA
nA
nA
V
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
2
Page 3
CEM26138
N-Channel(Q2) Electrical Characteristics T
Parameter Symbol Min Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
c
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics
d
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
d
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
BV
I
IGSSR
V
GS(th)
R
DS(on)
C
C
C
t
d(on)
t
d(off)
Q
Q
DSS
I
DSS
GSSF
iss
oss
rss
t
r
t
f
Q
g
gs
gd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 
b
c
I
S
V
SD
Test Condition
VGS = 0V, ID = 250µA
VDS = 20V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
VGS = VDS, ID = 250µA
VGS = 4.5V, ID = 6A
VGS = 2.5V, ID = 5.2A
VDS = 8V, VGS = 0V, f = 1.0 MHz
VDD = 10V, ID = 1A, VGS = 4.5V, R
VDS = 10V, ID = 6A, VGS = 4.5V
VGS = 0V, IS = 1.7A
= 25 C unless otherwise noted
A
Typ Max
20
0.5 1.5
720
130
95
10
= 6Ω
GEN
34
6.8
0.5
1.8
7
6
1
100
-100
2721
4032 mΩ
1.7
1.2
V
µA
nA
nA
V
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
3
Page 4
CEM26138
CHANNEL 1
25
20
15
10
ID, Drain Current (A)
5
0
0 1
900
750
600
450
300
C, Capacitance (pF)
150
0
0 3 6 9 12 15
VGS=10,8,6,5V
2
VGS=4V
V
GS
3
=3V
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
C
iss
C
oss
C
rss
VDS, Drain-to-Source Voltage (V)
15
12
9
6
ID, Drain Current (A)
3
TJ=125 C
4
0
0 2
25 C
-55 C
4
6
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2 ID=6.3A
VGS=10V
1.9
1.6
1.3
1.0
RDS(ON), Normalized
0.7
RDS(ON), On-Resistance(Ohms)
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 3. Capacitance
1.3 VDS=V
GS
ID=250µA
1.2
1.1
1.0
0.9
0.8
VTH, Normalized
0.7
Gate-Source Threshold Voltage
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
Figure 4. On-Resistance Variation
with Temperature
V
=0
V
GS
1
10
0
10
IS, Source-drain current (A)
-1
10
0.4 0.6 0.8 1.0
1.41.2
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
4
Page 5
CEM26138
CHANNEL 2
10
8
6
4
ID, Drain Current (A)
2
0
0.0 0.5 2.0 3.01.51.0
900
750
600
450
300
C, Capacitance (pF)
150
0
0 2 4 6 8 10
VGS=4.5,3.5,2.5V
V
=2.0V
GS
V
=1.5V
GS
2.5
VDS, Drain-to-Source Voltage (V)
Figure 7. Output Characteristics
C
iss
C
oss
C
rss
VDS, Drain-to-Source Voltage (V)
15
12
9
6
ID, Drain Current (A)
3
TJ=125 C
0
0.0 0.5 2.0 3.01.51.0 2.5
25 C
VGS, Gate-to-Source Voltage (V)
Figure 8. Transfer Characteristics
2.2 ID=6A
VGS=4.5V
1.9
1.6
1.3
1.0
RDS(ON), Normalized
0.7
RDS(ON), On-Resistance(Ohms)
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
-55 C
Figure 9. Capacitance
1.3 VDS=V
GS
ID=250µA
1.2
1.1
1.0
0.9
0.8
VTH, Normalized
0.7
Gate-Source Threshold Voltage
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 11. Gate Threshold Variation
with Temperature
Figure 10. On-Resistance Variation
with Temperature
V
=0
V
GS
1
10
0
10
IS, Source-drain current (A)
-1
10
0.4 0.6 0.8 1.0
1.41.2
VSD, Body Diode Forward Voltage (V)
Figure 12. Body Diode Forward Voltage
Variation with Source Current
5
Page 6
CEM26138
CHANNEL 1
10
VDS=15V
ID=6A
8
6
4
2
VGS, Gate to Source Voltage (V)
0
0 4 8 12 16
CHANNEL 2
5
VDS=10V
ID=4.5A
4
3
2
1
VGS, Gate to Source Voltage (V)
0
0 2 4 6 8
Qg, Total Gate Charge (nC)
Figure 13. Gate Charge
Qg, Total Gate Charge (nC)
2
10
R
Limit
DS(ON)
1
10
0
10
-1
10
ID, Drain Current (A)
-2
10
TA=25 C TJ=150 C
Single Pulse
-2
10
-1
10
10
DC
0
100ms
1s
1ms
10ms
10
1
2
10
VDS, Drain-Source Voltage (V)
Figure 14. Maximum Safe
Operating Area
2
10
R
Limit
DS(ON)
1
10
0
10
-1
10
ID, Drain Current (A)
-2
10
TA=25 C TJ=150 C
Single Pulse
-2
10
10
DC
-1
10
100ms
1s
0
1ms
10ms
1
10
2
10
VDS, Drain-Source Voltage (V)
Figure 15. Gate Charge
Figure 16. Maximum Safe
Operating Area
6
Page 7
CEM26138
DD
V
on
t
d(off)
t
r
t
90%
10% 10%
INVERTED
50% 50%
V
V
d(on)
t
OUT
IN
10%
R
IN
V
V
GS
GEN
R
G
L
D
OUT
V
S
PULSE WIDTH
90%
t
off
f
t
90%
Figure 17. Switching Test Circuit
0
10
D=0.5
0.2
-1
0.1
10
0.05
0.02
0.01
-2
10
r(t),Normalized Effective
Single Pulse
Transient Thermal Impedance
-3
10
-4
10
-3
10
Figure 19. Normalized Thermal Transient Impedance Curve
Figure 18. Switching Waveforms
-2
10
-1
10
Square Wave Pulse Duration (sec)
PDM
t1
t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
0
10
1
10
2
10
7
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