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cem2539
Datasheet
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Datasheet cem2539 Datasheet

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Page 1
CEM2539
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
20V, 7.5A, R
R
R
-20V, -4.0A, R
R
R
Super high dense cell design for extremely low R
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation
Operating and Store Temperature Range TJ,Tstg -55 to 150
= 22mΩ @VGS = 10V.
DS(ON)
= 24mΩ @VGS = 4.5V.
DS(ON)
= 33mΩ @VGS = 2.5V.
DS(ON)
= 80mΩ @VGS = -10V.
DS(ON)
= 100mΩ @VGS = -4.5V.
DS(ON)
= 150mΩ @VGS = -2.5V.
DS(ON)
Parameter
a
SO-8
G1
.
DS(ON)
1
= 25 C unless otherwise noted
A
Symbol
V
DS
V
GS
I
D
I
DM
P
D
*1K
D1 D1 D2 D2
8 7 6 5
1 2 3 4
S1 G1 S2 G2
N-Channel
20
±12
7.5
25
D1
G2
S1 S2
P-Channel
-20
±12
-4.0
-15
2.0
D2
5
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter Symbol Limit Units
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice .
b
C/W62.5RθJA
Rev 3. 2007.Sep.
http://www.cetsemi.com
1
Page 2
CEM2539
N-Channel Electrical Characteristics T
Parameter Symbol Min Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current
Gate Body Leakage Current
On Characteristics
c
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics
d
Forward Transconductance
Switching Characteristics
d
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 
BV
DSS
I
DSS
I
GSS
IGSS
V
GS(th)
R
DS(on)
g
FS
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
b
c
I
S
V
SD
= 25 C unless otherwise noted
A
Test Condition
VGS = 0V, ID = 250µA
VDS = 20V, VGS = 0V
VGS = ±12V, VDS = 0V
VGS = ±12V, VDS = 0V
VGS = VDS, ID = 250µA
VGS = 10V, ID = 6A
VGS = 4.5V, ID = 6A
Typ Max
20
±10 ±10
0.5 1.2
2217
2420 mΩ
V
1
µA
µA
µA
V
mΩ
VGS = 2.5V, ID = 5A 3325 mΩ
VDS = 15V, ID = 6A 15
0.35 VDD = 10V, ID = 1A, VGS = 4.5V, R
GEN
= 6Ω
0.87
3.60
2.01
VDS = 10V, ID = 5A, VGS = 4.5V
4.3
1.1
2.5
VGS = 0V, IS = 1.5A
0.7
1.8
7.5
4.3
5.7
1.5
1.2
S
µs
µs
µs
µs
nC
nC
nC
A
V
2
Page 3
CEM2539
P-Channel Electrical Characteristics T
Parameter Symbol Min Units
= 25 C unless otherwise noted
A
Test Condition
Typ Max
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
c
Gate Threshold Voltage
Static Drain-Source On-Resistance
Dynamic Characteristics
d
Forward Transconductance S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
d
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
BV
I
I
IGSSR
V
GS(th)
R
DS(on)
g
C
C
C
t
d(on)
t
d(off)
Q
Q
DSS
DSS
GSSF
FS
iss
oss
rss
t
r
t
f
Q
g
gs
gd
VGS = 0V, ID = -250µA
VDS = -20V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
VGS = VDS, ID = -250µA
VGS = -10V, ID = -3.5A
VGS = -4.5V, ID = -2.8A 100 mΩ
VGS = -2.5V, ID = -2.0A mΩ
-20
-0.5
70
80
90
-1
100
-100
-1
80
150
VDS = -5V, ID = -3.5A 10
VDS = -10V, VGS = 0V, f = 1.0 MHz
1175
230
130
14.4 VDD = -10V, ID = -4A, VGS = -4.5V, R
GEN
= 3Ω
VDS = -10V, ID = -4A, VGS = -4.5V
9
72.8
35
10.6
1.5
28.8
18
145.6
70
14.1
2.5
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 
b
c
I
S
V
SD
VGS = 0V, IS = -1.0A
-4.0
-1.0
V
µA
nA
nA
V
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
3
Page 4
CEM2539
N-CHANNEL
25
20
15
10
ID, Drain Current (A)
5
0
0 3
2.2 ID=6A
VGS=10V
1.9
1.6
1.3
1.0
RDS(ON), Normalized
0.7
RDS(ON), On-Resistance(Ohms)
0.4
-100 -50 0 50 100 150 200
VGS=10,8,6,5,4V
V
=2V
GS
6
9
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
TJ, Junction Temperature( C)
10
8
6
4
ID, Drain Current (A)
2
TJ=125 C
12
0
0.5 1.00.0 2.5
25 C
-55 C
1.5 2.0
5
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
V
=0V
GS
1
10
0
10
IS, Source-drain current (A)
-1
10
0.4 0.6 0.8 1.0
1.41.2
VSD, Body Diode Forward Voltage (V)
Figure 3. On-Resistance Variation
with Temperature
1.3 VDS=V
GS
ID=250µA
1.2
1.1
1.0
0.9
0.8
VTH, Normalized
0.7
Gate-Source Threshold Voltage
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
Figure 4. Body Diode Forward Voltage
Variation with Source Current
4
Page 5
CEM2539
P-CHANNEL
15
12
9
6
-ID, Drain Current (A)
3
0
0 1 2 43 5
1500
1250
1000
750
500
C, Capacitance (pF)
250
0
0 2 4 6 8 10
-VGS=-10,-8,-6V
-VGS=2V
-VDS, Drain-to-Source Voltage (V)
Figure 7. Output Characteristics
C
iss
C
oss
C
rss
-VDS, Drain-to-Source Voltage (V)
10
8
6
4
-ID, Drain Current (A)
2
TJ=125 C
0
25 C
0.5 1.0 1.50 2.0
-VGS, Gate-to-Source Voltage (V)
Figure 8. Transfer Characteristics
2.2 ID=-3.5A
VGS=-10V
1.9
1.6
1.3
1.0
RDS(ON), Normalized
0.7
RDS(ON), On-Resistance(Ohms)
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
-55 C
Figure 9. Capacitance
1.3 VDS=V
GS
ID=-250µA
1.2
1.1
1.0
0.9
0.8
VTH, Normalized
0.7
Gate-Source Threshold Voltage
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 11. Gate Threshold Variation
with Temperature
Figure 10. On-Resistance Variation
with Temperature
V
=0
V
GS
1
10
0
10
-IS, Source-drain current (A)
-1
10
0.4 0.6 0.8 1.0
1.41.2
-VSD, Body Diode Forward Voltage (V)
Figure 12. Body Diode Forward Voltage
Variation with Source Current
5
Page 6
CEM2539
N-CHANNEL
5
VDS=10V
ID=5A
4
3
2
1
VGS, Gate to Source Voltage (V)
0
0 1 2 4 5
P-CHANNEL
5
VDS=-6V
ID=-3.5A
4
3
2
1
-VGS, Gate to Source Voltage (V)
0
0 3 6 9 12
3
Qg, Total Gate Charge (nC)
Figure 13. Gate Charge
Qg, Total Gate Charge (nC)
ID, Drain Current (A)
-ID, Drain Current (A)
2
10
R
Limit
DS(ON)
1
10
0
10
-1
10
TA=25 C TJ=150 C
Single Pulse
-2
10
-2
10
-1
10
VDS, Drain-Source Voltage (V)
Figure 14. Maximum Safe
Limit
DS(ON)
TA=25 C TJ=150 C
10
Operating Area
-1
2
10
1
10
0
10
-1
10
-2
10
10
R
Single Pulse
-2
-VDS, Drain-Source Voltage (V)
10ms
100ms
1s
DC
2
10
2
10
100ms
1s
10ms
1
10
1
10
0
10
DC
0
10
5
Figure 15. Gate Charge
Figure 16. Maximum Safe
Operating Area
6
Page 7
CEM2539
DD
V
on
t
d(off)
t
r
t
90%
10% 10%
INVERTED
50% 50%
V
V
d(on)
t
OUT
IN
10%
R
IN
V
V
GS
GEN
R
G
L
D
OUT
V
S
PULSE WIDTH
90%
t
off
f
t
90%
5
Figure 17. Switching Test Circuit
0
10
D=0.5
0.2
-1
10
0.1
0.05
r(t),Normalized Effective
0.02
Transient Thermal Impedance
-2
10
-4
10
-3
10
Figure 19. Normalized Thermal Transient Impedance Curve
Single Pulse
-2
10
Square Wave Pulse Duration (sec)
Figure 18. Switching Waveforms
PDM
-1
10
0
10
t1
t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
1
10
2
10
7
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