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P-Channel Enhancement Mode Field Effect Transistor
FEATURES
CEM2401
-20V, -6A, R
R
Super high dense cell design for extremely low R
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
ABSOLUTE MAXIMUM RATINGS T
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation
Operating and Store Temperature Range TJ,Tstg -55 to 150
= 44mΩ @VGS = -4.5V.
DS(ON)
= 65mΩ @VGS = -2.5V.
DS(ON)
Parameter
a
SO-8
.
DS(ON)
1
= 25 C unless otherwise noted
A
Symbol
V
DS
V
GS
I
D
I
DM
P
D
D D D D
8 7 6 5
1 2 3 4
S S S G
Limit
-20
±12
-6
-20
2.5
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter Symbol Limit Units
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice .
b
Rev 4. 2011.July
http://www.cetsemi.com
1
C/W50RθJA
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CEM2401
P-Channel Electrical Characteristics T
Parameter Symbol Min Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
c
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics
d
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
d
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
BV
DSS
I
DSS
I
GSSF
IGSSR
V
GS(th)
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
b
c
I
S
V
SD
= 25 C unless otherwise noted
A
Test Condition
VGS = 0V, ID = -250µA
VDS = -20V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
VGS = VDS, ID = -250µA
VGS = -4.5V, ID = -4A
VGS = -2.5V, ID = -3.2A
VDS = -10V, VGS = 0V,
f = 1.0 MHz
VDD = -10V, ID = -4A,
VGS = -4.5V, R
GEN
= 3Ω
VDS = -10V, ID = -4A,
VGS = -4.5V
VGS = 0V, IS = -1.0A
Typ Max
-20
100
-100
-0.4 -1
35
50
965
200
155
15
10
40
13
13
2.5
3
-2.5
-1.0
V
-1
µA
nA
nA
V
44
mΩ
65 mΩ
pF
pF
pF
30
20
80
26
17
ns
ns
ns
ns
nC
nC
nC
A
V
2
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CEM2401
15
-VGS=4.5,-4.0,-3.5V
12
9
6
-ID, Drain Current (A)
3
0
0 0.5 1 21.5 2.5
-VGS=2.5V
-VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
1500
1250
C
1000
750
500
C, Capacitance (pF)
250
C
rss
0
0 5 10 15 20 25 30
iss
C
oss
-VDS, Drain-to-Source Voltage (V)
-VGS=2V
10
25 C
8
6
4
-ID, Drain Current (A)
TJ=125 C
2
0
0.0 1.0 2.0 3.00.5 1.5 2.5
-VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2
ID=-4A
VGS=-4.5V
1.9
1.6
1.3
1.0
RDS(ON), Normalized
0.7
RDS(ON), On-Resistance(Ohms)
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
-55 C
Figure 3. Capacitance
1.3
VDS=V
GS
ID=-250µA
1.2
1.1
1.0
0.9
0.8
VTH, Normalized
0.7
Gate-Source Threshold Voltage
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
Figure 4. On-Resistance Variation
with Temperature
V
=0
V
GS
1
10
0
10
-IS, Source-drain current (A)
-1
10
0.4 0.6 0.8 1.0
1.41.2
-VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
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CEM2401
5
VDS=-10V
ID=-4A
4
3
2
1
-VGS, Gate to Source Voltage (V)
0
0 3 6 12 159
Qg, Total Gate Charge (nC)
V
GS
GEN
R
Figure 7. Gate Charge
DD
V
R
IN
V
L
D
G
S
2
10
R
Limit
-ID, Drain Current (A)
1
10
0
10
-1
10
-2
10
DS(ON)
TA=25 C
TJ=150 C
Single Pulse
-2
10
-1
10
10ms
100ms
1s
DC
0
10
1
10
2
10
-VDS, Drain-Source Voltage (V)
Figure 8. Maximum Safe
Operating Area
on
t
d(off)
t
r
d(on)
t
OUT
V
OUT
V
IN
V
10%
t
90%
10% 10%
INVERTED
50% 50%
90%
t
off
f
t
90%
PULSE WIDTH
Figure 9. Switching Test Circuit
0
10
D=0.5
0.2
-1
0.1
10
0.05
0.02
0.01
-2
10
r(t),Normalized Effective
Single Pulse
Transient Thermal Impedance
-3
10
-4
10
-3
10
Figure 11. Normalized Thermal Transient Impedance Curve
Figure 10. Switching Waveforms
-2
10
-1
10
Square Wave Pulse Duration (sec)
4
PDM
t1
t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
0
10
1
10
2
10
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