Datasheet cem2281 Datasheet

CEM2281

P-Channel Enhancement Mode Field Effect Transistor

FEATURES

-20V, -7.2A, R R Super high dense cell design for extremely low R

High power and current handing capability. Lead free product is acquired. Surface mount Package.

ABSOLUTE MAXIMUM RATINGS T

Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed

Maximum Power Dissipation

Operating and Store Temperature Range TJ,Tstg -55 to 150

= 30mΩ @VGS = -4.5V.

DS(ON)

= 43mΩ @VGS = -2.5V.

DS(ON)

Parameter

a

SO-8

.

DS(ON)

1

= 25 C unless otherwise noted

A

Symbol

V

DS

V

GS

I

D

I

DM

P

D

D D D D

8 7 6 5

1 2 3 4

S S S G

Limit

-20

±12

-7.2

-30

2.5

PRELIMINARY

Units

V V A

A W C

Thermal Characteristics

Parameter Symbol Limit Units

Thermal Resistance, Junction-to-Ambient

Details are subject to change without notice .

b

Rev 1. 2006.JulyThis is preliminary information on a new product in development now .

http://www.cetsemi.com

1

C/W50RθJA

CEM2281

P-Channel Electrical Characteristics T

Parameter Symbol Min Units

= 25 C unless otherwise noted

A

Test Condition

Typ Max

Off Characteristics

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse

On Characteristics

c

Gate Threshold Voltage Static Drain-Source

On-Resistance

Dynamic Characteristics

d

Forward Transconductance S Input Capacitance Output Capacitance Reverse Transfer Capacitance

Switching Characteristics

d

Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge

BV

V R

t

Q

DSS

I

DSS

I

GSSF

IGSSR

GS(th)

DS(on)

g

FS

C

iss

C

oss

C

rss

d(on)

t

r

d(off)

t

f

Q

g

Q

gs gd

VGS = 0V, ID = -250µA

-20 VDS = -20V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V

VGS = VDS, ID = -250µA VGS = -4.5V, ID = -7.2A VGS = -2.5V, ID = -5.7A

-0.5 -1.3 25 33

VDS = -1.8V, ID = -7.2A 41

VDS = -15V, VGS = 0V, f = 1.0 MHz

2035

295 200

11

VDD = -10V, ID = -1A, VGS = -4.5V, R

GEN

= 24Ω

10

356 110

VDS = -16V, ID = -4.7A, VGS = -4.5V

19

4.3

2.6

-1

100

-100

30 43 mΩ

22

20 712 220

25

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 

b

c

I

S

V

SD

VGS = 0V, IS = -2.1A

-7.2

-1.2

V

µA

nA nA

V

mΩ

pF pF pF

ns ns ns

ns nC nC nC

A V

2

CEM2281

25

-VGS=4.5,4V

20

15

10

-ID, Drain Current (A)

5

0

0.0 0.5 2.0 3.0

-VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

3600

3000

2400

1800

1200

C, Capacitance (pF)

600

C

rss

0

0 5 10 15 20 25 30

C

iss

C

oss

-VDS, Drain-to-Source Voltage (V)

15

-V

=3V

GS

-V

=2V

GS

2.51.51.0

12

9

6

-ID, Drain Current (A)

3

0

0.0 0.6 1.2 1.80.3 0.9 1.5

TJ=125 C

25 C

-55 C

-VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

2.2 ID=-6.5A

VGS=-4.5V

1.9

1.6

1.3

1.0

RDS(ON), Normalized

0.7

RDS(ON), On-Resistance(Ohms)

0.4

-100 -50 0 50 100 150 200

TJ, Junction Temperature( C)

Figure 3. Capacitance

1.3 VDS=V

GS

ID=-250µA

1.2

1.1

1.0

0.9

0.8

VTH, Normalized

0.7

Gate-Source Threshold Voltage

0.6

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variation

with Temperature

Figure 4. On-Resistance Variation

with Temperature

V

=0

V

GS

1

10

0

10

-IS, Source-drain current (A)

-1

10

0.4 0.6 0.8 1.0

1.41.2

-VSD, Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

3

CEM2281

5

VDS=-16V

ID=-4.7A

4

3

2

1

-VGS, Gate to Source Voltage (V)

0

0 5 10 20 2515

Qg, Total Gate Charge (nC)

V

GS

GEN

R

Figure 7. Gate Charge

DD

V

R

IN

V

L

D

G

S

2

10

R

Limit

DS(ON)

1

10

0

10

-1

10

-ID, Drain Current (A)

-2

10

TA=25 C TJ=150 C

Single Pulse

-2

10

-1

10

10ms

100ms

1s

DC

6

0

10

1

10

2

10

-VDS, Drain-Source Voltage (V)

Figure 8. Maximum Safe

Operating Area

on

t

d(off)

t

r

d(on)

t

OUT

V

OUT

V

IN

V

10%

t

90%

10% 10%

INVERTED

50% 50%

90%

t

off

f

t

90%

PULSE WIDTH

Figure 9. Switching Test Circuit

0

10

D=0.5

0.2

-1

0.1

10

0.05

0.02

0.01

-2

10

r(t),Normalized Effective

Single Pulse

Transient Thermal Impedance

-3

10

-4

10

-3

10

Figure 11. Normalized Thermal Transient Impedance Curve

Figure 10. Switching Waveforms

-2

10

-1

10

Square Wave Pulse Duration (sec)

4

PDM

t1

t2

1. RθJA (t)=r (t) * RθJA

2. RθJA=See Datasheet

3. TJM-TA = P* RθJA (t)

4. Duty Cycle, D=t1/t2

0

10

1

10

2

10