Datasheet cem1010 Datasheet

CEM1010

Single N-Channel Enhancement Mode Field Effect Transistor

FEATURES

100V, 9.5A, R

Super high dense cell design for extremely low R

High power and current handing capability.

Lead-free plating ; RoHS compliant.

Surface mount Package.

ABSOLUTE MAXIMUM RATINGS T

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed

Maximum Power Dissipation

Operating and Store Temperature Range TJ,Tstg -55 to 150

= 15.5mΩ @VGS = 10V.

DS(ON)

Parameter

a

SO-8

.

DS(ON)

1

= 25 C unless otherwise noted

A

Symbol

V

DS

V

GS

TA=25 C

TA=100 C

I

D

T=1 sec

T=0.1 sec

e

e

I

DM

P

D

D D D D

S S S G

Limit

100

±20

9.5
6 A

17

25 A

38

2.5

PRELIMINARY

8 7 6 5

1 2 3 4

Units

V

V

A

A

A

W

C

Thermal Characteristics

Parameter Symbol Limit Units

Thermal Resistance, Junction-to-Ambient

Details are subject to change without notice .

b

Rev 1. 2011.Nov.This is preliminary information on a new product in development now .

http://www.cetsemi.com

1

C/W50RθJA

CEM1010

Electrical Characteristics T

= 25 C unless otherwise noted

c

Parameter Symbol Min Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

On Characteristics

c

Gate Threshold Voltage

Static Drain-Source

On-Resistance

Dynamic Characteristics

d

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics

d

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V

R

BV

C

C

C

t

d(on)

t

d(off)

Q

Q

DSS

I

DSS

I

GSSF

IGSSR

GS(th)

DS(on)

iss

oss

rss

t

r

t

f

Q

g

gs

gd

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
e.Refer to Figure8

b

c

I

S

V

SD

Test Condition

VGS = 0V, ID = 250µA

VDS = 100V, VGS = 0V

VGS = 20V, VDS = 0V

VGS = -20V, VDS = 0V

VGS = VDS, ID = 250µA

VGS = 10V, ID = 4A

VDS = 25V, VGS = 0V,
f = 1.0 MHz

VDD = 50V, ID = 5A,
VGS = 10V, R

GEN

= 6Ω

VDS = 50V, ID = 5A,
VGS = 10V

VGS = 0V, IS = 2A

Typ Max

100

2 4

2915

250

145

30

14

80

19

76

14

21

1

100

-100

15.512.5

60

28

160

38

101

2

1.2

V

µA

nA

nA

V

mΩ

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

A

V

2

CEM1010

10

8

6

4

ID, Drain Current (A)

2

0

0 0.2 0.4 1.00.6 0.8

VGS=10,9,8,7,6V

VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

3500

3000

2500

2000

1500

1000

C, Capacitance (pF)

500

C

rss

0

0 5 10 15 20 25

VDS, Drain-to-Source Voltage (V)

15

TJ=125 C

12

9

V

=4V

GS

6

3

0

0 4 8 1062

25 C

-55 C

ID, Drain Current (A)

VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

2.7

C

iss

C

oss

RDS(ON), Normalized

ID=4A
VGS=10V

2.3

1.9

1.5

1.1

0.7

RDS(ON), On-Resistance(Ohms)

0.4

-100 -50 0 50 100 150 200

TJ, Junction Temperature( C)

Figure 3. Capacitance

1.3
VDS=V

GS

ID=250µA

1.2

1.1

1.0

0.9

0.8

VTH, Normalized

0.7

Gate-Source Threshold Voltage

0.6

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variation

with Temperature

Figure 4. On-Resistance Variation

with Temperature

V

=0

V

GS

1

10

0

10

IS, Source-drain current (A)

-1

10

0.4 0.6 0.8 1.0

1.41.2

VSD, Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

4

CEM1010

10

VDS=50V

ID=5A

8

6

4

2

VGS, Gate to Source Voltage (V)

0

0 16 32 48 8064

Qg, Total Gate Charge (nC)

Figure 7. Gate Charge

IN

V

V

GS

GEN

R

G

2

10

R

Limit

DS(ON)

1

10

0

10

-1

10

ID, Drain Current (A)

-2

10

TA=25 C
TJ=150 C

Single Pulse

-1

10

0

10

DC

1s

10ms

100ms

1

10

2

10

VDS, Drain-Source Voltage (V)

Figure 8. Maximum Safe

Operating Area

DD

V

on

t

d(off)

t

r

t

90%

10% 10%

INVERTED

50% 50%

V

V

d(on)

t

OUT

IN

10%

R

L

D

OUT

V

S

90%

t

off

f

t

90%

PULSE WIDTH

Figure 9. Switching Test Circuit

0

10

D=0.5

0.2

-1

10

0.1

0.05

r(t),Normalized Effective

0.02

Transient Thermal Impedance

-2

10

-4

10

-3

10

Figure 11. Normalized Thermal Transient Impedance Curve

Single Pulse

-2

10

Square Wave Pulse Duration (sec)

Figure 10. Switching Waveforms

PDM

t1

t2

1. RθJA (t)=r (t) * RθJA

2. RθJA=See Datasheet

3. TJM-TA = P* RθJA (t)

4. Duty Cycle, D=t1/t2

-1

10

0

10

1

10

2

10

4