Datasheet cem0415 Datasheet

CEM0415

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

150V, 4A, R

R

Super high dense cell design for extremely low R

High power and current handing capability.

Lead-free plating ; RoHS compliant.

Surface mount Package.

ABSOLUTE MAXIMUM RATINGS T

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed

Maximum Power Dissipation

Single Pulsed Avalanche Energy

Single Pulsed Avalanche Current

Operating and Store Temperature Range TJ,Tstg -55 to 150

= 85mΩ @VGS = 10V.

DS(ON)

= 95mΩ @VGS = 6V.

DS(ON)

Parameter

a

.

DS(ON)

D D D D

8 7 6 5

SO-8

1

= 25 C unless otherwise noted

A

1 2 3 4

S S S G

Symbol Limit

V

DS

V

GS

I

D

I

DM

P

D

d

d

E

AS

I

AS

150

±30

4

16

2.5

18

8.5

PRELIMINARY

Units

V

V

A

A

W

mJ

A

C

Thermal Characteristics

Parameter Symbol Limit Units

Thermal Resistance, Junction-to-Ambient

This is preliminary information on a new product in development now .
Details are subject to change without notice .

b

1

C/W50RθJA

Rev 1. 2012.Sep

http://www.cetsemi.com

CEM0415

Electrical Characteristics T

= 25 C unless otherwise noted

c

Parameter Symbol Min Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

BV

I

DSS

I

GSSF

IGSSR

DSS

On Characteristics

Gate Threshold Voltage

Static Drain-Source
On-Resistance

Gate input resistance

Dynamic Characteristics

c

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics

c

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V

GS(th)

R

DS(on)

R

C

C

C

t

d(on)

t

d(off)

Q

Q

g

iss

oss

rss

t

r

t

f

Q

g

gs

gd

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 0.5mH, IAS =8.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C

b

I

S

V

SD

Test Condition

VGS = 0V, ID = 250µA

VDS = 130V, VGS = 0V

VGS = 30V, VDS = 0V

VGS = -30V, VDS = 0V

VGS = VDS, ID = 250µA

VGS = 10V, ID = 3.3A

150

Typ Max

100

-100

2 4

62

85

V

1

µA

nA

nA

V

mΩ

VGS = 6V, ID = 3.0A 9570 mΩ

f=1MHz,open Drain 1

VDS = 30V, VGS = 0V,

1355

f = 1.0 MHz

VDD = 75V, ID = 3.5A,
VGS = 10V, R

GEN

= 6Ω

VDS = 75V, ID = 3.5A,
VGS = 10V

VGS = 0V, IS = 2A

130

50

18

5

35

5

23

5

6

10

10

1.2

Ω

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

2

A

V

2

CEM0415

4.8

VGS=10,8,7V

4.0

3.2

2.4

1.6

ID, Drain Current (A)

0.8

0

0.0 1 2 43

VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

1500

1250

1000

750

500

C, Capacitance (pF)

250

0

0 6 12 18 24 30

C

iss

C

oss

C

rss

VDS, Drain-to-Source Voltage (V)

7.5

6.0

V

=5V

GS

5

4.5

3.0

ID, Drain Current (A)

TJ=125 C

1.5

0

25 C

-55 C

2

4

6 80.0 10

VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

2.2
ID=3.3A

VGS=10V

1.9

1.6

1.3

1.0

RDS(ON), Normalized

0.7

RDS(ON), On-Resistance(Ohms)

0.4

-100 -50 0 50 100 150 200

TJ, Junction Temperature( C)

Figure 3. Capacitance

1.3
VDS=V

GS

ID=250µA

1.2

1.1

1.0

0.9

0.8

VTH, Normalized

0.7

Gate-Source Threshold Voltage

0.6

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variation

with Temperature

Figure 4. On-Resistance Variation

with Temperature

V

=0

V

GS

1

10

0

10

IS, Source-drain current (A)

-1

10

0.4 0.6 0.8 1.0

1.41.2

VSD, Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

3

10

VDS=75V
ID=3.5A

8

6

4

2

VGS, Gate to Source Voltage (V)

0

0 5 10 15 2520

Qg, Total Gate Charge (nC)

CEM0415

2

10

R

Limit

DS(ON)

1

10

10ms

0

10

-1

10

ID, Drain Current (A)

-2

10

TA=25 C
TJ=150 C

Single Pulse

-1

10

10

VDS, Drain-Source Voltage (V)

100ms

1s

DC

0

1

10

2

10

3

10

Figure 7. Gate Charge

IN

V

D

V

GS

GEN

R

G

S

Figure 9. Switching Test Circuit

0

10

D=0.5

0.2

-1

0.1

10

0.05

0.02

0.01

-2

10

r(t),Normalized Effective

Single Pulse

Transient Thermal Impedance

-3

10

-4

10

-3

10

DD

V

R

L

OUT

V

-2

10

Square Wave Pulse Duration (sec)

Figure 8. Maximum Safe

on

t

r

t

90%

10% 10%

INVERTED

50% 50%

V

V

d(on)

t

OUT

IN

10%

PULSE WIDTH

Figure 10. Switching Waveforms

PDM

-1

10

0

10

Operating Area

t

off

d(off)

t

90%

90%

t1

t2

1. RθJA (t)=r (t) * RθJA

2. RθJA=See Datasheet

3. TJM-TA = P* RθJA (t)

4. Duty Cycle, D=t1/t2

1

10

f

t

2

10

Figure 11. Normalized Thermal Transient Impedance Curve

4