Datasheet cem0215 Datasheet

CEM0215

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

150V, 2A, R

Super high dense cell design for extremely low R

High power and current handing capability.

Lead free product is acquired.

Surface mount Package.

ABSOLUTE MAXIMUM RATINGS T

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed

Maximum Power Dissipation

Operating and Store Temperature Range TJ,Tstg -55 to 150

= 440mΩ @VGS = 10V.

DS(ON)

Parameter

a

SO-8

.

DS(ON)

1

= 25 C unless otherwise noted

A

Symbol Limit

V

DS

V

GS

I

D

I

DM

P

D

D D D D

8 7 6 5

1 2 3 4

S S S G

150

±20

2

8

2.5

PRELIMINARY

Units

V

V

A

A

W

C

Thermal Characteristics

Parameter Symbol Limit Units

Thermal Resistance, Junction-to-Ambient

This is preliminary information on a new product in development now .
Details are subject to change without notice .

b

1

C/W50RθJA

Rev 2. 2011.Aug

http://www.cetsemi.com

CEM0215

Electrical Characteristics T

= 25 C unless otherwise noted

c

Parameter Symbol Min Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

BV

I

DSS

I

GSSF

IGSSR

DSS

On Characteristics

Gate Threshold Voltage

Static Drain-Source

On-Resistance

Dynamic Characteristics

c

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics

c

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V

GS(th)

R

DS(on)

C

C

C

t

d(on)

t

d(off)

Q

Q

iss

oss

rss

t

r

t

f

Q

g

gs

gd

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.

b

I

S

V

SD

Test Condition

VGS = 0V, ID = 250µA

VDS = 150V, VGS = 0V

VGS = 20V, VDS = 0V

VGS = -20V, VDS = 0V

VGS = VDS, ID = 250µA

VGS = 10V, ID = 1A

VDS = 25V, VGS = 0V,
f = 1.0 MHz

VDD = 75V, ID = 1A,
VGS = 10V, R

GEN

= 22Ω

VDS = 120V, ID = 1.8A,
VGS = 10V

VGS = 0V, IS = 2A

Typ Max

150

2 4

360

360

70

15

12

4

35

6

9.1

1.2

2.8

1

100

-100

440

24

8

70

12

12

2

1.2

V

µA

nA

nA

V

mΩ

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

A

V

2

CEM0215

2.4

2.0

1.6

1.2

0.8

ID, Drain Current (A)

0.4

0

0.0 0.4 0.8 1.61.2

VGS=10,8,7V

VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

420

350

280

210

140

C, Capacitance (pF)

70

0

0 5 10 15 20 25

C

iss

C

oss

C

rss

VDS, Drain-to-Source Voltage (V)

V

GS

=4V

2.0 2.4

3.5

2.8

2.1

1.4

TJ=125 C

ID, Drain Current (A)

0.7

0

25 C

-55 C

2

4

VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

2.2
ID=1A

VGS=10V

1.9

1.6

1.3

1.0

RDS(ON), Normalized

0.7

RDS(ON), On-Resistance(Ohms)

0.4

-100 -50 0 50 100 150 200

TJ, Junction Temperature( C)

6 80.0 10

Figure 3. Capacitance

1.3
VDS=V

GS

ID=250µA

1.2

1.1

1.0

0.9

0.8

VTH, Normalized

0.7

Gate-Source Threshold Voltage

0.6

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variation

with Temperature

Figure 4. On-Resistance Variation

with Temperature

V

=0

V

GS

1

10

0

10

IS, Source-drain current (A)

-1

10

0.4 0.6 0.8 1.0

1.41.2

VSD, Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

3

CEM0215

10

VDS=120V
ID=1.8A

8

6

4

2

VGS, Gate to Source Voltage (V)

0

0 2 4 6 108

Qg, Total Gate Charge (nC)

Figure 7. Gate Charge

IN

V

V

GS

GEN

R

G

1

10

R

Limit

DS(ON)

10ms

10

10

ID, Drain Current (A)

10

0

-1

TC=25 C
TJ=150 C

Single Pulse

-2

0

10

10

DC

1

100ms

1s

2

10

3

10

VDS, Drain-Source Voltage (V)

Figure 8. Maximum Safe

Operating Area

DD

V

on

t

d(off)

t

r

t

90%

10% 10%

INVERTED

50% 50%

V

V

d(on)

t

OUT

IN

10%

R

L

D

OUT

V

S

90%

t

off

f

t

90%

PULSE WIDTH

Figure 9. Switching Test Circuit

0

10

D=0.5

0.2

-1

0.1

10

0.05

0.02

0.01

-2

10

r(t),Normalized Effective

Single Pulse

Transient Thermal Impedance

-3

10

-4

10

-3

10

Figure 11. Normalized Thermal Transient Impedance Curve

Figure 10. Switching Waveforms

-2

10

-1

10

Square Wave Pulse Duration (sec)

4

PDM

t1

t2

1. RθJA (t)=r (t) * RθJA

2. RθJA=See Datasheet

3. TJM-TA = P* RθJA (t)

4. Duty Cycle, D=t1/t2

0

10

1

10

2

10