Datasheet cek01n6g Datasheet

CEK01N6G

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

600V, 1A, R

High dense cell design for extremely low R

= 9.3 Ω @VGS = 10V.

DS(ON)

DS(ON)

.

Rugged and reliable.

Lead free product is acquired.

TO-92(Bulk) & TO-92(Ammopack) package.

G

G

D

S

TO-92(Ammopack)

ABSOLUTE MAXIMUM RATINGS T

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed

Maximum Power Dissipation

b

G

D

S

TO-92(Bulk)

= 25 C unless otherwise noted

A

Symbol

V

DS

V

GS

a

I

D

I

DM

P

D

Limit

Operating and Store Temperature Range TJ,Tstg -55 to 150

600

±30

0.4

1.6

3.1

D

S

Units

V

V

A

A

W

C

Thermal Characteristics

Parameter Symbol Limit Units

Thermal Resistance, Junction-to-Lead

Details are subject to change without notice .

C/W40RθJL

Rev 1. 2009.Nov.

http://www.cetsemi.com

1

CEK01N6G

Electrical Characteristics T

Parameter Symbol Min Units

= 25 C unless otherwise noted

c

Test Condition

Typ Max

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

BV

I

DSS

I

GSSF

IGSSR

DSS

VGS = 0V, ID = 250µA

VDS = 600V, VGS = 0V

VGS = 30V, VDS = 0V

VGS = -30V, VDS = 0V

600

20

100

-100

On Characteristics

Gate Threshold Voltage

Static Drain-Source

On-Resistance

Dynamic Characteristics

c

Forward Transconductance S

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics

c

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V

R

DS(on)

t

d(on)

t

d(off)

Q

Q

GS(th)

g

FS

C

iss

C

oss

C

rss

t

r

t

f

Q

g

gs

gd

VGS = VDS, ID = 250µA

VGS = 10V, ID = 0.4A

b

VDS = 15V, ID = 0.4A 10

VDS = 25V, VGS = 0V,
f = 1.0 MHz

VDD = 300V, ID = 0.5A,
VGS = 10V, R

GEN

= 10Ω

VDS = 480V, ID = 1A,
VGS = 10V

2 4

7.3

210

55

25

19

10

31

37

6

0.7

3.5

9.3

25

13

40

48

12

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.

b

I

S

V

SD

VGS = 0V, IS = 0.4A

0.4

1.5

V

µA

nA

nA

V

Ω

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

A

V

6

2

CEK01N6G

1.2

1.0

0.8

0.6

0.4

ID, Drain Current (A)

0.2

0

0.0 4 8 1612

VGS=10,8,7V

VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

240

200

160

120

80

C, Capacitance (pF)

40

0

0 5 10 15 20 25

VDS, Drain-to-Source Voltage (V)

V

GS

=4V

20 24

C

1.2

25 C

1.0

0.6

0.4

ID, Drain Current (A)

0.2

TJ=125 C

0.0
1 2 3 4

-55 C

5 6 7

VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

3.0

iss

C

oss

C

rss

RDS(ON), Normalized

ID=0.4A
VGS=10V

2.5

2.0

1.5

1.0

0.5

RDS(ON), On-Resistance(Ohms)

0.0

-100 -50 0 50 100 150 200

TJ, Junction Temperature( C)

Figure 3. Capacitance

1.3
VDS=V

GS

ID=250µA

1.2

1.1

1.0

0.9

0.8

VTH, Normalized

0.7

Gate-Source Threshold Voltage

0.6

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variation

with Temperature

Figure 4. On-Resistance Variation

with Temperature

V

=0

V

GS

0

10

-1

10

IS, Source-drain current (A)

-2

10

0.4 0.6 0.8 1.0

1.41.2

VSD, Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

3

CEK01N6G



10

VDS=480V
ID=1A

8

6

4

2

VGS, Gate to Source Voltage (V)

0

0 1 2 3 6

Qg, Total Gate Charge (nC)

Figure 7. Gate Charge

DD

V

IN

V

D

V

GS

GEN

R

G

S

4 5

R

L

1

10

4

R

Limit

DS(ON)

0

10

-1

10

ID, Drain Current (A)

-2

10

TC=25 C
TJ=150 C

Single Pulse

0

10

1s

DC

1

10

VDS, Drain-Source Voltage (V)

Figure 8. Maximum Safe

Operating Area

on

t

d(off)

t

r

d(on)

t

OUT

V

OUT

V

IN

V

10%

t

90%

10% 10%

INVERTED

50% 50%

PULSE WIDTH

100ms

t

off

90%

10

90%

10ms

2

3

10

f

t

Figure 9. Switching Test Circuit

0

10

D=0.5

0.2

-1

0.1

10

0.05

0.02

0.01

-2

10

r(t),Normalized Effective

Single Pulse

Transient Thermal Impedance

-3

10

-4

10

-3

10

Figure 11. Normalized Thermal Transient Impedance Curve

Figure 10. Switching Waveforms

-2

10

-1

10

Square Wave Pulse Duration (msec)

4

PDM

t1

t2

1. RθJA (t)=r (t) * RθJA

2. RθJA=See Datasheet

3. TJM-TA = P* RθJA (t)

4. Duty Cycle, D=t1/t2

0

10

1

10

2

10