Datasheet ceh2609 Datasheet

CEH2609

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES

20V, 3.5A, R

R

-20V, -2.5A, R

R

Super high dense cell design for extremely low R

= 60mΩ @VGS = 4.5V.

DS(ON)

= 80mΩ @VGS = 2.5V.

DS(ON)

= 100mΩ @VGS = -4.5V.

DS(ON)

= 145mΩ @VGS = -2.5V.

DS(ON)

.

High power and current handing capability.

Lead free product is acquired.

Surface mount Package.

4

5

6

1

G1(1) G2(3)

3

2

TSOP-6

ABSOLUTE MAXIMUM RATINGS T

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed

Maximum Power Dissipation

a

= 25 C unless otherwise noted

A

Symbol

V

DS

V

GS

I

D

I

DM

P

D

N-Channel

20

±12

3.5

14

1.14

Operating and Store Temperature Range TJ,Tstg -55 to 150

D1(6)

S1(5)

P-Channel

-20

±12

-2.5

10

D2(4)

S2(2)

Units

V

A

W

C

Thermal Characteristics

Parameter Symbol Limit Units

Thermal Resistance, Junction-to-Ambient

Details are subject to change without notice .

b

C/W110RθJA

Rev 1. 2010.Dec

http://www.cetsemi.com

1

CEH2609

N-Channel Electrical Characteristics T

Parameter Symbol Min Units

Off Characteristics

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse

On Characteristics

c

Gate Threshold Voltage Static Drain-Source On-Resistance

Dynamic Characteristics

d

Input Capacitance Output Capacitance Reverse Transfer Capacitance

Switching Characteristics

d

Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 

BV

DSS

I

DSS

I

GSSF

IGSSR

V

GS(th)

R

DS(on)

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

b

c

I

S

V

SD

= 25 C unless otherwise noted

A

Test Condition

VGS = 0V, ID = 250µA VDS = 20V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V

VGS = VDS, ID = 250µA VGS = 4.5V, ID = 3.5A VGS = 2.5V, ID = 2.0A

VDS = 10V, VGS = 0V, f = 1.0 MHz

VDD = 10V, ID = 3.5A, VGS = 4.5V, R

GEN

= 6Ω

VDS = 10V, ID = 3.5A, VGS = 4.5V

VGS = 0V, IS = 1A

Typ Max

20

100

-100

0.5 1.0 6045 8054 mΩ

330

90 60

10

20

6

12

28

56

15

30

5

1.0

1.5

1.1

V

1

µA

nA nA

V

mΩ

pF pF pF

ns ns ns

ns nC nC nC

1

A V

2

CEH2609

P-CHANNEL Electrical Characteristics T

Parameter Symbol Min Units

Off Characteristics

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse

On Characteristics

c

Gate Threshold Voltage Static Drain-Source

On-Resistance

Dynamic Characteristics

d

Input Capacitance Output Capacitance Reverse Transfer Capacitance

Switching Characteristics

d

Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 5 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 

BV

DSS

I

DSS

I

GSSF

IGSSR

V

GS(th)

R

DS(on)

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

g

Q

gs

Q

gd

b

c

I

S

V

SD

VGS = 0V, ID = -250µA VDS = -16V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V

VGS = VDS, ID = -250µA VGS = -4.5V, ID = -2.5A

VGS = -2.5V, ID = -1.5A

VDS = -10V, VGS = 0V, f = 1.0 MHz

VDD = -10V, ID = -2.5A, VGS = -4.5V, R

VDS = -10V, ID = -2.5A, VGS = -4.5V

VGS = 0V, IS = -1A

= 25 C unless otherwise noted

A

Test Condition

-20

-0.6

= 3Ω

GEN

Typ Max

-1

100

-100

-1.5 10080

145105 mΩ

405

90 60

11

22

8

16

37

74

23

46

4.5

6

1.2 1

-1

-1.1

V

µA

nA nA

V

mΩ

pF pF pF

ns ns ns

ns nC nC nC

A V

3

N-CHANNEL

10

8

VGS=4.5,3.5,2.5V

CEH2609

7.5 25 C

6

4

ID, Drain Current (A)

2

0

0 1 2 3

VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

600

500

400

300

200

C, Capacitance (pF)

100

C

rss

0

0 5 10 15 20 25

VDS, Drain-to-Source Voltage (V)

VGS=2.0V

VGS=1.5V

C

iss

C

oss

4.5

3

TJ=125 C

1.5

ID, Drain Current (A)

0

0 2.0 4.0 6.01.0 3.0

VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

1.8 ID=3.5

VGS=4.5V

1.6

1.4

1.2

1.0

RDS(ON), Normalized

0.8

RDS(ON), On-Resistance(Ohms)

0.6

-100 -50 0 50 100 150 200

TJ, Junction Temperature( C)

-55 C

5.0

Figure 3. Capacitance

1.3 VDS=V

GS

ID=250µA

1.2

1.1

1.0

0.9

0.8

VTH, Normalized

0.7

Gate-Source Threshold Voltage

0.6

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variation

with Temperature

Figure 4. On-Resistance Variation

with Temperature

V

=0

V

GS

1

10

0

10

IS, Source-drain current (A)

-1

10

0.4 0.6 0.8 1.0

1.41.2

VSD, Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

4

P-CHANNEL

10

8

-VGS=4.5,3.5,2.5V

CEH2609

5

25 C

4

6

4

-ID, Drain Current (A)

2

0

0.0 0.5 2 2.51.51

-VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

600

500

400

300

200

C, Capacitance (pF)

100

0

0 2 4 6 8 10

C

iss

C

oss

C

rss

-VDS, Drain-to-Source Voltage (V)

3

2

-V

=1.5

V

GS

-ID, Drain Current (A)

1

TJ=125 C

0

0.0 1.0 2.0 3.00.5 1.5

-55 C

2.5

-VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

2.2 ID=-2.5A

VGS=-4.5V

1.9

1.6

1.3

1.0

RDS(ON), Normalized

0.7

RDS(ON), On-Resistance(Ohms)

0.4

-100 -50 0 50 100 150 200

TJ, Junction Temperature( C)

Figure 3. Capacitance

1.3 VDS=V

GS

ID=-250µA

1.2

1.1

1.0

0.9

0.8

VTH, Normalized

0.7

Gate-Source Threshold Voltage

0.6

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variation

with Temperature

Figure 4. On-Resistance Variation

with Temperature

V

=0

V

GS

1

10

0

10

-IS, Source-drain current (A)

-1

10

0.2 0.4 0.6 0.8

1.21.0

-VSD, Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

5

N-CHANNEL

5

VDS=10V ID=3.5A

4

3

2

1

VGS, Gate to Source Voltage (V)

0

0 1 2 3 54

Qg, Total Gate Charge (nC)

CEH2609

R

Limit

DS(ON)

1

10

0

10

-1

10

ID, Drain Current (A)

-2

10

TA=25 C TJ=150 C

Single Pulse

-1

10

0

10

VDS, Drain-Source Voltage (V)

DC

100ms

1s

1ms

10ms

1

10

2

10

P-CHANNEL

5

VDS=-10V ID=-2.5A

4

3

2

1

-VGS, Gate to Source Voltage (V)

0

0 1.5 3 4.5 6

Figure 13. Gate Charge

Qg, Total Gate Charge (nC)

Figure 15. Gate Charge

Figure 14. Maximum Safe

Operating Area

2

10

R

Limit

DS(ON)

1

10

0

10

-1

10

-ID, Drain Current (A)

-2

10

TA=25 C TJ=150 C

Single Pulse

-1

10

DC

0

10

100ms

1s

10ms

1ms

10

1

2

10

-VDS, Drain-Source Voltage (V)

Figure 16. Maximum Safe

Operating Area

6

CEH2609

DD

V

on

t

d(off)

t

r

t

90%

10% 10%

INVERTED

50% 50%

V

d(on)

t

OUT

IN

10%

R

IN

V

GS

GEN

R

G

L

D

OUT

V

S

PULSE WIDTH

90%

t

off

f

t

90%

Figure 17. Switching Test Circuit

2

0

10

D=0.5

0.2

-1

0.1

10

0.05

r(t),Normalized Effective

Transient Thermal Impedance

0.02 Single Pulse

-2

10

-4

10

-3

10

Figure 19. Normalized Thermal Transient Impedance Curve

Figure 18. Switching Waveforms

-2

10

-1

10

Square Wave Pulse Duration (sec)

PDM

t1

t2

1. RθJA (t)=r (t) * RθJA

2. RθJA=See Datasheet

3. TJM-TA = P* RθJA (t)

4. Duty Cycle, D=t1/t2

0

10

1

10

2

10

7