Page 1
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
CEH2321
-20V, -4.8A, R
R
High dense cell design for extremely low R
Rugged and reliable.
Lead free product is acquired.
TSOP-6 package.
ABSOLUTE MAXIMUM RATINGS T
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation
Operating and Store Temperature Range TJ,Tstg -55 to 150
= 55mΩ @VGS = -4.5V.
DS(ON)
= 80mΩ @VGS = -2.5V.
DS(ON)
Parameter
a
DS(ON)
6
.
4
5
3
2
1
TSOP-6
= 25 C unless otherwise noted
A
Symbol
V
DS
V
GS
I
D
I
DM
P
D
G(3)
Limit
-19.2
-20
±12
-4.8
2.0
D(1,2,5,6,)
S(4)
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter Symbol Limit Units
Thermal Resistance, Junction-to-Ambient
2005.June http://www.cetsemi.com
b
1
C/W62.5RθJA
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CEH2321
Electrical Characteristics T
= 25 C unless otherwise noted
A
Parameter Symbol Min Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
c
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics
d
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
d
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
BV
I
IGSSR
V
GS(th)
R
DS(on)
g
C
C
C
t
d(on)
t
d(off)
Q
Q
DSS
I
DSS
GSSF
FS
iss
oss
rss
t
r
t
f
Q
g
gs
gd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 5 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
b
c
I
S
V
SD
Test Condition
VGS = 0V, ID = -250µA
VDS = -16V, VGS = 0V
VGS = 12V, VDS = 0V
VGS = -12V, VDS = 0V
VGS = VDS, ID = -250µA
VGS = -4.5V, ID = -4.5A
VGS = -2.5V, ID = -3.6A
VDS = -5V, ID = -4.5A
VDS = -10V, VGS = 0V,
f = 1.0 MHz
VDD = -10V, ID = -1A,
VGS = -4.5V, R
GEN
= 6Ω
VDS = -10V, ID = -4.5A,
VGS = -4.5V
VGS = 0V, IS = -1.3A
-20
-0.6
Typ Max
100
-100
-1.5
5545
8065 mΩ
11
1490
252
192
15
21
10
16
68
105
31
47
13.5
19
3
4
-1.3
-1.2
V
-1
µA
nA
nA
V
mΩ
7
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
A
V
2
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CEH2321
15
-VGS=4.5,3.0,2.5V
12
9
6
-ID, Drain Current (A)
3
0
0.0 0.5 2.0 2.51.51.0
-VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
2400
2000
C
1600
1200
800
C, Capacitance (pF)
400
0
0 2 4 6 8 10
iss
C
oss
C
rss
-VDS, Drain-to-Source Voltage (V)
10
-V
=2.0
V
GS
-V
=1.5
V
GS
8
6
4
-ID, Drain Current (A)
2
TJ=125 C
0
0.0 1.0 2.0 3.00.5 1.5 2.5
25 C
-55 C
-VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2.2
ID=-4.5A
VGS=-4.5V
1.9
1.6
1.3
1.0
RDS(ON), Normalized
0.7
RDS(ON), On-Resistance(Ohms)
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 3. Capacitance
1.3
VDS=V
GS
ID=-250µA
1.2
1.1
1.0
0.9
0.8
VTH, Normalized
0.7
Gate-Source Threshold Voltage
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
Figure 4. On-Resistance Variation
with Temperature
V
=0
V
GS
1
10
0
10
-IS, Source-drain current (A)
-1
10
0.2 0.4 0.6 0.8
1.21.0
-VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
Page 4
5
VDS=-10V
ID=-4.5A
4
3
2
1
-VGS, Gate to Source Voltage (V)
0
0 4 8 12 16
Qg, Total Gate Charge (nC)
CEH2321
2
10
R
Limit
DS(ON)
1
10
0
10
-1
10
-ID, Drain Current (A)
-2
10
TA=25 C
TJ=150 C
Single Pulse
-1
10
10
-VDS, Drain-Source Voltage (V)
10ms
100ms
1s
DC
0
1
10
2
10
Figure 7. Gate Charge
IN
V
D
V
GS
GEN
R
G
S
Figure 9. Switching Test Circuit
0
10
D=0.5
0.2
-1
0.1
10
0.05
0.02
0.01
-2
10
r(t),Normalized Effective
Single Pulse
Transient Thermal Impedance
-3
10
-4
10
-3
10
DD
V
R
L
OUT
V
-2
10
Square Wave Pulse Duration (sec)
Figure 8. Maximum Safe
on
t
r
t
90%
10% 10%
INVERTED
50% 50%
V
V
d(on)
t
OUT
IN
10%
PULSE WIDTH
Figure 10. Switching Waveforms
PDM
-1
10
0
10
Operating Area
t
off
d(off)
t
90%
90%
t1
t2
1. RθJA (t)=r (t) * RθJA
2. RθJA=See Datasheet
3. TJM-TA = P* RθJA (t)
4. Duty Cycle, D=t1/t2
1
10
8
f
t
2
10
Figure 11. Normalized Thermal Transient Impedance Curve
4
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