Datasheet ceh2288 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

CEH2288

20V, 5.2A , R

R

High dense cell design for extremely low R

= 26mΩ @VGS = 4.5V.

DS(ON)

= 35mΩ @VGS = 2.5V.

DS(ON)

.

Rugged and reliable.

Lead free product is acquired.

TSOP-6 package.

4

5

6

1

G1(6) G2(4)

3

2

TSOP-6

ABSOLUTE MAXIMUM RATINGS T

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed

Maximum Power Dissipation

a

= 25 C unless otherwise noted

A

Symbol

V

DS

V

GS

I

D

I

DM

P

D

Limit

±12

1.14

Operating and Store Temperature Range TJ,Tstg -55 to 150

20

5.2

20

D1(2)

S1(1)

D2(5)

S2(3)

Units

V

A

W

C

Thermal Characteristics

Parameter Symbol Limit Units

Thermal Resistance, Junction-to-Ambient

Details are subject to change without notice .

b

Rev 2. 2007.MARCH

http://www.cetsemi.com

C/W110RθJA

1

CEH2288

Electrical Characteristics T

= 25 C unless otherwise noted

A

Parameter Symbol Min Units

Off Characteristics

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse

On Characteristics

c

Gate Threshold Voltage Static Drain-Source On-Resistance

Dynamic Characteristics

d

Forward Transconductance

Input Capacitance Output Capacitance Reverse Transfer Capacitance

Switching Characteristics

d

Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge

V R

BV

C C C

t

d(on)

t

d(off)

Q Q

DSS

I

DSS

I

GSSF

IGSSR

GS(th)

DS(on)

g

FS

iss oss rss

t

r

t

f

Q

g

gs

gd

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. 

b

c

I

S

V

SD

Test Condition

VGS = 0V, ID = 250µA VDS = 20V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V

VGS = VDS, ID = 250µA VGS = 4.5V, ID = 4.5A VGS = 2.5V, ID = 3.5A

VDS = 5V, ID = 5.2A

VDS = 10V, VGS = 0V,  f = 1.0 MHz

VDD = 10V, ID = 5.2A, VGS = 5V, R

GEN

= 3Ω

VDS = 10V, ID = 5.2A, VGS = 4.5V

VGS = 0V, IS = 5.2A

Typ Max

20

100

-100

0.5 1.0 2621 3526 mΩ

17

835 125

95

10.7

3.8

25.3

27 10 63

2.8

8.2

1.0

1.9

5.2

1.2

V

1

µA

nA nA

V

mΩ

S

8

pF pF pF

ns ns ns

7

ns nC nC nC

A V

2

CEH2288

5

VGS=4.5,3.5,2.5V

4

3

2

ID, Drain Current (A)

1

0

0 0.3 0.6 0.9

VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

1500

1250

1000

750

500

C, Capacitance (pF)

250

C

rss

0

0 5 10 15 20 25

VDS, Drain-to-Source Voltage (V)

C

iss

C

oss

VGS=2.0V

VGS=1.5V

10

8

6

4

ID, Drain Current (A)

2

0

TJ=125 C

0 0.5 1.0 2.01.5

VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

1.8 ID=5.2

VGS=4.5V

1.6

1.4

1.2

1.0

RDS(ON), Normalized

0.8

RDS(ON), On-Resistance(Ohms)

0.6

-100 -50 0 50 100 150 200

TJ, Junction Temperature( C)

25 C

-55 C

Figure 3. Capacitance

1.3 VDS=V

GS

ID=250µA

1.2

1.1

1.0

0.9

0.8

VTH, Normalized

0.7

Gate-Source Threshold Voltage

0.6

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variation

with Temperature

Figure 4. On-Resistance Variation

with Temperature

V

=0

V

GS

1

10

0

10

IS, Source-drain current (A)

-1

10

0.4 0.6 0.8 1.0

1.41.2

VSD, Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

3

CEH2288

5

VDS=10V ID=5.2A

4

3

2

1

VGS, Gate to Source Voltage (V)

0

0 3 6 9 12

Qg, Total Gate Charge (nC)

Figure 7. Gate Charge

V

IN

V

D

V

GS

GEN

R

G

S

DD

2

10

R

Limit

DS(ON)

1

10

0

10

-1

10

ID, Drain Current (A)

-2

10

TA=25 C TJ=150 C

Single Pulse

-2

10

-1

10

DC

10

10ms

100ms

0

1ms

1

10

2

10

VDS, Drain-Source Voltage (V)

Figure 8. Maximum Safe

Operating Area

on

t

d(off)

t

r

t

90%

10% 10%

INVERTED

50% 50%

V

d(on)

t

OUT

IN

10%

R

L

OUT

V

90%

t

off

f

t

90%

8

PULSE WIDTH

Figure 9. Switching Test Circuit

2

0

10

D=0.5

0.2

-1

0.1

10

0.05

r(t),Normalized Effective

Transient Thermal Impedance

0.02 Single Pulse

-2

10

-4

10

-3

10

Figure 11. Normalized Thermal Transient Impedance Curve

Figure 10. Switching Waveforms

-2

10

-1

10

Square Wave Pulse Duration (sec)

4

PDM

t1

t2

1. RθJA (t)=r (t) * RθJA

2. RθJA=See Datasheet

3. TJM-TA = P* RθJA (t)

4. Duty Cycle, D=t1/t2

0

10

1

10

2

10