Page 1
CEG9926
Nov. 2002
Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V , 4.5A , R
Super high dense cell design for extremely low R
High power and current handing capability.
TSSOP-8 for Surface Mount Package.
ȀȀȀ
DS(ON)
=30m @VGS=4.5V.
Ω
DS(ON)
=40m @VGS=2.5V.
R
Ω
S
D
2
G
2
S
2
2
TSSOP-8
DS(ON)
D1
1
.
S1
2
S1
3
G
1
4
G
1
S
1
S
1
D
1
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
-Pulsed
a
b
Symbol
V
DS
GS
V
D
I
DM
I
Limit Unit
Ć
Ć
Ć
20
8
4.5
25
V
V
A
A
D2
8
7
S2
6
S2
G
2
5
9
Drain-Source Diode Forward Current
Maximum Power Dissipation
a
Operating Junction and Storage
a
T
Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
a
9-17
S
I
P
D
J,TSTG
įJA
R
1.7
ȑȎȐ
-55 to 150
125
A
W
C
C
/W
Page 2
CEG9926
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
C
Typ
Parameter
Symbol
OFF CHARACTERISTICS
Condition
Min
Max
Unit
9
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS
b
Gate Threshold Voltage
Drain-Source On-State Resistance
On-State Drain Current
BV
DSS
DSS
I
GSS
I
V
GS(th)
DS(ON)
R
D(ON)
I
g
FS
C
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
ISS
C
OSS
C
RSS
C
SWITCHING CHARACTERISTICS
VGS=0V,ID=250µA
VDS=20V, VGS=0V
VGS=Ć8V, VDS=0V
VDS=VGS,ID=250µA
VGS=4.5V, ID=4.5A
GS
=4.0V, ID=5A
V
VGS=2.5V, ID=3.5A
VDS=5V, VGS=4.5V
VDS=10V, ID=4.5A
DS
=8V,VGS=0V
V
f =1.0MH
Z
20
1
ĆȑȐȐ
0.5 1.0
30
24
23
32
40
10
10
500
300
140
V
µA
nA
V
mΩȀȀȀ
mΩ
mΩ
A
SForward Transconductance
P
F
P
F
P
F
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
D(ON)
t
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
DD
=10V,
V
I
D
=1A,
GEN
= 4.5V,
V
GEN =
Ω
6
R
VDS=10V, ID=4.5A,
VGS=4.5V
9-18
40 ns
20
18 40
60
108
5628
15
10
2.3
2.9
ns
ns
ns
nC
nC
nC
Page 3
CEG9926
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
C
Max
Unit
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
b
VGS= 0V, Is =1.7A
Notes
a.Surface Mounted on FR4 Board, t 10sec.
b.Pulse Test:Pulse Width 300ijs, Duty Cycle 2%.
ś ś
ś
c.Guaranteed by design, not subject to production testing.
10
VGS=4.5,3.5,2.5V
8
6
4
2
ID, Drain Current(A)
0
0 0.5 1.0
V
DS, Drain-to-SourceVoltage (V)
1.5
Figure 1. Output Characteristics
2.0
VGS=2.0V
V
G
S
=1.
2.5
5V
3.0
D, Drain Current (A)
I
0.8
25
20
15
10
5
Tj=125 C
0
0.0 0.5 1 1.5 2 2.5 3
V
GS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
25 C
-55 C
1.2
V
9
600
500
400
300
200
C, Capacitance (pF)
100
0
024681012
VDS, Drain-to SourceVoltage (V)
Ciss
Coss
Crss
Figure 3. Capacitance
1.80
1.60
1.40
1.20
On-Resistance(Ohms)
1.00
RDS(ON), Normalized
0.80
DS(ON),
R
0.60
-50 -25
Figure 4. On-Resistance Variation with
9-19
I
D=4.5A
VGS=4.5V
0
TJ, JunctionTemperature( C)
25
50
Temperature
75
100
125 150
Page 4
CEG9926
9
1.60
VDS=V
1.40
GS
ID=250ijA
1.20
1.00
0.80
Vth, Normalized
0.60
0.40
Gate-Source Threshold Voltage
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
30
25
20
15
10
5
gFS, Transconductance (S)
0
0 3 6 9 12 15
VDS=10V
1.15
1.10
ID=250ijA
1.05
1.00
0.95
0.90
BVDSS, Normalized
0.85
Drain-Source Breakdown Voltage
-50 -25 0
25
50
75
100 125
Tj, Junction Temperature ( C)
Figure 6. Breakdown Voltage Variation
with Temperature
20
10
1
Is, Source-drain current (A)
0.1
0.4
0.6
0.8
1.0
1.2
150
1.4
IDS, Drain-Source Current (A)
Figure 7. Transconductance Variation
with Drain Current
5
VDS=10V
4
I
D
=4.5A
3
2
1
VGS, Gate to Source Voltage (V)
0
02
46
Qg, Total Gate Charge (nC)
8
10 12 14 16
Figure 9. Gate Charge
9-20
VSD, Body Diode Forward Voltage (V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
2
10
1ms
10
m
1
s
0
0ms
1s
10
1
10
0
ID, Drain Current (A)
10
10
10
10
1
0
-1
-2
10
imit
L
N)
O
S(
D
R
TA=25 C
Tj=150 C
Single Pulse
-2
10
DC
-1
10
VDS, Drain-Source Voltage (V)
Figure 10. Maximum Safe
Operating Area
2
Page 5
CEG9926
4
DD
V
IN
V
R
D
V
GS
GEN
R
G
S
Figure 11. Switching Test Circuit
0
10
D=0.5
0.2
-1
10
0.1
0.05
0.02
0.01
-2
10
r(t),Normalized Effective
Transient Thermal Impedance
-3
10
Single Pulse
-4
10
-3
10
d(on)
L
OUT
V
t
OUT
V
IN
V
10%
Figure 12. Switching Waveforms
-2
10
Square Wave Pulse Duration (sec)
-1
10
on
t
d(off)
t
r
t
90%
INVERTED
10% 10%
50% 50%
PULSE WIDTH
DM
P
1
t
2
t
1. RįJA (t)=r (t) * RįJA
2. RįJA=See Datasheet
JM-TA =P*RįJA (t)
3. T
4. Duty Cycle, D=t1/t2
0
10
1
10
90%
t
off
f
t
90%
9
2
10
Figure 13. Normalized Thermal Transient Impedance Curve
9-21
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