Datasheet cee02n6a Datasheet

CEE02N6A

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

600V, 1.3A, R

Super high dense cell design for extremely low R

High power and current handing capability.

Lead-free plating ; RoHS compliant.

TO-126 package.

ABSOLUTE MAXIMUM RATINGS T

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

Drain Current-Pulsed

Maximum Power Dissipation @ TC = 25 C

Operating and Store Temperature Range TJ,T

= 8.5Ω @VGS = 10V.

DS(ON)

Parameter

a

- Derate above 25 C

.

DS(ON)

G

D

S

CEE SERIES TO-126

= 25 C unless otherwise noted

c

Symbol

V

DS

V

GS

I

D

I

DM

P

D

stg

D

G

S

Limit

600

±30

1.3

5.2

41

0.32

-55 to 150 C

Units

V

A

W

W/ C

Thermal Characteristics

Parameter Symbol Limit Units

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Details are subject to change without notice .

3.5RθJC

RθJA

1

62.5

Rev 1. 2012.Mar

http://www.cetsemi.com

C/W

CEE02N6A

Electrical Characteristics T

= 25 C unless otherwise noted

c

Parameter Symbol Min Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Body Leakage Current, Reverse

On Characteristics

b

Gate Threshold Voltage

Static Drain-Source

On-Resistance

Dynamic Characteristics

c

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics

c

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V

R

BV

C

t

d(on)

t

d(off)

Q

DSS

I

DSS

I

GSSF

IGSSR

GS(th)

DS(on)

iss

oss

rss

t

r

t

f

Q

g

gs

gd

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by des ign, not subject to production testing . d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area .

b

IS

VSD

Test Condition

VGS = 0V, ID = 250µA

VDS = 600V, VGS = 0V

VGS = 30V, VDS = 0V

VGS = -30V, VDS = 0V

VGS = VDS, ID = 250µA

VGS = 10V, ID = 0.2A

VDS = 25V, VGS = 0V, f = 1.0 MHz

VDD = 300V, ID = 1.3A, VGS = 10V, R

GEN

= 4.7Ω

VDS = 480V, ID = 1A, VGS = 10V

VGS = 0V, IS = 0.2A

Typ Max

600

2 4

206

46

19

10

9

17

7

9

2.5

4.6

1

100

-100

8.57.4

20

18

34

14

12

1.3

1.5

V

µA

nA

V

Ω

pF

ns

nC

A

V

2

CEE02N6A

1.4

1.2

1.0

0.8

0.6

0.4

ID, Drain Current (A)

0.2

0

0.0 3 6 129

VGS=10,8,7V

VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

300

250

200

150

100

C, Capacitance (pF)

50

0

0 5 10 15 20 25

VDS, Drain-to-Source Voltage (V)

2.4

2.0

V

GS

V

GS

V

GS

=6V

=5V

=4V

15 18

1.6

1.2

0.8

ID, Drain Current (A)

0.4

0

1 2 3 4

TJ=125 C

25 C

-55 C

5 6 7

VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

3.0 ID=0.2A

VGS=10V

2.5

C

iss

C

oss

C

rss

2.0

1.5

1.0

RDS(ON), Normalized

0.5

RDS(ON), On-Resistance(Ohms)

0.0

-100 -50 0 50 100 150 200

TJ, Junction Temperature( C)

Figure 3. Capacitance

1.3 VDS=V

GS

ID=250µA

1.2

1.1

1.0

0.9

0.8

VTH, Normalized

0.7

Gate-Source Threshold Voltage

0.6

-50 -25 0 25 50 75 100 125 150

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variation

with Temperature

Figure 4. On-Resistance Variation

with Temperature

V

=0

V

GS

0

10

-1

10

IS, Source-drain current (A)

-2

10

0.2 0.6 1.0 1.4

2.21.8

VSD, Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

3

CEE02N6A

10

VDS=480V ID=1.0A

8

6

4

2

VGS, Gate to Source Voltage (V)

0

0 1.5 3 4.5 9

Qg, Total Gate Charge (nC)

Figure 7. Gate Charge

V

IN

V

D

V

GS

GEN

R

G

S

6 7.5

DD

R

L

1

10

10ms

DC

10

2

100ms

1ms

3

10

R

Limit

DS(ON)

0

10

-1

10

ID, Drain Current (A)

-2

10

TC=25 C TJ=150 C

Single Pulse

0

10

1

10

VDS, Drain-Source Voltage (V)

Figure 8. Maximum Safe

Operating Area

on

t

d(off)

t

r

d(on)

t

OUT

V

OUT

V

IN

V

10%

t

90%

10% 10%

INVERTED

50% 50%

90%

t

off

f

t

90%

PULSE WIDTH

Figure 9. Switching Test Circuit

0

10

D=0.5

0.2

0.1

-1

10

0.05

0.02

r(t),Normalized Effective

Transient Thermal Impedance

0.01

Single Pulse

-2

10

-2

10

-1

10

Figure 11. Normalized Thermal Transient Impedance Curve

Figure 10. Switching Waveforms

0

10

1

10

Square Wave Pulse Duration (msec)

4

PDM

t1

t2

1. RθJC (t)=r (t) * RθJC

2. RθJC=See Datasheet

3. TJM-TC = P* RθJC (t)

4. Duty Cycle, D=t1/t2

2

10

3

10

4

10