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CEDM7001
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CEDM7001 is
an N-Channel Enhancement-mode Silicon MOSFET,
www.centralsemi.com
manufactured by the N-Channel DMOS Process,
designed for high speed pulsed amplifier and driver
applications. This MOSFET offers Low r
DS(ON)
Low Theshold Voltage.
MARKING CODE: H
FEATURES:
SOT-883L CASE
• 100mW Power Dissipation
• 0.4mm Low Package Profile
• Low r
APPLICATIONS:
• Load/Power Switches
• DC - DC Converters
• Battery Powered Portable Equipment
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS 10 V
Continuous Drain Current (Steady State) ID 100 mA
Peak Drain Current, tp=10μs IDM 200 mA
Power Dissipation PD 100 mW
Operating and Storage Junction Temperature TJ, T
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
I
, I
GSSF
I
BV
V
r
r
r
Q
Qgs V
Q
gFS V
C
C
C
t
t
GSSR VGS
V
DSS
VGS=0, ID=100μA 20 V
DSS
GS(th)
VGS=4.0V, ID=10mA 0.9 3.0 Ω
DS(ON)
VGS=2.5V, ID=10mA 1.3 4.0 Ω
DS(ON)
VGS=1.5V, ID=1.0mA 15 Ω
DS(ON)
V
g(tot)
V
gd
V
rss
V
iss
oss
on
off
=10V, VDS=0 1.0 μA
=20V, VGS=0 1.0 μA
DS
VDS=VGS, ID=250μA 0.6 0.9 V
=10V, VGS=4.5V, ID=100mA 0.566 nC
DS
=10V, VGS=4.5V, ID=100mA 0.16 nC
DS
=10V, VGS=4.5V, ID=100mA 0.08 nC
DS
=10V, ID=100mA 100 mS
DS
=3.0V, VGS=0, f=1.0MHz 4.0 pF
DS
=3.0V, VGS=0, f=1.0MHz 9.0 pF
DS
VDS=3.0V, VGS=0, f=1.0MHz 9.5 pF
VDD=3.0V, VGS=2.5V, ID=10mA 50 ns
VDD=3.0V, VGS=2.5V, ID=10mA 75 ns
DS(ON)
• Low Threshold Voltage
• Logic Level Compatible
• Small, TLP™ 1x0.6mm, SOT-883L Leadless
Surface Mount Package
-65 to +150 °C
stg
and
R8 (22-August 2011)
Page 2
CEDM7001
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
SOT-883L CASE - MECHANICAL OUTLINE
www.centralsemi.com
LEAD CODE:
1) Gate
2) Source
3) Drain
MARKING CODE: H
R8 (22-August 2011)
Page 3
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